甲烷濃度和晶向偏離角對(duì)金剛石單晶生長(zhǎng)影響的研究
發(fā)布時(shí)間：2019-01-28 18:15
【摘要】：金剛石具有硬度大、熱導(dǎo)率高、熱膨脹系數(shù)小等優(yōu)異特性。在國(guó)防鞏固、工業(yè)生產(chǎn)、科學(xué)技術(shù)等多個(gè)領(lǐng)域中都有廣泛的應(yīng)用。一直以來(lái)，制備高品質(zhì)的金剛石是科研人員所關(guān)注的焦點(diǎn)問(wèn)題，近些年金剛石單晶的研究更是備受矚目，高速率生長(zhǎng)高品質(zhì)的金剛石單晶成為了人們共同追求的目標(biāo)。 本論文采用MPCVD方法，選取3×3mm2的HTHP（100）單晶金剛石為籽晶，進(jìn)行單晶制備。發(fā)現(xiàn)氧氣對(duì)金剛石單晶生長(zhǎng)有明顯的影響，對(duì)樣品進(jìn)行Raman、PL光譜測(cè)試，結(jié)果表明氧氣可以抑制非金剛石相的生成，提高單晶金剛石的結(jié)晶質(zhì)量，，同時(shí)降低了單晶的生長(zhǎng)速率。在生長(zhǎng)過(guò)程中，固定其它生長(zhǎng)條件不變，探究甲烷濃度對(duì)金剛石單晶生長(zhǎng)的影響，隨著甲烷濃度的增加，等離子體中分解出的含碳基團(tuán)增加，生長(zhǎng)速率增大。PL測(cè)試結(jié)果表明通入不同流量的甲烷會(huì)影響CVD金剛石中氮的濃度。隨著甲烷濃度的增加，外延層厚度的增厚，晶體內(nèi)N原子逐漸積累，氮含量呈增加的趨勢(shì)。但當(dāng)甲烷濃度為10%時(shí)，含碳基團(tuán)增多，單晶生長(zhǎng)速率加快，氮的擴(kuò)散速度相對(duì)降低，外延層中氮含量下降。由SEM和金相顯微表面觀察可知，隨甲烷濃度的增大臺(tái)階密度增加。但甲烷濃度增加至10%時(shí)，N含量降低，晶體內(nèi)雜質(zhì)減少，結(jié)晶質(zhì)量有所提升，臺(tái)階密度減少。 晶向偏離角對(duì)高速率高品質(zhì)金剛石單晶的生長(zhǎng)有一定的影響。在生長(zhǎng)前，將籽晶表面分別拋光成與籽晶[100]方向成0°、1.72°、2.63°、3.95°偏離角。實(shí)驗(yàn)發(fā)現(xiàn)，偏離角為3.95°的樣品生長(zhǎng)速率最快，結(jié)晶質(zhì)量最好，說(shuō)明偏離角的引入提高了單晶的外延生長(zhǎng)速率。加入0.5sccm氮?dú)夂�，發(fā)現(xiàn)偏離角為0°時(shí)，生長(zhǎng)速率有所提高，但偏離角為3.89°時(shí)，生長(zhǎng)速率無(wú)明顯提高。
[Abstract]:Diamond has excellent properties such as high hardness, high thermal conductivity and low coefficient of thermal expansion. In national defense consolidation, industrial production, science and technology and other fields have a wide range of applications. The preparation of high quality diamond has always been the focus of attention of researchers. In recent years, the research of diamond single crystal has attracted much attention, and high rate growth of high quality diamond single crystal has become the common goal of people. In this paper, MPCVD method is used to prepare 3 脳 3mm2 HTHP (100) single crystal diamond as seed crystal. It is found that oxygen has an obvious effect on the growth of diamond single crystal. The Raman,PL spectra of the sample show that oxygen can inhibit the formation of non-diamond phase, improve the crystal quality of single crystal diamond, and decrease the growth rate of single crystal at the same time. The effect of methane concentration on the growth of diamond single crystal was investigated by immobilization of other growth conditions. With the increase of methane concentration, the carbon-containing groups decomposed in plasma increased. The PL results showed that the concentration of nitrogen in CVD diamond was affected by methane flux. With the increase of methane concentration, the thickness of the epitaxial layer increases, the N atom in the crystal gradually accumulates and the nitrogen content increases. However, when the methane concentration is 10, the carbon groups increase, the growth rate of single crystal increases, the diffusion rate of nitrogen decreases, and the nitrogen content in the epitaxial layer decreases. The results of SEM and metallographic observation show that the step density increases with the increase of methane concentration. However, when the concentration of methane increases to 10, the N content decreases, the impurity in the crystal decreases, the crystallization quality improves and the step density decreases. The deviation angle of crystal direction has certain influence on the growth of high speed and high quality diamond single crystal. Before growth, the seed surface was polished into a deviation angle of 0 擄, 1.72 擄, 2.63 擄and 3.95 擄with the direction of seed crystal [100]. It is found that the sample with a deviation angle of 3.95 擄has the fastest growth rate and the best crystallization quality, which indicates that the introduction of deviation angle increases the epitaxial growth rate of single crystal. When 0.5sccm nitrogen was added, it was found that the growth rate increased when the deviation angle was 0 擄, but the growth rate did not increase significantly when the deviation angle was 3.89 擄.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ163;O78
本文編號(hào)：2417169
[Abstract]:Diamond has excellent properties such as high hardness, high thermal conductivity and low coefficient of thermal expansion. In national defense consolidation, industrial production, science and technology and other fields have a wide range of applications. The preparation of high quality diamond has always been the focus of attention of researchers. In recent years, the research of diamond single crystal has attracted much attention, and high rate growth of high quality diamond single crystal has become the common goal of people. In this paper, MPCVD method is used to prepare 3 脳 3mm2 HTHP (100) single crystal diamond as seed crystal. It is found that oxygen has an obvious effect on the growth of diamond single crystal. The Raman,PL spectra of the sample show that oxygen can inhibit the formation of non-diamond phase, improve the crystal quality of single crystal diamond, and decrease the growth rate of single crystal at the same time. The effect of methane concentration on the growth of diamond single crystal was investigated by immobilization of other growth conditions. With the increase of methane concentration, the carbon-containing groups decomposed in plasma increased. The PL results showed that the concentration of nitrogen in CVD diamond was affected by methane flux. With the increase of methane concentration, the thickness of the epitaxial layer increases, the N atom in the crystal gradually accumulates and the nitrogen content increases. However, when the methane concentration is 10, the carbon groups increase, the growth rate of single crystal increases, the diffusion rate of nitrogen decreases, and the nitrogen content in the epitaxial layer decreases. The results of SEM and metallographic observation show that the step density increases with the increase of methane concentration. However, when the concentration of methane increases to 10, the N content decreases, the impurity in the crystal decreases, the crystallization quality improves and the step density decreases. The deviation angle of crystal direction has certain influence on the growth of high speed and high quality diamond single crystal. Before growth, the seed surface was polished into a deviation angle of 0 擄, 1.72 擄, 2.63 擄and 3.95 擄with the direction of seed crystal [100]. It is found that the sample with a deviation angle of 3.95 擄has the fastest growth rate and the best crystallization quality, which indicates that the introduction of deviation angle increases the epitaxial growth rate of single crystal. When 0.5sccm nitrogen was added, it was found that the growth rate increased when the deviation angle was 0 擄, but the growth rate did not increase significantly when the deviation angle was 3.89 擄.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ163;O78
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