Study on atomic layer etching of Si in inductively coupled A
發(fā)布時(shí)間：2023-07-30 17:35
Plasma atomic layer etching is proposed to attain layer-by-layer etching, as it has atomic-scale resolution, and can etch monolayer materials. In the etching process, ion energy and angular distributions(IEADs) bombarding the wafer placed on the substrate play a critical role in trench profile evolution, thus importantly flexibly controlling IEADs in the process. Tailored bias voltage waveform is an advisable method to modulate the IEADs effectively, and then improve the trench profile. In this ...
【文章頁(yè)數(shù)】：12 頁(yè)
【文章目錄】：
1. Introduction
2. Model descriptions
2.1. Reactor model
2.2. Sheath model
2.3. Trench model
3. Results and discussions
4. Conclusions
本文編號(hào)：3837880
【文章頁(yè)數(shù)】：12 頁(yè)
【文章目錄】：
1. Introduction
2. Model descriptions
2.1. Reactor model
2.2. Sheath model
2.3. Trench model
3. Results and discussions
4. Conclusions
本文編號(hào)：3837880
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