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基于MEMS的小型化圓時(shí)柵傳感器研究

發(fā)布時(shí)間:2019-03-25 20:22
【摘要】:隨著微電子產(chǎn)業(yè)的大力發(fā)展,傳感器逐漸朝著小型化、高精度方向發(fā)展,正是基于此,本文著重研究一種新型的小型化電場(chǎng)式圓時(shí)柵傳感器。電場(chǎng)式圓時(shí)柵傳感器利用正交變化的電場(chǎng)構(gòu)建運(yùn)動(dòng)參考系,直接用電場(chǎng)耦合的方式感應(yīng)電信號(hào),與傳統(tǒng)的時(shí)柵相比,減少了感應(yīng)信號(hào)產(chǎn)生的中間環(huán)節(jié),抗干擾能力更強(qiáng);采用MEMS微納加工工藝進(jìn)行極片加工,保證了傳感器的加工精度。電場(chǎng)式圓時(shí)柵是一種新型的電容式位移傳感器,結(jié)構(gòu)簡(jiǎn)單,功耗低,信號(hào)的采集和處理過(guò)程簡(jiǎn)單,利于傳感器的小型化和高度集成化。在傳感器小型化的同時(shí),也要提高傳感器的測(cè)量精度,因此,要采用理論分析、模型仿真和實(shí)驗(yàn)驗(yàn)證三者相結(jié)合的方式,逐步形成一套具有指導(dǎo)意義的電場(chǎng)式圓時(shí)柵傳感器理論。本文主要圍繞電場(chǎng)式圓時(shí)柵位移傳感器的結(jié)構(gòu)進(jìn)行優(yōu)化。主要的工作如下:1.闡述了時(shí)空坐標(biāo)轉(zhuǎn)換理論、機(jī)械式時(shí)柵原理和磁場(chǎng)式時(shí)柵原理,深入研究了電場(chǎng)式圓時(shí)柵傳感器雙列式結(jié)構(gòu)和單列式結(jié)構(gòu),并對(duì)它們各自的工作原理進(jìn)行了詳細(xì)闡述。2.以COMSOL Multiphysics多物理場(chǎng)仿真軟件為基礎(chǔ),首先對(duì)傳感器雙列式結(jié)構(gòu)進(jìn)行了仿真,明確了雙列式結(jié)構(gòu)內(nèi)外兩圈存在差異的原因,結(jié)合理論分析了這種差異會(huì)帶來(lái)二次誤差;為了消除這種差異,將傳感器的結(jié)構(gòu)優(yōu)化成單列式結(jié)構(gòu),并對(duì)單列式結(jié)構(gòu)進(jìn)行仿真分析,確定了小型化傳感器的結(jié)構(gòu)尺寸和對(duì)極數(shù),采用MEMS微納加工工藝對(duì)優(yōu)化后的傳感器進(jìn)行加工制造。3.根據(jù)實(shí)驗(yàn)要求,搭建實(shí)驗(yàn)平臺(tái),采用理論分析和仿真結(jié)果相結(jié)合的方式進(jìn)行了大量的實(shí)驗(yàn)驗(yàn)證,首先對(duì)傳感器由雙列結(jié)構(gòu)變單列結(jié)構(gòu)的優(yōu)化進(jìn)行了實(shí)驗(yàn)驗(yàn)證,然后根據(jù)單列結(jié)構(gòu)中實(shí)驗(yàn)誤差數(shù)據(jù)結(jié)合理論分析,找到誤差來(lái)源,并進(jìn)行了結(jié)構(gòu)優(yōu)化,分析了兩路駐波幅值不等、安裝傾斜、極片制造誤差等問(wèn)題會(huì)帶來(lái)二次誤差;激勵(lì)信號(hào)幅值不等、兩路駐波相位非嚴(yán)格正交會(huì)產(chǎn)生一次或二次誤差;傳感器三次和五次諧波會(huì)帶來(lái)四次誤差。通過(guò)大量的實(shí)驗(yàn)驗(yàn)證和誤差分析,不斷的對(duì)傳感器的結(jié)構(gòu)進(jìn)行優(yōu)化,實(shí)驗(yàn)結(jié)果表明,直徑為57mm的圓時(shí)柵傳感器最終的實(shí)驗(yàn)精度為±10″,分辨力為0.2″。
[Abstract]:With the development of microelectronics industry, the sensor is gradually developing towards miniaturization and high precision. Based on this, this paper focuses on the study of a new type of miniaturized electric field-type circular time-gate sensor. The electric field circular time gate sensor uses the orthogonal electric field to construct the moving reference frame and directly uses the electric field coupling way to induce the electric signal. Compared with the traditional time gate, the electric field circular time gate sensor reduces the intermediate link of the induction signal and has stronger anti-jamming ability. The MEMS micro / nano machining technology is used to process the electrode plate, which ensures the precision of the sensor. Electric field circular time gate is a new type capacitive displacement sensor with simple structure, low power consumption, simple signal acquisition and processing process, which is conducive to the miniaturization and high integration of the sensor. In addition to the miniaturization of the sensor, it is necessary to improve the measurement accuracy of the sensor. Therefore, the combination of theoretical analysis, model simulation and experimental verification should be adopted. Gradually form a set of guiding electric field type circular time gate sensor theory. In this paper, the structure of grid displacement sensor based on electric field circle is optimized. The main work is as follows: 1. The space-time coordinate transformation theory, mechanical time-gate principle and magnetic field-type time-gate principle are described. The double-row structure and single-row structure of electric field-type circular time-gate sensor are deeply studied, and their working principles are described in detail. 2. Based on the COMSOL Multiphysics multi-physical field simulation software, the double-row structure of the sensor is simulated firstly, and the reason of the difference between the inner and outer two cycles of the double-row structure is clarified, and the secondary error is analyzed in combination with the theory. In order to eliminate this difference, the structure of the sensor is optimized into a single-row structure, and the single-row structure is simulated and analyzed, and the structure size and the number of antipods of the miniaturized sensor are determined. Fabrication of optimized sensors by MEMS micro / nano process. 3. According to the experimental requirements, the experimental platform is set up, and a lot of experiments are carried out by combining theoretical analysis and simulation results. Firstly, the optimization of the sensor from double-row structure to single-row structure is verified by experiments. Then, according to the experimental error data and theoretical analysis in the single-row structure, the error source is found, and the structure optimization is carried out. The secondary error will be brought about by the two standing wave amplitude difference, installation tilt, pole manufacturing error and so on. When the amplitude of the excitation signal is different, the two standing wave phases are not strictly orthogonal to produce one or two errors, and the third and fifth harmonics of the sensor will bring about four times errors. Through a lot of experimental verification and error analysis, the structure of the sensor is continuously optimized. The experimental results show that the final experimental accuracy of the circular time gate sensor with diameter of 57mm is 鹵10 "and the resolution is 0.2".
【學(xué)位授予單位】:重慶理工大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2017
【分類(lèi)號(hào)】:TP212

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