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高低溫條件下氟化鋰材料的離子激發(fā)發(fā)光光譜分析

發(fā)布時間:2018-03-19 21:44

  本文選題:離子激發(fā)發(fā)光 切入點:高低溫 出處:《物理學(xué)報》2017年20期  論文類型:期刊論文


【摘要】:在北京師范大學(xué)GIC4117串列加速器原有離子激發(fā)發(fā)光(ion beam induced luminescence,IBIL)分析靶室基礎(chǔ)上,安裝了可實現(xiàn)80—900 K溫度范圍內(nèi)精確控溫的冷熱樣品臺,實現(xiàn)高低溫條件下IBIL光譜的測量.添加金硅面壘探測器,在離子輻照材料樣品過程中同步采集背散射離子的計數(shù),實現(xiàn)束流的在線監(jiān)測.在不同溫度下,利用2 MeV H~+束轟擊氟化鋰樣品,獲得的IBIL光譜中可明顯觀察到溫度對不同發(fā)光中心發(fā)光效果的影響:激子峰和雜質(zhì)峰發(fā)光在低溫條件下更為清晰;高溫時各類型F色心的發(fā)光強度在較小的注量下即可達(dá)到飽和值或開始衰減.輻照初期受擾激子峰(296 nm)發(fā)光強度的上升過程表明不能排除受擾激子峰與點缺陷發(fā)光中心相關(guān)的可能性,激子峰強度的上升源自低注量時核彈性碰撞產(chǎn)生的應(yīng)變鍵;溫度對空位遷徙速率及非輻射復(fù)合的影響是造成發(fā)光強度隨注量演變差異的重要原因.
[Abstract]:On the basis of the original ion-excited beam induced luminescence chamber of the GIC4117 tandem accelerator of Beijing normal University, a cold and hot sample table with accurate temperature control in the temperature range of 80-900K has been installed. The measurement of IBIL spectrum at high and low temperature is realized. The counting of backscattered ions is collected synchronously in the process of ion irradiating material samples with the addition of au Si surface barrier detector to realize the on-line monitoring of beam current. The effect of temperature on the luminescence of different luminescence centers can be observed in the IBIL spectra obtained by bombarding lithium fluoride with 2 MeV H- beam. The exciton peak and impurity peak are clearer at low temperature. At high temperature, the luminescence intensity of each type of F color center can reach saturation value or begin to attenuate at a relatively small flux. The rising process of the luminescence intensity of the perturbed exciton peak at the beginning of irradiation indicates that the disturbing exciton peak and the point defect can not be excluded. The possibilities associated with the center of light, The rise of exciton peak intensity originates from the strain bond produced by nuclear elastic collision at low flux, and the influence of temperature on vacancy migration rate and non-radiative recombination is an important reason for the variation of luminescence intensity with the flux.
【作者單位】: 北京師范大學(xué)核科學(xué)與技術(shù)學(xué)院;北京市輻射中心;
【分類號】:O433.4

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