本文選題：熱蒸發(fā)　切入點(diǎn)：結(jié)構(gòu)表征　出處：《山東師范大學(xué)》2015年碩士論文

【摘要】：伴隨社會(huì)的進(jìn)步和科技的發(fā)展，以半導(dǎo)體納米結(jié)構(gòu)研究作為焦點(diǎn)的低維納米材料的研究變成了一個(gè)熱點(diǎn)問(wèn)題,半導(dǎo)體材料受量子尺寸效應(yīng)、小尺寸效應(yīng)、表面效應(yīng)、量子隧道效應(yīng)、體積效應(yīng)等特性的影響，表現(xiàn)出奇特的介觀物理特性，通過(guò)各種納米材料的特殊性質(zhì),科學(xué)家們?cè)诟鱾�(gè)領(lǐng)域取得了巨大的突破,它還可以促進(jìn)納米材料的應(yīng)用越來(lái)越廣泛,伴隨著納米材料技術(shù)的發(fā)展，納米材料對(duì)人們的影響也已經(jīng)涉及到方方面面，例如太陽(yáng)能電池、透明導(dǎo)電電極、氣敏傳感器、晶體管等，目前，國(guó)內(nèi)外對(duì)于納米材料的研究主要集中在兩個(gè)方面，一是如何運(yùn)用簡(jiǎn)單而行之有效的方法制備低維納米材料，二是對(duì)低維納米材料的基本特性，包括表面結(jié)構(gòu)形貌、光學(xué)特性、輸運(yùn)特性等的測(cè)試表征。本文對(duì)Ga2O3粉末和Au覆蓋的Si(111)基片加熱不同時(shí)間,利用熱蒸發(fā)法，通過(guò)控制不同退火時(shí)間和退火溫度制備了不同的Ga2O3納米結(jié)構(gòu)，并用掃描電子顯微鏡(SEM)、透射電子顯微鏡(TEM)、選區(qū)電子衍射（SAED）、X射線能譜儀（EDS）和X射線衍射(XRD)技術(shù)對(duì)樣品進(jìn)行了結(jié)構(gòu)、形貌的表征。主要內(nèi)容包括： （1）用簡(jiǎn)易的熱蒸發(fā)方法，將Ga2O3粉末與石墨粉充分混合作為原料，以Au為催化劑，高純N2為載氣，在1150℃溫度下生長(zhǎng)不同的時(shí)間，，生長(zhǎng)30min時(shí)在Au覆蓋的Si(111)基片上得到了大量的直徑在100nm-500nm范圍的Ga2O3納米線，而當(dāng)原料加熱到60min、90min、120min時(shí)，出現(xiàn)大量Ga2O3納米棒結(jié)構(gòu)，說(shuō)明生長(zhǎng)時(shí)間對(duì)樣品的形態(tài)結(jié)構(gòu)有一定的影響。TEM圖像、XRD測(cè)試結(jié)果以及拉曼光譜顯示樣品為氧化鎵。 （2）將Ga2O3粉末與石墨粉充分混合作為原料，以Au為催化劑，高純N2為載氣，用熱蒸發(fā)法在1200℃生長(zhǎng)不同時(shí)間制備了大量規(guī)律生長(zhǎng)的Ga2O3納米線結(jié)構(gòu)，在這一溫度下我們發(fā)現(xiàn)了一個(gè)核殼生長(zhǎng)繼而脫落的有趣現(xiàn)象。SEM顯示,在整個(gè)樣品表面形成大量直徑約200-300nm的蒲公英狀納米線。能量色散譜(EDS)和拉曼光譜都顯示，樣品為純凈的Ga2O3。最后,簡(jiǎn)要討論了這種奇特納米結(jié)構(gòu)的生長(zhǎng)機(jī)制。 （3）以金做催化劑，在1300℃通過(guò)熱蒸發(fā)Ga2O3粉末與石墨粉混合物加熱不同時(shí)間，在15min到45min制備了直徑為150nm-250nm，長(zhǎng)達(dá)數(shù)百微米的Ga2O3納米線，而當(dāng)加熱到60min以后，出現(xiàn)明顯的納米管結(jié)構(gòu)，進(jìn)一步說(shuō)明了生長(zhǎng)時(shí)間對(duì)樣品形態(tài)結(jié)構(gòu)的影響。最后，討論了氧化鎵納米管的生長(zhǎng)機(jī)制。
[Abstract]:With the progress of society and the development of science and technology, the research of low-dimensional nanomaterials focused on semiconductor nanostructures has become a hot issue. Semiconductor materials are affected by quantum size effect, small size effect, surface effect.The effects of quantum tunneling effect, volume effect and other properties show peculiar mesoscopic physical properties. Through the special properties of various nanomaterials, scientists have made great breakthroughs in various fields.It can also promote the application of nanomaterials more and more widely. With the development of nanomaterials technology, the impact of nanomaterials on people has been involved in many aspects, such as solar cells, transparent conductive electrodes, gas sensors,At present, the research on nanomaterials at home and abroad is mainly focused on two aspects: one is how to use simple and effective methods to prepare low-dimensional nanomaterials, the other is the basic characteristics of low-dimensional nanomaterials.Including the surface morphology, optical properties, transport characteristics and so on.In this paper, different Ga2O3 nanostructures were prepared by controlling different annealing time and annealing temperature by means of thermal evaporation method for heating Ga2O3 powder and au covered SiN111) substrate.The structure and morphology of the samples were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAEDX) and X-ray diffraction (XRD) techniques.The main elements include:1) by a simple method of thermal evaporation, Ga2O3 powder and graphite powder were mixed as raw materials, au as catalyst and high purity N2 as carrier gas for different time at 1150 鈩

本文編號(hào)：1714514