本文選題：碲化銻　切入點(diǎn)：水熱法　出處：《新疆大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：本文采用的是簡(jiǎn)單的水熱法,在堿性的環(huán)境下以SbCl3粉末作為Sb源、Na2TeO3粉末作為Te源,NaBH4做為還原劑,沒有其他粘合劑參與的條件下,通過控制各組分比例以及堿性濃度從而控制體系的生長(zhǎng)速率。對(duì)所得樣品進(jìn)行了掃描電子顯微鏡(SEM)、X射線衍射(XRD)、透射電子顯微鏡(HRTEM)、選取電子衍射(SAED)和高溫差式掃描量熱儀(DSC)等測(cè)試,測(cè)試結(jié)果表明成功的制備了三方晶系碲化銻納米帶結(jié)構(gòu),此結(jié)構(gòu)下的熔點(diǎn)為420℃,相較于塊狀碲化銻低的多(650℃)。由于納米帶狀結(jié)構(gòu)具有較低的熔點(diǎn)和納米化的結(jié)構(gòu),因此這種結(jié)構(gòu)對(duì)于提高熱電性能方面有著很大的幫助。本實(shí)驗(yàn)使用高真空熱蒸發(fā)鍍膜法制備了結(jié)晶性良好的單晶碲化銻薄膜,分別在不同襯底上制備了連續(xù)的碲化銻薄膜。通過對(duì)比及觀察,研究了不同襯底對(duì)樣品生長(zhǎng)的影響,發(fā)現(xiàn)層狀結(jié)構(gòu)的氟晶云母更適合平整薄膜的生長(zhǎng)。對(duì)所得樣品進(jìn)行了SEM、XRD、HRTEM、SAED和AFM等測(cè)試,觀察到了樣品的六方片堆疊成柱狀生長(zhǎng),從而形成連續(xù)薄膜,薄膜表面光滑無(wú)雜質(zhì)和顆粒。本實(shí)驗(yàn)為碲化銻的薄膜的生長(zhǎng)提供了新的方法。
[Abstract]:In this paper, a simple hydrothermal method with SbCl3 powder as SB source Na _ 2TeO _ 3 powder as reducing agent and no other binder being used as reducing agent in alkaline environment is used. The growth rate of the system was controlled by controlling the proportion of components and the alkaline concentration. The samples were scanned by scanning electron microscope (SEM), transmission electron microscope (TEM), electron diffraction (SAEDE) and high temperature differential scanning. Calorimeter, DSC-and other tests, The results show that the cubic antimony telluride nanocrystalline structure has been successfully prepared. The melting point of the nanocrystalline antimony telluride nanostrip is 420 鈩，

本文編號(hào)：1574453