不同工藝制備的人工節(jié)瘤的損傷生長特性
發(fā)布時間：2018-09-19 16:18
【摘要】：在高能激光系統(tǒng)中,反射膜的損傷生長特性和初始損傷一樣重要。對薄膜損傷生長特性的研究將有助于探究反射膜損傷機(jī)制,從而進(jìn)一步有效地提高其抗激光損傷能力。使用電子束蒸發(fā)(EB)和離子束輔助(IAD)兩種工藝制備了1064nm波長下的Hf O2/Si O2反射膜,利用四種尺寸的單分散的Si O2小球形成人工節(jié)瘤,來研究薄膜鍍制工藝和節(jié)瘤尺寸對節(jié)瘤損傷生長特性的影響。激光損傷測試結(jié)果表明:節(jié)瘤損傷生長閾值基本隨節(jié)瘤尺寸的增加而減小。EB工藝制備的反射膜中,四種尺寸節(jié)瘤的損傷生長閾值都高于其初始損傷閾值,而IAD工藝制備的反射膜中結(jié)果則相反。另外,IAD工藝要比EB工藝制備的反射膜中的節(jié)瘤在發(fā)生初始損傷后更易于損傷生長,說明薄膜鍍制工藝對節(jié)瘤的損傷生長速度有一定的影響。
[Abstract]:In high energy laser systems, the damage growth characteristics of the reflective film are as important as the initial damage. The study of the damage and growth characteristics of the thin film will be helpful to explore the mechanism of the damage of the reflective film and improve its ability to resist laser damage effectively. Electron beam evaporation (EB) and ion beam assisted (IAD) were used to prepare Hf O2/Si O 2 reflective film at 1064nm wavelength. Four sizes of monodisperse Si O 2 spheres were used to form artificial ganglion. To study the effect of film plating process and nodule size on the growth characteristics of ganglion damage. The results of laser damage test show that the damage growth threshold of ganglion decreases with the increase of the size of the tumor. In the reflective film prepared by EB process, the damage growth threshold of the four kinds of ganglion is higher than its initial damage threshold. However, the results of the reflective films prepared by IAD process are opposite. In addition, iad process is more likely to damage and grow after initial damage than that of EB process, which indicates that the film plating process has a certain effect on the growth rate of ganglion damage.
【作者單位】： 同濟(jì)大學(xué)先進(jìn)微結(jié)構(gòu)材料教育部重點(diǎn)實驗室;同濟(jì)大學(xué)物理科學(xué)與工程學(xué)院精密光學(xué)工程技術(shù)研究所;中國工程物理研究院激光聚變研究中心;
【基金】：國家自然科學(xué)基金(61522506,61235011,51475335)
【分類號】：TN249
[Abstract]:In high energy laser systems, the damage growth characteristics of the reflective film are as important as the initial damage. The study of the damage and growth characteristics of the thin film will be helpful to explore the mechanism of the damage of the reflective film and improve its ability to resist laser damage effectively. Electron beam evaporation (EB) and ion beam assisted (IAD) were used to prepare Hf O2/Si O 2 reflective film at 1064nm wavelength. Four sizes of monodisperse Si O 2 spheres were used to form artificial ganglion. To study the effect of film plating process and nodule size on the growth characteristics of ganglion damage. The results of laser damage test show that the damage growth threshold of ganglion decreases with the increase of the size of the tumor. In the reflective film prepared by EB process, the damage growth threshold of the four kinds of ganglion is higher than its initial damage threshold. However, the results of the reflective films prepared by IAD process are opposite. In addition, iad process is more likely to damage and grow after initial damage than that of EB process, which indicates that the film plating process has a certain effect on the growth rate of ganglion damage.
【作者單位】： 同濟(jì)大學(xué)先進(jìn)微結(jié)構(gòu)材料教育部重點(diǎn)實驗室;同濟(jì)大學(xué)物理科學(xué)與工程學(xué)院精密光學(xué)工程技術(shù)研究所;中國工程物理研究院激光聚變研究中心;
【基金】：國家自然科學(xué)基金(61522506,61235011,51475335)
【分類號】：TN249
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