本文關(guān)鍵詞：熱還原—真空蒸餾法回收ITO廢料中金屬銦的研究　出處：《昆明理工大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： ITO廢料 熱還原 響應(yīng)曲面法 真空蒸餾法 銦

【摘要】：隨著電子信息技術(shù)的發(fā)展,ITO靶材主要用于生產(chǎn)液晶顯示屏的透明電極。每年用于ITO靶材方面的銦在560t以上,占銦總消耗量的80%以上。但在ITO靶材磁控濺射方法制備ITO薄膜中,靶材的利用率低,并且ITO靶材加工過程中會產(chǎn)生大量的邊角料與切削粉末,使得ITO靶材的利用率僅有30%。且廢料中含銦在80%以上,因此研究從ITO廢靶中回收金屬銦具有重要意義,本文研究了CO還原-真空蒸餾分離的方法處理ITO廢料還原銦、錫。本文首先對CO還原氧化銦和氧化錫進行了熱力學(xué)分析與動力學(xué)分析探討,得到還原反應(yīng)發(fā)生的溫度范圍和可能存在的控制步驟。通過單因素實驗研究表明:最佳的反應(yīng)條件為溫度950℃,CO流量為40ml/min,還原時間為50min,此時銦錫合金的還原率大于97%,合金中銦的還原率大于99%錫的還原率大于98%,在實驗研究的基礎(chǔ)上,利用響應(yīng)曲面法對實驗條件進行了優(yōu)化。動力學(xué)實驗研究表明:在750℃～950℃溫度段還原反應(yīng)處于擴散傳質(zhì)控制階段,其表觀擴散活化能為52.85kJ/mol。經(jīng)過氧化銦與氧化錫混合物CO還原反應(yīng)實驗研究知道,氧化銦與氧化錫CO還原法制備銦錫合金是可行的。ITO廢靶材CO還原實驗研究表明:在還原溫度為950℃,CO流量為40ml/min,還原時間為50min,粒度為200目以上時,產(chǎn)物銦錫合金中銦的含量為90.43%,錫的含量為9.5%;銦的還原率大于99%,錫的還原率大于98%。真空蒸餾多級冷凝實驗表明:在溫度1400 ℃,保溫1h,壓強為10～15 Pa的冷凝條件下,銦主要分布在中間3級至6級冷凝盤中,其中雜質(zhì)元素Cu、Cd、Fe、A1、Sn主要分布在1級和2級,Pb、T1主要分布在8級至10級冷凝盤,其中3級和4級冷凝盤中銦純度為99.9%,直收率為53.87%,5級和6級冷凝盤的銦純度為99.99%,直收率為36.7%,因此通過一次真空蒸餾多級冷凝,可產(chǎn)出99.9%～99.99%的精銦,直收率達到90.57%,雜質(zhì)可以達到4N銦的國家標準要求。綜上所述采用熱還原-真空蒸餾法處理ITO廢料,具有銦錫回收率高,能耗低,流程簡單,有利于環(huán)保等優(yōu)點。
[Abstract]:With the development of electronic information technology, ITO targets are mainly used to produce transparent electrodes for liquid crystal display screen. The indium used in ITO targets is 560t / year. The total consumption of indium is more than 80%. However, in the preparation of ITO thin films by ITO target magnetron sputtering, the utilization ratio of target is low, and a large number of side materials and cutting powder will be produced in the process of ITO target processing. The utilization ratio of ITO target is only 30%, and the content of indium in waste material is more than 80%. Therefore, it is of great significance to study the recovery of metal indium from the waste target of ITO. In this paper, the reduction of indium and tin from ITO waste by CO reduction-vacuum distillation method was studied. Firstly, the thermodynamic analysis and kinetic analysis of indium oxide and tin oxide by CO reduction were carried out. The temperature range of the reduction reaction and the possible control steps are obtained. The results of single factor experiment show that the optimum reaction condition is that the CO flow rate is 40 ml / min at 950 鈩，

本文編號：1431554