本文關(guān)鍵詞：多鐵異質(zhì)結(jié)中電場調(diào)控磁性的研究　出處：《山東大學》2017年碩士論文　論文類型：學位論文

  更多相關(guān)文章： 磁性薄膜 自然共振 磁電耦合 磁化翻轉(zhuǎn)

【摘要】：伴隨著第三次科技革命的發(fā)生以及現(xiàn)代科學技術(shù)的迅猛發(fā)展,多鐵性材料應(yīng)用于高性能磁性器件顯現(xiàn)出尺寸小、速度快、精度高等特點,從而廣泛地用于當代通信技術(shù)、信息存儲系統(tǒng)、電磁干擾技術(shù)等領(lǐng)域。多鐵性材料是具有兩種或以上鐵性質(zhì),例如鐵電性,鐵磁性和鐵彈性,并且重要的是理解并能夠在磁電效應(yīng)方面操縱多鐵性材料的磁性。由于磁電耦合(ME)效應(yīng)的快速,低功率的工作方式,多鐵性材料系統(tǒng)通常用于制造傳感器、多狀態(tài)存儲器和其它自旋電子器件。對于應(yīng)用于微波頻段的磁性薄膜材料,磁性材料的電磁參數(shù)和復(fù)數(shù)磁導(dǎo)率的表征成為研究的主要的內(nèi)容同時具有相當重要的意義。本文主要研究了單層金屬磁性薄膜材料組成地FeCo/PMN-PT多鐵異質(zhì)結(jié)以及磁性納米薄膜的靜態(tài)、動態(tài)磁化特性和磁電耦合特性和FeCo/Ta多層膜多鐵異質(zhì)結(jié)中電場調(diào)控剩余磁化強度在信息儲存領(lǐng)域的應(yīng)用。利用射頻磁控濺射技術(shù),通過改變制備工藝在PMN-PT(011)襯底上制備了不同磁性薄膜層厚度的FeCo/PMN-PT多鐵異質(zhì)結(jié),研究了在不同工藝下對樣品磁性能的影響,同時在矢量網(wǎng)絡(luò)分析儀(E5071C)上利用傳輸線微擾法測試出整個測量夾具端口的S參數(shù)的差異從而計算推導(dǎo)出樣品的微波磁電參數(shù),通過研究磁性薄膜樣品矯頑場、磁各向異性和自然共振頻率變化,發(fā)現(xiàn)初始自然共振頻率和磁性薄膜矯頑場的關(guān)系以及電場對磁性材料磁各向異性2320e-420Oe的調(diào)控,導(dǎo)致樣品自然共振頻率最大2.96GHz-4GHz的漂移。同時發(fā)現(xiàn)電驅(qū)動的多鐵異質(zhì)結(jié)樣品的磁化翻轉(zhuǎn)與薄膜樣品中的磁疇的取向和結(jié)構(gòu)變化有關(guān)。利用射頻磁控濺射設(shè)備在PMN-PT(011)襯底上制備了 FeCo/PMN-PT和[FeCo(9m)/Ta(4nm)]5/PMN-PT多鐵異質(zhì)結(jié),分別測量了多鐵異質(zhì)結(jié)中剩磁Mr在不同電場條件下的變化。我們發(fā)現(xiàn)在FeCo/PMN-PT和[FeCo(9m)/Ta(4nm)]5/PMN-PT多鐵異質(zhì)結(jié)中都發(fā)現(xiàn)了剩余磁化強度Mr的四態(tài)變化,只是在FeCo/PMN-PT異質(zhì)結(jié)中Mr的四態(tài)表現(xiàn)的并不穩(wěn)定而且區(qū)分度也不是很高;因此,我們又測量了[FeCo(9m)/Ta(4nm)]5/PMN-PT多鐵異質(zhì)結(jié)中的剩余磁化強度,發(fā)現(xiàn)了穩(wěn)定的便于區(qū)分的Mr的四態(tài)變化。同時,我們還測量了樣品的Mr-E和S-E曲線,從物理機制上解釋了應(yīng)變調(diào)控的磁電耦合效應(yīng)導(dǎo)致的多態(tài)存儲。這就為高密度、大容量的信息儲存提供了重要的理論與技術(shù)支持。利用磁控濺射技術(shù)在(011)方向切割的PMN-PT襯底上沉積了FeCo/FeMn/Ta/PMN-PT、FeGa/FeMn/Ta/PMN-PT 多層膜結(jié)構(gòu),研究了這種結(jié)構(gòu)的磁電性能、層間耦合等,發(fā)現(xiàn)FeMn反鐵磁層的引入對兩種異質(zhì)結(jié)構(gòu)的影響存在差異,這是因為在界面處,反鐵磁層中的未補償磁矩相對于FeGa層足夠大,而對于FeCo層并不足夠大。所以在FeGa/FeMn體系中觀察到了矯頑力的變化和交換偏置現(xiàn)象,而在FeCo/FeMn體系中只觀察到了明顯的矯頑力的變化。
[Abstract]:With the emergence of the third scientific and technological revolution and the rapid development of modern science and technology, the application of multi-iron materials in high performance magnetic devices shows the characteristics of small size, fast speed, high precision and so on. So it is widely used in modern communication technology, information storage system, electromagnetic interference technology and other fields. Multi-iron materials have two or more iron properties, such as ferroelectricity, ferromagnetism and ferroelasticity. And it is important to understand and be able to manipulate the magnetism of ferromagnetic materials in magnetoelectric effect. Multi-iron material systems are usually used to manufacture sensors, multi-state memories and other spin electronic devices. For magnetic thin film materials used in microwave frequency. The characterization of electromagnetic parameters and complex permeability of magnetic materials is also of great significance. In this paper, the composition of monolayer metal magnetic thin films (FeCo/PMN-P) has been studied. T polyferric heterojunction and the static state of magnetic nanocrystalline films. The application of dynamic magnetization and magnetoelectric coupling