本文選題：等離子體刻蝕 + 拋光��； 參考：《武漢工程大學(xué)》2015年碩士論文

【摘要】：CVD金剛石以其卓越優(yōu)異的性能成為未來(lái)引人注目的工程材料。它已在硬質(zhì)刀具、光學(xué)、熱學(xué)、聲學(xué)、微電子等方面得到廣泛應(yīng)用。但這些領(lǐng)域的應(yīng)用均要求CVD金剛石表面具有一定平整度。現(xiàn)今,由于CVD金剛石柱狀生長(zhǎng)特性導(dǎo)致金剛石片厚度不均、晶粒大小不一和取向各異,產(chǎn)生了一個(gè)較為粗糙的表面,限制了其應(yīng)用范圍。因此,根據(jù)不同工業(yè)應(yīng)用要求,CVD金剛石表面拋光技術(shù)成為金剛石應(yīng)用的至關(guān)重要的一個(gè)環(huán)節(jié)。本研究中為了降低CVD金剛石表面粗糙度,采用了ECR等離子體刻蝕與機(jī)械拋光相結(jié)合的拋光方式,充分利用機(jī)械拋光技術(shù)的低成本、方便以及ECR等離子體刻蝕的高效率、低損傷等兩者的優(yōu)點(diǎn),從而提高機(jī)械拋光效率和金剛石表面質(zhì)量。其具體工作如下:1.運(yùn)用ECR等離子體刻蝕和機(jī)械拋光技術(shù)相結(jié)合的方法來(lái)拋光CVD金剛石,并和單一的機(jī)械拋光方法相比較,研究了等離子體刻蝕對(duì)后續(xù)機(jī)械拋光的影響,結(jié)果發(fā)現(xiàn):金剛石經(jīng)ECR等離子體刻蝕后非晶碳含量有一定程度降低,刻蝕過(guò)程在金剛石晶面形成的疏松表面有利于機(jī)械拋光,金剛石表面平均粗糙度更加快速降低。對(duì)比實(shí)驗(yàn)表明等離子體刻蝕對(duì)機(jī)械拋光前期的拋光效率的增強(qiáng)效果更為明顯。2.采用ECR等離子體對(duì)金剛石片進(jìn)行了刻蝕實(shí)驗(yàn),研究了磁場(chǎng)位形、樣品臺(tái)大小和樣品臺(tái)偏壓這三個(gè)工藝參數(shù)對(duì)CVD金剛石刻蝕效果的影響,并分別對(duì)樣品進(jìn)行了拋光處理。結(jié)果發(fā)現(xiàn):(1)收斂場(chǎng)相比于發(fā)散場(chǎng),由于對(duì)等離子體具有約束和聚焦作用,離子束更聚集且具有更高能量,產(chǎn)生了更強(qiáng)的刻蝕效果,金剛石表面缺陷層更厚,從而更為明顯的提高了機(jī)械拋光效率。(2)樣品臺(tái)大小對(duì)刻蝕有影響。使用小樣品臺(tái)時(shí),自偏壓對(duì)離子束更強(qiáng)的匯聚作用和刻蝕后表面的場(chǎng)致發(fā)射,使得轟擊金剛石片表面的離子能量和數(shù)量都得到了增強(qiáng)。相比于大樣品臺(tái),更多高能離子轟擊金剛石樣品表面產(chǎn)生了更厚的缺陷層,刻蝕對(duì)機(jī)械拋光效率的增強(qiáng)效果更為顯著。(3)隨著樣品臺(tái)加載偏壓的改變,在等離子體直流鞘層和CVD金剛石表面微區(qū)域電場(chǎng)的共同作用下,ECR等離子體刻蝕CVD金剛石的結(jié)果表明離子束產(chǎn)生了選擇性刻蝕。其中在偏壓為-30V時(shí),由于粒子束轟擊作用集中在高位區(qū)域,且區(qū)域較廣,因此高位區(qū)域缺陷層更厚,機(jī)械拋光時(shí)更易被除去,從而具有更高的拋光效率。3.在原有的刻蝕后機(jī)械拋光的工藝基礎(chǔ)上,增加銅質(zhì)掩膜,探究了掩膜在刻蝕增強(qiáng)CVD金剛石機(jī)械拋光中的作用,并對(duì)拋光前后金剛石表面性能進(jìn)行了檢測(cè),結(jié)果發(fā)現(xiàn):(1)增加了銅質(zhì)掩膜的拋光工藝具有更高的拋光效率,同時(shí)對(duì)拋光過(guò)程中CVD金剛石的減薄有一定的抑制作用,減少了CVD金剛石的損耗,從而降低了生產(chǎn)成本,是一種具有較高拋光效率、低成本、低損耗的拋光方法。(2)與未拋光金剛石相比,拋光后的金剛石表面光潔平整,質(zhì)量有一定提高,潤(rùn)濕角增大。
[Abstract]:CVD diamond has become an attractive engineering material in the future due to its excellent performance. It has been widely used in hard cutting tools, optics, heat, acoustics, microelectronics and so on. However, the application of these fields all require a certain smoothness of CVD diamond surface. Nowadays, due to the columnar growth characteristics of CVD diamond, the thickness of diamond is uneven, the grain size and orientation are different, resulting in a rough surface, which limits its application. Therefore, CVD diamond surface polishing technology has become an important part of diamond application according to different industrial application requirements. In this study, in order to reduce the surface roughness of CVD diamond, ECR plasma etching and mechanical polishing are used to fully utilize the low cost and convenience of mechanical polishing technology and the high efficiency of ECR plasma etching. Low damage and other advantages of both, thereby improving mechanical polishing efficiency and diamond surface quality. Its specific work is as follows: 1. The effect of plasma etching on the subsequent mechanical polishing of CVD diamond was studied by using ECR plasma etching and mechanical polishing technology, and