本文選題：激光等離子體　切入點：自相似膨脹　出處：《華中師范大學(xué)學(xué)報(自然科學(xué)版)》2017年02期 　論文類型：期刊論文

【摘要】：基于Navier-Stokes方程的自相似解,研究了最小質(zhì)量限制液滴Sn靶激光等離子高能離子的時空分布特性,并將該結(jié)果應(yīng)用于高能離子碎屑刻蝕導(dǎo)致的極紫外光刻(EUVL)光源收集鏡壽命的評估.對于不同的絕熱膨脹指數(shù)γ=1.67、1.3和1.1,數(shù)值計算了激光等離子體平均電離度、等離子體羽輝尺寸、羽輝膨脹速率和離子動能隨時間的演化,并得到了高能Sn離子碎屑通量的角分布及其轟擊濺射Ru、Mo和Si膜的濺射產(chǎn)額及濺射刻蝕速率.研究發(fā)現(xiàn),激光液滴靶等離子體中的高能Sn離子對Mo,Si多層膜的濺射刻蝕率的角分布滿足cos3θ的關(guān)系.對EUVL光源而言,為了延長EUV收集鏡壽命,降低激光等離子體電離度和采用最小質(zhì)量限制液滴Sn靶是一條有效的途徑.
[Abstract]:Based on the self-similar solution of Navier-Stokes equation, the space-time distribution characteristics of laser plasma high-energy ions in the minimum mass limited liquid droplet Sn target are studied. The results are applied to the estimation of the lifetime of the very ultraviolet photoetching EUVLL light source caused by high energy ion chip etching. For different adiabatic thermal expansion exponents 緯 1. 67 1. 3 and 1. 1, the average ionization degree of laser plasma and the size of plasma plume are numerically calculated. The angular distribution of high-energy Sn ion clastic flux, the sputtering yield and the sputtering etching rate of Ru-Mo and Si films deposited by bombardment have been obtained, and it is found that the angular distribution of the angular flux and the sputtering etching rate of the high-energy Sn ion clastic flux have been obtained by the evolution of the plume expansion rate and ion kinetic energy with time. The angular distribution of the sputtering etching rate of Mo-Si multilayer films by high energy Sn ions in laser droplet target plasma conforms to the relationship of cos3 胃. For EUVL light source, in order to prolong the lifetime of EUV collecting mirror, It is an effective way to reduce the ionization degree of laser plasma and to adopt the minimum mass limited liquid droplet Sn target.
【作者單位】： 武漢工程大學(xué)理學(xué)院;
【基金】：國家自然科學(xué)基金項目(11304235) 武漢工程大學(xué)校長基金項目(2014067);武漢工程大學(xué)科學(xué)研究基金項目(K201310)
【分類號】：O539
，

本文編號：1636489