某集成電路企業(yè)刻蝕工位有害物質(zhì)逸散數(shù)值模擬研究
發(fā)布時間：2018-11-01 11:54
【摘要】：近年來,隨著電子信息產(chǎn)業(yè)的興起,互聯(lián)網(wǎng)時代進程的加深,手機、平板電腦等電子設(shè)備和互聯(lián)網(wǎng)通訊設(shè)備的需求量日益增加,集成電路的應(yīng)用也越來越廣泛。集成電路產(chǎn)業(yè)生產(chǎn)工藝復(fù)雜、工序多,有害因素數(shù)量多、接觸廣、毒性大,整個生產(chǎn)過程涉及的氣態(tài)、液態(tài)、粉塵、非電離輻射和電離輻射各種形態(tài)的危害。所以集成電路制造企業(yè)存在的有害因素不容小覷,研究其職業(yè)危害情況是非常有意義的。本文選取某一實際集成電路制造企業(yè)的刻蝕工位為例,以有害物質(zhì)HF氣體的擴散規(guī)律為研究對象,應(yīng)用數(shù)值模擬的方法分析了HF氣體擴散的影響因素。首先,對刻蝕工位所在潔凈空間進行簡化,應(yīng)用Gambit軟件建立抽象幾何模型并進行網(wǎng)格劃分。然后將幾何模型導(dǎo)入流體力學(xué)計算軟件Fluent,通過設(shè)置不同參數(shù),模擬在不同工況下刻蝕工位的有害物質(zhì)HF氣體的擴散情況,最后根據(jù)不同的擴散情況分析相應(yīng)的職業(yè)危害情況。研究表明,正常工況下,該集成電路制造企業(yè)刻蝕工位HF氣體在一定時間內(nèi)揮發(fā)擴散,范圍約占計算空間的50%。另外,送風(fēng)口數(shù)量、排風(fēng)口數(shù)量、排風(fēng)口位置、排風(fēng)口面積是影響潔凈室內(nèi)有害物質(zhì)HF氣體擴散情況的關(guān)鍵因素。首先,相比兩個送風(fēng)口,一個送風(fēng)口的潔凈空間HF氣體的運動路徑更復(fù)雜,擴散范圍更大,約占計算空間的75%;第二,當(dāng)取消反應(yīng)腔內(nèi)部排風(fēng)口設(shè)置后(可視為內(nèi)置排風(fēng)口故障),HF氣體的擴散情況是幾次模擬中效果最差的,運動路徑非常復(fù)雜,擴散范圍幾乎占據(jù)了整個計算空間(100%);第三,相比排風(fēng)口設(shè)置在后壁,將排風(fēng)口設(shè)置到頂面后,HF氣體運動路徑較簡單,擴散范圍較小,約占計算空間的25%;第四,將排風(fēng)口的面積增大兩倍后,HF氣體的擴散情況是幾次模擬中效果最好的,運動路徑非常規(guī)律,擴散范圍不到計算空間的10%,是正常工況擴散范圍的五分之一。由此提出,將排風(fēng)口設(shè)置在氧化膜腐蝕機反應(yīng)腔頂面并相應(yīng)增大面積,可以更好地保證通風(fēng)換氣效果。另外,本文還針對該例中實際工作情況提出了相關(guān)的職業(yè)衛(wèi)生建議。
[Abstract]:In recent years, with the rise of electronic information industry and the deepening of the Internet era, the demand for electronic devices such as mobile phones, tablets and Internet communication equipment is increasing day by day, and the application of integrated circuits is becoming more and more extensive. The production process of integrated circuit industry is complex, the working procedure is many, the number of harmful factors is many, the contact is wide, the toxicity is big, the whole production process involves various kinds of harm of gas state, liquid state, dust, non-ionizing radiation and ionizing radiation. Therefore, the harmful factors of IC manufacturing enterprises should not be underestimated, it is very meaningful to study the occupational hazards. In this paper, the etching station of a practical IC manufacturing enterprise is selected as an example, the diffusion law of harmful HF gas is taken as the research object, and the influence factors of HF gas diffusion are analyzed by numerical simulation method. Firstly, the clean space of the etching station is simplified, and the abstract geometric model is established by using Gambit software and the mesh is divided. Then the geometric model was introduced into the hydrodynamic calculation software Fluent, to simulate the diffusion of HF gas which etched in different working conditions by setting different parameters. Finally the occupational hazards were analyzed according to the different diffusion conditions. The results show that under normal working conditions, the etching station HF gas in the integrated circuit manufacturing enterprise is volatilized and diffused in a certain time, and the range is about 50% of the calculation space. In addition, the quantity of air outlet, the location of outlet and the area of outlet are the key factors to influence the diffusion of HF gas in clean room. Firstly, compared with two air outlets, the movement path of HF gas in clean space of one outlet is more complex, and the diffusion range is larger, accounting for about 75% of the computational space. Second, when the exhaust outlet in the reaction chamber is cancelled (which can be regarded as the internal exhaust outlet fault), the diffusion of), HF gas is the worst in several simulations, and the movement path is very complex. The diffusion range occupies almost the entire computational space (100%); Third, compared with the exhaust port in the rear wall, the HF gas movement path is simple and the diffusion range is smaller, accounting for about 25% of the calculation space after the exhaust air outlet is set to the top surface. Fourth, the diffusion of HF gas is the best in several simulations when the area of the outlet is increased by twice. The movement path is very regular, the diffusion range is less than 10 times of the calculated space, which is 1/5 of the normal working condition diffusion range. It is suggested that the ventilation effect can be better ensured by setting the exhaust air outlet on the top surface of the reaction chamber of the oxide film corrosion machine and increasing the area accordingly. In addition, this article also puts forward the related occupational health suggestions for the actual work situation in this example.
