本文選題：球形量子點(diǎn) + 雜質(zhì)態(tài)�。� 參考：《內(nèi)蒙古農(nóng)業(yè)大學(xué)》2017年碩士論文

【摘要】：在連續(xù)介電模型和有效質(zhì)量近似下,運(yùn)用變分法研究了半導(dǎo)體有限高勢(shì)壘球形量子點(diǎn)中雜質(zhì)態(tài)的基態(tài)結(jié)合能�？紤]電子有效質(zhì)量隨著位置的改變對(duì)雜質(zhì)態(tài)基態(tài)結(jié)合能的影響,并在此基礎(chǔ)上計(jì)算了壓力和溫度對(duì)球形量子點(diǎn)雜質(zhì)態(tài)結(jié)合能的影響。分別數(shù)值計(jì)算了 AlxGa1-xAs/GaAs和AlxGa1-xN/GaN材料球形量子點(diǎn)雜質(zhì)態(tài)基態(tài)結(jié)合能隨量子點(diǎn)尺寸和三元混晶壘材料中Al組分的變化關(guān)系,研究了電子有效質(zhì)量隨位置的改變對(duì)結(jié)合能的影響,并與不考慮電子有效質(zhì)量隨位置的改變做了比較。討論了球形量子點(diǎn)的溫度及其壓力效應(yīng)。對(duì)兩種材料的計(jì)算結(jié)果表明有如下共同特征:當(dāng)量子點(diǎn)半徑較小時(shí),電子有效質(zhì)量隨位置變化增加了雜質(zhì)態(tài)基態(tài)結(jié)合能,隨著量子點(diǎn)半徑增大雜質(zhì)態(tài)基態(tài)結(jié)合能的增加幅度變小;量子點(diǎn)半徑比較大時(shí),電子有效質(zhì)量隨位置的改變降低了雜質(zhì)態(tài)的基態(tài)結(jié)合能;隨著三元混晶Al組分的增加,雜質(zhì)態(tài)的基態(tài)結(jié)合能單調(diào)遞增;另外,雜質(zhì)態(tài)結(jié)合能隨外加壓力的增大幾乎呈線性增加,但隨溫度的升高反而降低。
[Abstract]:Under the continuous dielectric model and the effective mass approximation, the ground state binding energies of the impurity states in the semiconductor finite high barrier spherical quantum dots are studied by using the variational method. The effect of the effective mass of the electron on the binding energy of the ground state of the impurity state is considered, and the effects of pressure and temperature on the binding energy of the impurity state of the spherical quantum dot are calculated. The ground state binding energies of spherical quantum dots in AlxGa1-xAs-GaAs and AlxGa1-xNrGaN materials are numerically calculated, respectively. The effect of the effective mass of electrons on the binding energy is studied. It is compared with the change of the effective mass of electron with the change of position. The temperature and pressure effects of spherical quantum dots are discussed. The calculated results of the two materials show that when the radius of quantum dots is small, the effective mass of the electron increases the binding energy of the ground state of the impurity state with the change of position. With the increase of the radius of the quantum dot, the binding energy of the ground state decreases with the increase of the radius of the quantum dot, the binding energy of the ground state decreases with the change of the effective mass of the electron with the change of the position of the quantum dot, and with the increase of the Al component of the ternary mixed crystal, In addition, the binding energy of impurity states increases linearly with the increase of external pressure, but decreases with the increase of temperature.
【學(xué)位授予單位】：內(nèi)蒙古農(nóng)業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O471.1

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