天堂国产午夜亚洲专区-少妇人妻综合久久蜜臀-国产成人户外露出视频在线-国产91传媒一区二区三区

當(dāng)前位置:主頁(yè) > 醫(yī)學(xué)論文 > 口腔論文 >

810nm波長(zhǎng)半導(dǎo)體激光封閉牙本質(zhì)小管的體外研究

發(fā)布時(shí)間:2018-03-07 06:11

  本文選題:半導(dǎo)體激光 切入點(diǎn):牙本質(zhì)敏感癥 出處:《北京協(xié)和醫(yī)學(xué)院》2017年碩士論文 論文類型:學(xué)位論文


【摘要】:[目的]使用810nm波長(zhǎng)半導(dǎo)體激光照射牙本質(zhì)小塊,觀察牙本質(zhì)小管的封閉情況及激光照射牙本質(zhì)小塊后其對(duì)側(cè)溫度變化情況,獲得在本實(shí)驗(yàn)條件下既能最大程度地封閉牙本質(zhì)小管又不引起對(duì)側(cè)溫度升高過高的安全參數(shù),為臨床上安全、有效地使用半導(dǎo)體激光治療牙本質(zhì)敏感癥提供參考依據(jù)。[方法]將完整無(wú)齲壞、無(wú)裂紋磨牙制備成2mm厚牙本質(zhì)小塊,并均分為4等份,共21個(gè)牙本質(zhì)小塊。使用810nm波長(zhǎng)半導(dǎo)體激光在連續(xù)模式下以不同參數(shù)照射牙本質(zhì)小塊,組 1:對(duì)照組,OW,Os(OJ/cm~2);組 2:0.2W,2s(333.47J/cm~2);組 3:0.2W,5s(833.67J/cm~2);組 4:0.2W,10s(1667.34J/cm~2);組 5:0.3W,2s(502.85J/cm~2);組 6:0.3W,5s(1257.12J/cm~2);組 7:0.3W,10s(2514.25J/cm~2),在掃描電鏡下觀察牙本質(zhì)小管的封閉情況;并在同樣的實(shí)驗(yàn)環(huán)境下分別使用0.2W和0.3W以1s、2s、3s、4s、5s、10s照射同一牙本質(zhì)小塊,記錄激光穿透牙本質(zhì)小塊后溫度變化情況。[結(jié)果]①在本實(shí)驗(yàn)條件下,牙本質(zhì)小管的封閉程度隨照射時(shí)間的延長(zhǎng)而增強(qiáng),不同功率之間封閉效果無(wú)統(tǒng)計(jì)學(xué)差異。使用析因設(shè)計(jì)方差分析,時(shí)間因素P=0.002(0.05),差異有統(tǒng)計(jì)學(xué)意義;功率因素P=0.107(0.05),差異無(wú)統(tǒng)計(jì)學(xué)意義;照射時(shí)間與激光功率存在交互作用,P=0.048(0.05),差異有統(tǒng)計(jì)學(xué)意義。②當(dāng)激光功率一定時(shí),牙本質(zhì)對(duì)側(cè)溫度隨照射時(shí)間的延長(zhǎng)逐漸升高,差異有統(tǒng)計(jì)學(xué)意義(P0.05);當(dāng)照射時(shí)間一定時(shí),牙本質(zhì)對(duì)側(cè)溫度隨功率增加逐漸升高,差異有統(tǒng)計(jì)學(xué)意義(P0.05)。激光照射參數(shù)為0.2W,4s、5s、10s和0.3W,3s、4s、5s、10s時(shí)溫度升高△T3℃;當(dāng)激光照射參數(shù)為0.2W,2s(333.47J/cm~2)、0.2W,3s(500.20J/cm~2)、0.3W,2s(502.85J/cm~2)時(shí),△T3℃。[結(jié)論]當(dāng)激光光纖垂直距離牙本質(zhì)1mm以連續(xù)模式照射時(shí),810nm波長(zhǎng)半導(dǎo)體激光可以封閉牙本質(zhì)小管且不會(huì)引起牙髓溫度明顯升高,在臨床上可以用于牙本質(zhì)敏感癥的治療。在同一個(gè)位置定點(diǎn)照射牙本質(zhì)的適宜參數(shù)為0.2W(0.189W),照射時(shí)間為3s或0.3W(0.285W),照射時(shí)間為2s,激光能量密度的安全范圍是333.47J/cm~2~502.85J/cm~2。
[Abstract]:[objective] to observe the closure of dentin tubules and the change of the contralateral temperature of dentine tubules irradiated by 810nm semiconductor laser. The safety parameters, which can seal dentin tubules to the maximum extent and do not cause excessive increase in contralateral temperature, are obtained in this study. The effective use of semiconductor laser in the treatment of dentin hypersensitivity provides a reference basis. [methods] the intact and crack free molars were prepared into 2 mm thick dentin fragments and were divided into 4 equal parts. A total of 21 dentin fragments were irradiated with 810nm semiconductor laser in continuous mode with different parameters. Group 1: control group OWO / OJ / cm ~ (2); control group: 2: 0.2W / 2s ~ (333.47) J / cm ~ (2); group 3: 0.2W ~ 5s ~ (5s) ~ (833.67) J / cm ~ (2) ~ (2); group 4: 0.2W ~ (10) W ~ (10) / s ~ (1667.34) J / cm ~ (2); group 50.3W / s ~ (502.85 J / cm ~ (2)); group 60.3W ~ (5s) ~ (1257.12) J / cm ~ (2); group 70.3 W ~ (10) s ~ (2514.25) J / cm ~ (2) ~ (-1) to observe the closure of dentinal ductus under scanning electron microscope; and 0.2W and 0.1W ~ (3s) s ~ (3s) s ~ (3s) s ~ 5s ~ 10s ~ 10s irradiation to the same experimental environment, respectively, in the same experimental environment. [results] 1 under this experimental condition, the sealing degree of dentine tubules was increased with the prolongation of irradiation time. There was no statistical difference in sealing effect between different power levels. Using factorial design variance analysis, the time factor P0. 002 + 0. 05% was statistically significant, while the power factor was 0. 107% 0. 05%, the difference was not statistically significant. There was interaction between irradiation time and laser power. The difference was statistically significant. 2 when the laser power was constant, the temperature of the opposite side of dentin gradually increased with the prolongation of irradiation time, and the difference was statistically significant when the irradiation time was constant. The temperature of the contralateral dentin increased gradually with the increase of power, and the difference was statistically significant (P 0.05). When the laser irradiation parameters were 0.2W ~ 4s ~ 4s ~ 5s ~ 10s and 0.3W ~ 3s ~ 3s ~ 4s ~ 5s ~ 10 s, the temperature increased by T3 鈩,

本文編號(hào):1578255

資料下載
論文發(fā)表

本文鏈接:http://sikaile.net/yixuelunwen/kouq/1578255.html


Copyright(c)文論論文網(wǎng)All Rights Reserved | 網(wǎng)站地圖 |

版權(quán)申明:資料由用戶4813c***提供,本站僅收錄摘要或目錄,作者需要?jiǎng)h除請(qǐng)E-mail郵箱bigeng88@qq.com