本文選題：硅熔體 + 硼�。� 參考：《昆明理工大學》2015年碩士論文

【摘要】：太陽能以分布廣泛、儲量無窮、清潔可再生等優(yōu)點備受世人關注。隨著光伏產(chǎn)業(yè)的快速發(fā)展和太陽能電池使用的普及,作為太陽能電池基本材料的太陽能級多晶硅,占據(jù)了越來越多的市場需求。目前,價格昂貴的半導體級多晶硅廣泛的用于太陽能光伏電池的制造是相當有限的。冶金法憑借成本低、投資少、建設周期短、相對污染小,被認為是提純制備太陽能級多晶硅最經(jīng)濟和最直接的方法,但該新工藝的關鍵和難點是冶金級硅中雜質(zhì)元素硼(B)的有效去除。因此,深入的研究硅熔體中雜質(zhì)組元尤其是B的熱力學性質(zhì),獲得相關熱力學數(shù)據(jù)對冶金法提純過程的深入研究具有重要的研究價值。本文采用分子相互作用體積模型(MIVM),在1693-1873K的溫度范圍內(nèi),對二元硅基熔體中溶質(zhì)組元的熱力學性質(zhì)進行模型計算研究,分別獲得Si-Fe、Si-A1、Si-P和Si-B二元硅基熔體中Fe (500-3000ppmw)、A1 (500-3000ppmw)、P (1-100ppmw)和B (1-100ppmw)各組元的自身交互作用系數(shù)與溫度的關系式以及各組元的活度和活度系數(shù)熱力學數(shù)據(jù),并與文獻中報道的相關數(shù)據(jù)結果進行了對比,其結果較理想。充分說明采用該種方法獲得各組元的自身交互作用系數(shù)結果的可靠性,也進一步驗證了MIVM模型的有效性,為研究多元硅基熔體的熱力學性質(zhì)奠定基礎。采用MIVM模型,在1693-1873K的溫度范圍內(nèi),對三元和四元硅基熔體中溶質(zhì)組元的熱力學性質(zhì)進行模型計算研究,分別獲得Si-Fe-B、Si-A1-B和Si-Fe-Al三元硅基熔體中B (10ppmw)、Fe (500-2500ppmw)和A1 (500-2500ppmw)各組元的活度以及Fe和Al對B的相互作用系數(shù)等熱力學數(shù)據(jù)：以及在1873K溫度下,Si-Fe-A1-B四元硅基熔體中A1 (500-1500ppmw）、Fe (500-2500ppmw)和B (10-50ppmw)的濃度范圍內(nèi)各組元的活度數(shù)據(jù)。此外,本文采用同一濃度(化學平衡法)和同一活度(溶解度法)的實驗方法分別對Si-Fe-B和Si-A1-B三元硅基熔體熱力學性質(zhì)進行實驗測定,獲得樣品在平衡狀態(tài)下的溶解平衡組成,通過熱力學推導和計算分別得到了1723K的溫度條件下,Si-Fe-B和Si-A1-B三元硅基熔體中Fe對B的相互作用系數(shù)εBFe=86.4547和A1對B的相互作用系數(shù)εBAl=4.5906的結果。
[Abstract]:Solar energy is widely distributed, reserves infinite, clean and renewable and so on. With the rapid development of photovoltaic industry and the popularity of solar cell use, solar grade polysilicon, as the basic material of solar cells, has occupied more and more market demand. At present, the expensive semiconductor-grade polysilicon is widely used in the manufacture of solar photovoltaic cells. Metallurgical process is considered to be the most economical and direct method for purification and preparation of solar grade polysilicon because of its low cost, low investment, short construction period and relatively small pollution. However, the key and difficulty of the new process is the effective removal of boron B in metallurgical grade silicon. Therefore, it is of great value to study the thermodynamic properties of impurity components in silicon melt, especially the thermodynamic properties of B, and to obtain the relevant thermodynamic data for the further study of metallurgical purification process. In this paper, the thermodynamic properties of solute components in binary silicon-based melts are studied by using the molecular interaction volume model (MIVMN) in the temperature range of 1693-1873K. The autointeraction coefficients of Si-FeSi-A1Si-P and Si-B binary Si-based melts were obtained, and the thermodynamic data of their activity and activity coefficients were obtained, respectively, for each component of Si-FeSi-A1Si-P and Si-B binary silicon-based melts, and the autointeraction coefficients of each component were obtained, respectively, and the relationship between the autointeraction coefficients and temperature, and the thermodynamic data of the activity and activity coefficients of each component were obtained, respectively, for the components of Si-Feo Si-A1Si-P and Si-B binary silicon-based melts. The results are compared with the related data reported in the literature, and the results are satisfactory. The reliability of using this method to obtain the self-interaction coefficients of each component is fully explained, and the validity of MIVM model is further verified, which lays a foundation for studying the thermodynamic properties of multicomponent silicon-based melts. The thermodynamic properties of solute components in ternary and quaternary silicon-based melts were studied by MIVM model in the temperature range of 1693-1873K. The thermodynamic data of activity and interaction coefficient of Fe and Al in Si-Fe-B Si-A1-B and Si-Fe-Al ternary Si-based melts were obtained, respectively, and the concentration of Al _ 2O _ (500-1500) and B _ (10-50ppmw) in Si-Fe-A _ 1-B quaternary silicon-based melts at 1873K were obtained. The concentrations of Al _ 2O _ (500-1500) and B _ (10-50) mww) in Si-Fe-A _ 1-B quaternary silicon-based melts were obtained at 1873K, respectively, and the concentrations of Fe _ (500-2500ppmww) and B _ (10-50ppmww) in Si-Fe-A _ 1-B quaternary silicon-based melts at 1873K were obtained. Activity data of each group in the range of degrees. In addition, the thermodynamic properties of Si-Fe-B and Si-A1-B ternary silicon-based melts were determined by the same concentration (chemical equilibrium method) and the same activity (solubility method), respectively, and the equilibrium compositions of the samples in equilibrium state were obtained. By thermodynamic derivation and calculation, the results of Fe to B interaction coefficient 蔚 BFe=86.4547 and A1 to B interaction coefficient 蔚 BAl=4.5906 in Si-Fe-B and Si-A1-B ternary silicon-based melts at 1723K were obtained, respectively.
【學位授予單位】：昆明理工大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TQ127.2;TM914.4

【參考文獻】

相關期刊論文 前6條

1 梁駿吾;電子級多晶硅的生產(chǎn)工藝[J];中國工程科學;2000年12期

2 李永青;;硅烷法制備多晶硅工藝的探討[J];河南化工;2010年19期

3 陳其國;高建;;流化床法制備粒狀多晶硅研究進展[J];氯堿工業(yè);2014年01期

4 ;Impurities evaporation from metallurgical-grade silicon in electron beam melting process[J];Rare Metals;2011年03期

5 陶東平;無限稀金屬溶液的活度系數(shù)與溫度的關系及其應用[J];有色金屬;1993年03期

6 湯傳斌;粒狀多晶硅生產(chǎn)概況[J];有色冶煉;2001年03期

相關博士學位論文 前1條

1 麥毅;冶金法制備太陽能級硅工藝中濕法提純及半工業(yè)化研究[D];昆明理工大學;2014年

相關碩士學位論文 前1條

1 周中華;應用分子相互作用體積模型和HA模型預測液態(tài)合金體系的混合焓[D];昆明理工大學;2006年

，

本文編號：1888779