【學(xué)位授予單位】：首都經(jīng)濟貿(mào)易大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：R134
本文編號：2303853
[Abstract]:In recent years, with the rise of electronic information industry and the deepening of the Internet era, the demand for electronic devices such as mobile phones, tablets and Internet communication equipment is increasing day by day, and the application of integrated circuits is becoming more and more extensive. The production process of integrated circuit industry is complex, the working procedure is many, the number of harmful factors is many, the contact is wide, the toxicity is big, the whole production process involves various kinds of harm of gas state, liquid state, dust, non-ionizing radiation and ionizing radiation. Therefore, the harmful factors of IC manufacturing enterprises should not be underestimated, it is very meaningful to study the occupational hazards. In this paper, the etching station of a practical IC manufacturing enterprise is selected as an example, the diffusion law of harmful HF gas is taken as the research object, and the influence factors of HF gas diffusion are analyzed by numerical simulation method. Firstly, the clean space of the etching station is simplified, and the abstract geometric model is established by using Gambit software and the mesh is divided. Then the geometric model was introduced into the hydrodynamic calculation software Fluent, to simulate the diffusion of HF gas which etched in different working conditions by setting different parameters. Finally the occupational hazards were analyzed according to the different diffusion conditions. The results show that under normal working conditions, the etching station HF gas in the integrated circuit manufacturing enterprise is volatilized and diffused in a certain time, and the range is about 50% of the calculation space. In addition, the quantity of air outlet, the location of outlet and the area of outlet are the key factors to influence the diffusion of HF gas in clean room. Firstly, compared with two air outlets, the movement path of HF gas in clean space of one outlet is more complex, and the diffusion range is larger, accounting for about 75% of the computational space. Second, when the exhaust outlet in the reaction chamber is cancelled (which can be regarded as the internal exhaust outlet fault), the diffusion of), HF gas is the worst in several simulations, and the movement path is very complex. The diffusion range occupies almost the entire computational space (100%); Third, compared with the exhaust port in the rear wall, the HF gas movement path is simple and the diffusion range is smaller, accounting for about 25% of the calculation space after the exhaust air outlet is set to the top surface. Fourth, the diffusion of HF gas is the best in several simulations when the area of the outlet is increased by twice. The movement path is very regular, the diffusion range is less than 10 times of the calculated space, which is 1/5 of the normal working condition diffusion range. It is suggested that the ventilation effect can be better ensured by setting the exhaust air outlet on the top surface of the reaction chamber of the oxide film corrosion machine and increasing the area accordingly. In addition, this article also puts forward the related occupational health suggestions for the actual work situation in this example.
【學(xué)位授予單位】：首都經(jīng)濟貿(mào)易大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：R134
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