低能離子注入介導(dǎo)的沙漠寡營(yíng)養(yǎng)細(xì)菌rRNA基因突變研究
[Abstract]:Low energy ion implantation is a physical mutagenic breeding technique developed in recent years. Thus triggering biological effects. In order to understand the mutation of rRNA gene induced by oligonutrient desert bacteria (DOB) mediated by low energy N injection, On the basis of DOB genomic De novo sequencing, the rRNA gene sequences of three ion-beam recombinant DOB strains DOB073,DOB113,DOB981 and the original DOB150 were analyzed by bioinformatics, and their rRNA gene mutations were studied. The gene sequence of 5srRNA-16s rRNA,23srRNA of these DOB strains was obtained from DOB genomic De novo sequencing data, the basic rules of gene mutation were studied, the specific sites of gene mutation were analyzed, and the copy number and GC content were counted. Calculate the evolutionary distance and molecular clock, and then build the evolutionary tree, and analyze the degree of evolution of the gene. The copy number analysis of rRNA gene showed that the copy number of 5srRNA gene and 16s rRNA gene of recombinant mutant DOB073 were 14 and 5 more than that of the original strain DOB150, respectively. The copy number of 16s rRNA gene of recombinant mutant DOB113 was 5 more than that of original strain DOB150, the copy number of 5srRNA gene of recombinant mutant DOB981 was 1 less than that of original strain DOB150, and the copy number of 16s rRNA gene increased by 5. The copy number of 23s rRNA gene of three recombinant mutant strains was the same as that of control strain DOB150. The results of the study on the base mutation site of rRNA gene showed that the 5srRNA gene of the three recombinant mutants had a base mutation at 4107112114. DOB073 and DOB113 also had base mutation at 104th. The 5-6 base mutations of 16srRNA gene of the three recombinant mutant strains were located in C1 region, V1 region, V2 region, V4 region, V6 region, V7 and V9 region, respectively. The 23srRNA gene of the three recombinant mutants was highly conserved, and only 2-3 base loci were mutated. The results of gene evolution analysis showed that the 5srRNA gene and 23srRNA gene of the recombinant mutant DOB073 and DOB113 were both faster than that of the recombinant mutant DOB981.. The results showed that the 16srRNA gene of the three recombinant mutant strains and the 16srRNA gene of the original strain had 9 conserved secondary structures, while the evolution rate of the 16srRNA gene of DOB981 was faster than that of the conserved secondary structure of the DOB073 and DOB113.rRNA gene sequences. Their base positions are 80-120120-240240-360360-480400-520640-760760-880800-920 and 1420-1540 respectively. The 23srRNA gene of the three recombinant mutants and the 23srRNA gene of the original strain all had 13 conserved secondary structures, and their base positions were as follows: 40-160 (80-200120-240720-84040) 1200-1320 (1480-1600) 1520-164040 (2120-2240) 2200-2320 (2240-23602280-2400) 2360-2480 (2520-2640). Through the study of three rRNA genes of three recombinant mutant DOB strains, the molecular mechanism of rRNA gene mutation and evolution mediated by ion implantation was revealed at the molecular level. It also provides a theoretical and practical basis for the diversity of DOB mediated by ion implantation, especially provides direct molecular evidence for the evolution of prokaryotic microorganisms mediated by low energy ion implantation.
【學(xué)位授予單位】:新疆大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2017
【分類(lèi)號(hào)】:Q78
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