compared with the single mechanical polishing method. The results show that the amorphous carbon content of diamond etched by ECR plasma is reduced to a certain extent. The loose surface formed in the etching process is favorable to mechanical polishing, and the average roughness of diamond surface decreases more rapidly. The contrast experiment shows that plasma etching can enhance the polishing efficiency in the early stage of mechanical polishing more obviously. ECR plasma was used to etch diamond wafers. The effects of three technological parameters, magnetic field configuration, sample table size and bias voltage, on the etch effect of CVD diamond were studied, and the samples were polished. The results show that compared with the divergence field, the ion beam is more concentrated and has higher energy due to the confinement and focusing of the plasma, which results in stronger etching effect and thicker defect layer on the diamond surface. Thus, the mechanical polishing efficiency is improved more obviously.) the size of the sample table has an effect on the etching. When the small sample table is used, the self-bias voltage has a stronger convergent effect on the ion beam and the field emission of the etched surface increases the ion energy and the amount of ion bombarding the diamond chip surface. Compared with the large sample table, more high-energy ions bombarded the diamond sample surface to produce a thicker defect layer, and the enhancement effect of etching on the mechanical polishing efficiency was more remarkable. The results of CVD diamond etching by plasma DC sheath and microelectric field on CVD diamond surface show that the ion beam produces selective etching. When the bias voltage is -30V, the particle beam bombardment is concentrated in the high position area, and the area is wide, so the defect layer in the high position area is thicker and the mechanical polishing process is easier to be removed, so it has higher polishing efficiency. On the basis of the original mechanical polishing process after etching, the copper mask is added, and the role of mask film in etching and strengthening CVD diamond mechanical polishing is explored, and the surface properties of diamond before and after polishing are tested. The results show that the polishing process of copper mask has higher polishing efficiency, and it can restrain the thinning of CVD diamond, reduce the loss of CVD diamond, and thus reduce the production cost, the result shows that: 1) the polishing process of copper mask has higher polishing efficiency, and at the same time, it can inhibit the thinning of CVD diamond in the polishing process, thus reducing the cost of production. It is a polishing method with high efficiency, low cost and low loss. Compared with the unpolished diamond, the polished diamond surface is smooth and smooth, the quality is improved, and the wetting angle is increased.
【學(xué)位授予單位】：武漢工程大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TQ163

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