characteristics and the application of the residual magnetization in the field of information storage in FeCo/Ta multilayer multilayer iron heterojunction. The RF magnetron sputtering technique is used. FeCo/PMN-PT polyferric heterostructures with different thickness of magnetic thin films were prepared on PMN-PTO 011 substrates by changing the preparation process. The effects of different processes on the magnetic properties of the samples were studied. At the same time, by using the transmission line perturbation method, the difference of S parameters of the whole measuring fixture port is measured on the vector network analyzer E5071C, and the microwave magnetoelectric parameters of the sample are calculated. The changes of coercive field, magnetic anisotropy and natural resonance frequency of magnetic thin films were studied. It is found that the relationship between the initial natural resonance frequency and the coercive field of the magnetic thin film and the regulation of the electric field on the magnetic anisotropy 2320e-420Oe. The maximum natural resonance frequency of the sample is 2.96 GHz to 4GHz. It is also found that the magnetization flip of the electrodriven polyferric heterojunction sample is related to the orientation and structure change of the magnetic domain in the thin film sample. RF magnetron sputtering equipment in PMN-PT(). FeCo/PMN-PT and. [5 / 5 PMN-PT polyiron heterojunction. The remanent magnetic Mr (Mr) changes in polyferric heterojunction under different electric fields have been measured respectively. We have found that in the case of FeCo/PMN-PT and. [In the 5 / 5 / PMN-PT multiferroheterojunction, the four-state change of the residual magnetization (Mr) has been found. Only in the FeCo/PMN-PT heterojunction, the four states of Mr are not stable and the degree of differentiation is not very high. So we measured it again. [The residual magnetization in 5 / 5 PMN-PT polyferric heterojunction shows a stable and easily distinguishable Mr four-state change. At the same time. We also measured the Mr-E and S-E curves of the samples and explained from the physical mechanism the polymorphic storage caused by the magnetoelectric coupling effect controlled by strain. This is called high density. Large capacity information storage provides important theoretical and technical support. The FeCo/FeMn/Ta/PMN-PT is deposited on the directionally cut PMN-PT substrate. The magnetoelectric properties and interlaminar coupling of FeGa/FeMn/Ta/PMN-PT multilayer structure are studied. It is found that the influence of the introduction of FeMn antiferromagnetic layer on the two heterostructures is different because the uncompensated magnetic moment in the antiferromagnetic layer is larger than that in the FeGa layer at the interface. However, the FeCo layer is not large enough, so the change of coercivity and exchange bias are observed in FeGa/FeMn system. The change of coercivity was observed only in FeCo/FeMn system.
【學位授予單位】：山東大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：O484;TP333

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