本文選題：介質(zhì)阻擋微放電 + 氮化硅　； 參考：《中國(guó)科學(xué)技術(shù)大學(xué)》2017年碩士論文

【摘要】：在半導(dǎo)體制造和微機(jī)電系統(tǒng)領(lǐng)域,等離子體技術(shù)是一種不可或缺的加工手段。為了實(shí)現(xiàn)任意圖形的無(wú)掩膜加工,課題組之前提出利用倒金字塔微空心陰極放電器陣列,來(lái)實(shí)現(xiàn)對(duì)樣品高精度、高效率的無(wú)掩膜掃描加工。該微放電器陣列采用的是電極-絕緣層-電極的三明治結(jié)構(gòu),在直流電場(chǎng)的激勵(lì)下,倒金字塔空心微陰極內(nèi)產(chǎn)生的等離子體和電極層直接接觸,由于等離子體中的重離子對(duì)電極層的物理轟擊作用以及熱阻效應(yīng),微放電器的電極層很容易損壞而使整個(gè)器件失效,微放電器的壽命很難得以提高。為了解決直流微空心陰極放電器陣列壽命短的問(wèn)題,本文通過(guò)在微空心陰極放電器陣列的上下金屬電極上沉積一層氮化硅膜以保護(hù)電極層,采用交流激勵(lì)的介質(zhì)阻擋放電形式,有效阻止輝光放電向弧光的轉(zhuǎn)變,減小熱效應(yīng)對(duì)器件的破壞,進(jìn)而提高微放電器器的壽命,為后續(xù)無(wú)掩膜加工奠定良好的基礎(chǔ)。論文的主要內(nèi)容如下:采用COMSOL對(duì)所設(shè)計(jì)的倒金字塔介質(zhì)阻擋微放電器進(jìn)行二維等離子體仿真,通過(guò)仿真研究,得到了倒金字塔內(nèi)電子密度分布、電勢(shì)分布以及不同介質(zhì)條件下的電子密度分布規(guī)律,從而為器件的介質(zhì)層材料選擇和工作條件的選擇提供理論依據(jù)。器件的加工制備方面,主要針對(duì)工藝過(guò)程以下兩個(gè)難題,即下電極圖形化成功率低,以及因多層膜應(yīng)力不匹配導(dǎo)致SiN.x介質(zhì)層出現(xiàn)裂紋進(jìn)行分析解決。針對(duì)第一個(gè)問(wèn)題,本文采用較厚的光刻膠作為下電極濕法刻蝕圖形化掩膜保護(hù)住微腔上邊緣實(shí)現(xiàn)高成功率下電極圖形化。針對(duì)第二個(gè)問(wèn)題,本文通過(guò)多層膜應(yīng)力匹配仿真得到器件殘余應(yīng)力和變形最小時(shí)所需的SiNx本征應(yīng)力,然后建立PECVD射頻功率、反應(yīng)氣體流量比、氣壓、溫度等工藝參數(shù)與SiNx本征應(yīng)力和沉積速率的關(guān)系,得到目標(biāo)應(yīng)力值對(duì)應(yīng)的工藝參數(shù)組合,在此參數(shù)下成功制備物理化學(xué)性能良好的SiNx介質(zhì)層,并最終制備得到質(zhì)量良好的介質(zhì)阻擋微放電器陣列。器件電學(xué)性能表征方面,研究了限流電阻、工作氣壓、工作電壓等參數(shù)對(duì)放電時(shí)電學(xué)特性的影響,分析了器件最終失效的原因。為后續(xù)無(wú)掩膜加工時(shí)的介質(zhì)阻擋微放電的工作參數(shù)選擇提供實(shí)驗(yàn)依據(jù)。
[Abstract]:Plasma technology is an indispensable processing tool in semiconductor manufacturing and micro-electromechanical systems. In order to realize the unmasked machining of arbitrary graphics, we proposed to use the inverted pyramid microhollow cathode array to realize the high precision and high efficiency non-mask scanning processing of the samples. The array adopts sandwich structure of electrode, insulation layer and electrode. Under the excitation of DC field, the plasma produced in the hollow microcathode of the inverted pyramid is in direct contact with the electrode layer. Due to the physical bombardment and thermal resistance of heavy ions on the electrode layer in plasma, the electrode layer of microdischarger is easily damaged, which makes the whole device fail, and the lifetime of microdischarge apparatus is difficult to be improved. In order to solve the problem of short life of DC micro hollow cathode discharger array, a layer of silicon nitride film was deposited on the upper and lower metal electrode of the micro hollow cathode discharge array to protect the electrode layer, and the form of dielectric barrier discharge was adopted. It can effectively prevent the change from glow discharge to arc, reduce the thermal damage to the device, and then improve the life of the microcharger, and lay a good foundation for the subsequent processing without mask. The main contents of the thesis are as follows: the electron density distribution in the inverted pyramid is obtained by using COMSOL to simulate the two-dimensional plasma of the inverted pyramid dielectric barrier microamplifier. The potential distribution and electron density distribution under different dielectric conditions provide theoretical basis for the selection of dielectric layer materials and working conditions of the devices. In the fabrication of the devices, the following two problems are discussed, namely, the low success rate of the lower electrode graphics and the analysis and solution of the cracks in the SiN.x dielectric layer caused by the mismatch of the stress of the multilayer film. In order to solve the first problem, the thick photoresist is used as the lower electrode wet etching graphical mask to protect the upper edge of the microcavity to realize the high success rate of electrode graphics. Aiming at the second problem, the residual stress and the intrinsic stress of SiNx are obtained by multi-layer stress matching simulation. Then the radio frequency power of PECVD, the ratio of reaction gas flow and the pressure are established. The relationship between temperature and Sinx intrinsic stress and deposition rate, the combination of process parameters corresponding to the target stress value was obtained, and the SiNx dielectric layer with good physical and chemical properties was successfully prepared under these parameters. Finally, a high quality dielectric barrier microamplifier array was prepared. In the aspect of electrical performance characterization, the influence of current limiting resistance, working pressure and working voltage on the electrical characteristics during discharge is studied, and the reasons for the ultimate failure of the device are analyzed. The experimental basis is provided for the selection of working parameters of dielectric barrier microdischarge in non-mask machining.
【學(xué)位授予單位】：中國(guó)科學(xué)技術(shù)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：O461.2

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本文編號(hào)：2021710