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飛秒激光制備黑硅材料的實驗研究

發(fā)布時間:2018-02-26 00:11

  本文關(guān)鍵詞: 飛秒激光 黑硅材料 堿溶液 反射率 尖峰結(jié)構(gòu) 出處:《北京工業(yè)大學(xué)》2015年碩士論文 論文類型:學(xué)位論文


【摘要】:黑硅作為一種新型硅材料,在可見光區(qū)域具有極強的光吸收能力,所以在太陽能電池、光探測等領(lǐng)域有著巨大的應(yīng)用前景。近些年來,黑硅材料得到了業(yè)界的廣泛關(guān)注,其制備方法也成為當前的研究熱點。黑硅材料的制備方法多種多樣,但都有各自的不足,本文提出了一種制備黑硅材料的新方法,即在堿溶液中利用飛秒激光制備黑硅,通過實驗,獲得了較理想的實驗結(jié)果,證明了此實驗方法的有效性。論文中通過實驗探究了實驗參數(shù)對黑硅表面形貌和反射率的影響,這一實驗結(jié)果對激光制備黑硅表面微結(jié)構(gòu)的形態(tài)控制以及材料應(yīng)用等方面都有著重要的意義。主要工作概括為以下幾點:1.搭建了在堿溶液中利用飛秒激光制備黑硅的實驗裝置,制得的黑硅樣品,在原子力顯微鏡下觀察到叢林狀尖峰結(jié)構(gòu),與拋光硅相比,黑硅樣品可以大大降低反射率。2.實驗研究了掃描速度對黑硅材料反射率的影響,發(fā)現(xiàn)在0.1 mm/s、0.5mm/s和1.0 mm/s的三種掃描速度中,當激光能量相同時,掃描速度越慢,其樣品的反射率越低。3.在探究飛秒激光脈沖能量對黑硅表面形貌和反射率的影響時,實驗中激光能量的變化范圍為400 2000μJ,分析尖峰高度隨激光能量的變化發(fā)現(xiàn),隨著激光能量的增加,尖峰的高度是先增加后降低。通過分析反射率隨激光能量的變化發(fā)現(xiàn),隨著激光能量的增加,反射率是先降低后增加。通過實驗獲得了最佳的激光能量值,即1400μJ,此時黑硅樣品的尖峰高度最大,反射率最低,大約為5.6%。4.在堿溶液中利用飛秒激光制備黑硅,此方法與Mazur實驗室的制備方法相比,避免了昂貴的真空設(shè)備,并且不會產(chǎn)生SF6、H2S等劇毒氣體,因而不會對人體和環(huán)境造成危害。與在硫酸中制備黑硅的方法相比,此實驗中選擇的是2 wt%的Na OH溶液,這是低濃度堿,不會污染水體和土壤。且此方案實驗設(shè)備簡單、易操作,堿溶液價格低廉,其成本遠遠小于六氟化硫氣體。
[Abstract]:Black silicon, as a new type of silicon material, has very strong optical absorption ability in the visible region, so it has a great application prospect in solar cells, light detection and other fields. In recent years, black silicon materials have been widely concerned by the industry. In this paper, a new method of preparing black silicon material is proposed, which is to use femtosecond laser to prepare black silicon in alkali solution. The experimental results show that the method is effective. The influence of experimental parameters on the surface morphology and reflectivity of black silicon is investigated. The experimental results are of great significance to the morphology control and material application of the surface microstructure of black silicon prepared by laser. The main work is summarized as follows: 1. An experimental device for preparing black silicon by femtosecond laser in alkaline solution has been built. The bushlike peak structure of the black silicon sample was observed under atomic force microscope. Compared with polished silicon, the black silicon sample can greatly reduce the reflectivity. 2. The effect of scanning speed on the reflectivity of black silicon material is studied experimentally. It was found that in the three scanning velocities of 0. 1 mm / s 0.5 mm / s and 1. 0 mm/s, the slower the scanning speed was, the lower the reflectivity of the sample was when the laser energy was the same. The effect of femtosecond laser pulse energy on the surface morphology and reflectivity of black silicon was investigated. In the experiment, the range of laser energy is 400 渭 J. It is found that the peak height increases first and then decreases with the increase of laser energy. It is found by analyzing the variation of reflectivity with laser energy. With the increase of laser energy, the reflectivity decreases first and then increases. The optimum laser energy value, i.e. 1400 渭 J, is obtained through experiments. The peak height of the black silicon sample is the highest and the reflectivity is the lowest. In alkaline solution, black silicon is prepared by femtosecond laser, which avoids expensive vacuum equipment and does not produce highly toxic gases, such as SF6H2S, compared with the method used in the Mazur laboratory. Compared with the method of preparing black silicon in sulfuric acid, the NaOH solution of 2 wt% is chosen in this experiment, which is low concentration alkali and does not pollute water and soil. The experimental equipment of this scheme is simple. Easy to operate, alkali solution low price, its cost is far less than sulfur hexafluoride gas.
【學(xué)位授予單位】:北京工業(yè)大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號】:TQ127.2

【參考文獻】

相關(guān)期刊論文 前1條

1 戴小宛;張德賢;蔡宏琨;仲玉泉;于倩;蘇超;;單晶硅表面制絨及其特性研究[J];人工晶體學(xué)報;2014年02期

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本文編號:1535724

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