發(fā)布時(shí)間：2018-06-28 08:20

  本文選題：a-C + H薄膜�。� 參考：《原子能科學(xué)技術(shù)》2017年04期

【摘要】：采用等離子體增強(qiáng)化學(xué)氣相沉積(PECVD)方法在Si(111)基底上制備a-C:H薄膜,利用原子力顯微鏡(AFM)和掃描電子顯微鏡(SEM)對(duì)a-C:H薄膜的表面形貌與表面粗糙度進(jìn)行表征,并從動(dòng)力學(xué)標(biāo)度法角度出發(fā)討論a-C:H薄膜表面粗糙度的演變機(jī)理。研究結(jié)果表明:a-C:H薄膜表面微觀形貌為自仿射分形表面,可用分形維數(shù)來(lái)評(píng)價(jià)薄膜的表面粗糙度;隨著H_2流量的增加,薄膜表面粗糙度先減小后增大,在T_2B與H_2流量比為0.2/6時(shí),a-C:H薄膜的表面粗糙度R_q為2.2nm,相對(duì)于其他條件下生長(zhǎng)的薄膜的表面粗糙度低,薄膜表面較光滑,致密性良好。
[Abstract]:A-C: h thin films were prepared on Si (111) substrates by plasma enhanced chemical vapor deposition (PECVD). The surface morphology and surface roughness of a-C: h films were characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The evolution mechanism of the surface roughness of a-C: h thin films is discussed from the point of view of dynamic scaling method. The results show that the micro-morphology of the thin film is a self-affine fractal surface, the surface roughness of the thin film can be evaluated by fractal dimension, and the surface roughness decreases first and then increases with the increase of H _ 2 flux. When the flow ratio of T _ 2B to H _ 2O _ 2 is 0.2 / 6, the surface roughness RQ of the thin film is 2.2 nm, which is lower than that of the thin film grown under other conditions. The surface of the thin film is smooth and compact.
【作者單位】： 中國(guó)工程物理研究院激光聚變研究中心;
【分類號(hào)】：O484
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本文編號(hào)：2077345