本文選題：半導(dǎo)體激光　切入點(diǎn)：熔融　出處：《實(shí)用口腔醫(yī)學(xué)雜志》2017年03期

【摘要】：目的:探討常規(guī)根管預(yù)備后使用半導(dǎo)體激光進(jìn)行根管內(nèi)照射對(duì)根尖封閉性能的影響。方法:選擇新鮮拔除的單根管牙60顆,分6組(n=10),去除牙冠,常規(guī)根管預(yù)備。A、B組,半導(dǎo)體激光1 W照射20 s;C、D組,超聲蕩洗1 min;E、F組,不做任何處理,作為對(duì)照組。常規(guī)熱牙膠垂直加壓法充填6組牙根。微滲漏實(shí)驗(yàn)對(duì)根充后的A、C、E組牙的根尖封閉性能進(jìn)行評(píng)估,掃描電鏡觀察B、D、F組牙根剖面。結(jié)果:A、C、E組根管微滲漏(mm)分別為1.70±0.82、2.02±0.40和4.56±2.76(A vs E,P0.01;C vs E,P0.05,A vs C,P0.05),掃描電鏡觀察到激光組大部分牙本質(zhì)小管發(fā)生熔融、縮小或封閉,超聲蕩洗組大部分牙本質(zhì)小管內(nèi)有糊劑或牙膠進(jìn)入。結(jié)論:半導(dǎo)體激光進(jìn)行根管內(nèi)照射可以顯著提高根充后根尖的封閉性能。
[Abstract]:Objective: to investigate the effect of semiconductor laser irradiation on the sealing of root tip after routine root canal preparation. Methods: 60 teeth with fresh root canal were selected and divided into 6 groups (n = 10) to remove crown, and group A (n = 10) for routine root canal preparation. Group D was irradiated with semiconductor laser for 1 W, Group F was washed by ultrasound for 1 min, without any treatment. The root of 6 groups were filled with normal hot gum vertical pressure. The apical sealing performance of Agna CnE group after root filling was evaluated by microleakage test. Results the root canal microleakage was 1.70 鹵0.82U 2.02 鹵0.40 and 4.56 鹵2.76A vs EPO P0.01C vs EP 0.05A vs CP 0.05A in the group of W An Con E, respectively. Scanning electron microscope showed that most of the dentinal tubules in the laser group were fused, narrowed or closed, and the results showed that most of the dentinal tubules in the laser group were fused, narrowed down or closed off by scanning electron microscope, and the results showed that most of the dentinal tubules in the laser group were fused, reduced or closed off by scanning electron microscope. Conclusion: semiconductor laser irradiation in root canal can significantly improve the sealing performance of root tip after root filling.
【作者單位】： 青島大學(xué)附屬醫(yī)院口腔科;青島大學(xué)附屬醫(yī)院中心實(shí)驗(yàn)室;
【分類號(hào)】：R781.05

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