本文選題：薄膜 + 柔性薄膜晶體管��； 參考：《光學(xué)學(xué)報(bào)》2017年03期

【摘要】：在室溫環(huán)境下采用射頻磁控濺射方法制備了氧化鋁(A_l2O_3)薄膜,通過調(diào)節(jié)濺射氣壓實(shí)現(xiàn)了對(duì)薄膜特性的優(yōu)化控制。當(dāng)濺射功率為120 W、Ar氣壓強(qiáng)為0.13Pa時(shí),制備的A_l2O_3薄膜具有最好的厚度均勻性,薄膜中Al和O的原子比為1∶1.67,密度為3.21g/cm~3,粗糙度為0.62nm。這種平滑、致密的薄膜結(jié)構(gòu)能夠有效地減少缺陷的形成,獲得高擊穿電壓、高相對(duì)介電常數(shù)和低漏電等性能。利用優(yōu)化后的A_l2O_3薄膜作為柵極絕緣層,在聚酰亞胺樹脂(PI)基板上室溫制備了柔性非晶態(tài)銦鎵鋅氧化物-薄膜晶體管(α-IGZO-TFT),其遷移率為2.19cm2/(V·s),開關(guān)比達(dá)到105,亞閾值擺幅為0.366V/decade,閾值電壓為3.01V。
[Abstract]:Al _ 2O _ 3) thin films were prepared by RF magnetron sputtering at room temperature. The optimal control of the film characteristics was achieved by adjusting the sputtering pressure. When the sputtering power is 120W / ar and the pressure is 0.13Pa, the prepared A_l2O_3 thin films have the best thickness uniformity. The atomic ratio of Al and O in the films is 1: 1.67, the density is 3.21g / cm ~ (-1), and the roughness is 0.62nm. This smooth, compact film structure can effectively reduce the formation of defects and obtain high breakdown voltage, high relative dielectric constant and low leakage. A amorphous indium gallium zinc oxide thin-film transistor (偽 -IGZO-TFTT) was prepared on polyimide resin (Pi) substrate at room temperature by using the optimized A_l2O_3 film as the gate insulating layer. Its mobility is 2.19cm2/(V sn, the switching ratio is 105, the sub-threshold swing is 0.366V / decadeand the threshold voltage is 3.01V.
【作者單位】： 華南理工大學(xué)材料科學(xué)與工程學(xué)院高分子光電材料與器件研究所發(fā)光材料與器件國(guó)家重點(diǎn)實(shí)驗(yàn)室;
【基金】：國(guó)家重點(diǎn)研發(fā)計(jì)劃(2016YFB0401504,2016YFF0203603) 國(guó)家973計(jì)劃(2015CB655004) 廣東省自然科學(xué)基金資助項(xiàng)目(2016A030313459) 廣東省科技計(jì)劃(2014B090915004,2016B090907001) 中央高校基本科研業(yè)務(wù)費(fèi)專項(xiàng)資金(2015ZP024,2015ZZ063) 發(fā)光學(xué)及應(yīng)用國(guó)家重點(diǎn)實(shí)驗(yàn)室開放基金(SKLA-2016-11)
【分類號(hào)】：O484;TN321.5
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本文編號(hào)：1811956