電磁超聲相控陣激勵(lì)源高頻隔離驅(qū)動(dòng)電路
發(fā)布時(shí)間：2018-09-11 13:37
【摘要】：為了進(jìn)一步提高電磁超聲相控陣激勵(lì)源的工作效率,基于半橋拓?fù)浞糯蠼Y(jié)構(gòu)提出了一種電磁超聲相控陣激勵(lì)源高頻隔離驅(qū)動(dòng)電路的設(shè)計(jì)方法.根據(jù)金屬氧化物半導(dǎo)體場效應(yīng)晶體管(metal oxide semiconductor field effect transistor,MOSFET)的簡化模型,分析了MOSFET在開通和關(guān)斷過程中的開關(guān)損耗,從而給出了高頻隔離驅(qū)動(dòng)電路所必須滿足的條件.通過采用光纖器件隔離脈沖信號(hào)和DC-DC隔離電源對參考電位進(jìn)行轉(zhuǎn)換,有效解決了驅(qū)動(dòng)電路的高頻"浮柵"問題,并利用RC微分電路和施密特反相器設(shè)計(jì)了驅(qū)動(dòng)信號(hào)死區(qū)時(shí)間可調(diào)電路.實(shí)驗(yàn)結(jié)果表明:設(shè)計(jì)的驅(qū)動(dòng)電路能夠輸出頻率為1.1 MHz、死區(qū)時(shí)間為0.32μs、驅(qū)動(dòng)電壓為18.8 V、占空比為26%的互補(bǔ)驅(qū)動(dòng)信號(hào),并且在驅(qū)動(dòng)MOSFET柵極的實(shí)際應(yīng)用中,有效降低了功率開關(guān)管的功率損耗.
[Abstract]:In order to further improve the working efficiency of electromagnetic ultrasonic phased array excitation source, a design method of high frequency isolation drive circuit for electromagnetic ultrasonic phased array excitation source is proposed based on half-bridge topology amplification structure. According to the simplified model of metal oxide semiconductor field effect transistor (metal oxide semiconductor field effect transistor,MOSFET), the switching loss of MOSFET in the process of turn-on and turn-off is analyzed, and the conditions which must be satisfied for the high-frequency isolation drive circuit are given. By using fiber optic device to isolate pulse signal and DC-DC isolation power source to convert reference potential, the problem of high frequency floating gate of driving circuit is effectively solved. The dead-time adjustable circuit of driving signal is designed by using RC differential circuit and Schmitt inverter. The experimental results show that the designed drive circuit can output complementary driving signals with a frequency of 1.1 MHz, dead time of 0.32 渭 s, driving voltage of 18.8V and duty cycle of 26%, and is used in the practical application of driving MOSFET gate. The power loss of the power switch is reduced effectively.
【作者單位】： 北京工業(yè)大學(xué)機(jī)械工程與應(yīng)用電子技術(shù)學(xué)院;
【基金】：北京市科學(xué)技術(shù)委員會(huì)首都科技條件平臺(tái)資助項(xiàng)目(Z141100003414001)
【分類號(hào)】：TB559;TM46;TN386
本文編號(hào)：2236841
[Abstract]:In order to further improve the working efficiency of electromagnetic ultrasonic phased array excitation source, a design method of high frequency isolation drive circuit for electromagnetic ultrasonic phased array excitation source is proposed based on half-bridge topology amplification structure. According to the simplified model of metal oxide semiconductor field effect transistor (metal oxide semiconductor field effect transistor,MOSFET), the switching loss of MOSFET in the process of turn-on and turn-off is analyzed, and the conditions which must be satisfied for the high-frequency isolation drive circuit are given. By using fiber optic device to isolate pulse signal and DC-DC isolation power source to convert reference potential, the problem of high frequency floating gate of driving circuit is effectively solved. The dead-time adjustable circuit of driving signal is designed by using RC differential circuit and Schmitt inverter. The experimental results show that the designed drive circuit can output complementary driving signals with a frequency of 1.1 MHz, dead time of 0.32 渭 s, driving voltage of 18.8V and duty cycle of 26%, and is used in the practical application of driving MOSFET gate. The power loss of the power switch is reduced effectively.
【作者單位】： 北京工業(yè)大學(xué)機(jī)械工程與應(yīng)用電子技術(shù)學(xué)院;
【基金】：北京市科學(xué)技術(shù)委員會(huì)首都科技條件平臺(tái)資助項(xiàng)目(Z141100003414001)
【分類號(hào)】：TB559;TM46;TN386
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