本文關(guān)鍵詞：基于復(fù)合結(jié)構(gòu)的氣體電子倍增器增益模擬和實(shí)驗(yàn)研究　出處：《物理學(xué)報(bào)》2017年14期 　論文類型：期刊論文

  更多相關(guān)文章： 氣體電子倍增器 微網(wǎng)結(jié)構(gòu)氣體探測器 增益

【摘要】：氣體電子倍增器(GEM)作為高性能的微結(jié)構(gòu)氣體探測器在高能物理相關(guān)領(lǐng)域內(nèi)得到了廣泛的研究和應(yīng)用.其中增益是GEM探測器基本性能研究中的一個(gè)重要參數(shù),該值的精確測量至關(guān)重要.增益的測量一般采用電流測量或者能譜測量方法,但均存在精度較低或者過程繁瑣的問題,且無法精確測量低增益值.針對GEM探測器增益的精確測量,本文提出了一種由GEM探測器與微網(wǎng)結(jié)構(gòu)氣體探測器(MM)級聯(lián)構(gòu)成的復(fù)合結(jié)構(gòu)探測器(GEM-MM).利用GEM-MM結(jié)構(gòu)以相對方法實(shí)現(xiàn)GEM增益的精確測量.該方法既可以省去傳統(tǒng)方法中復(fù)雜的電子學(xué)標(biāo)定過程,同時(shí)不需要進(jìn)行原初電離電子數(shù)的估算,保證了增益的精確測量,并且可以實(shí)現(xiàn)GEM低增益的測量.基于GEM-MM測量GEM增益的原理,本文首先對GEM-MM電荷輸運(yùn)過程進(jìn)行了模擬研究,優(yōu)化了合適的工作電壓.比較了三種不同類型和配比工作氣體下GEM增益模擬結(jié)果,并在Ar/iC_4H_(10)(95/5)氣體中測量了單層GEM在3—24范圍內(nèi)的有效增益.不同Penning系數(shù)下GEM增益的模擬結(jié)果表明,Penning系數(shù)為0.32時(shí)GEM增益的模擬結(jié)果與實(shí)驗(yàn)測量結(jié)果符合得很好.由此可以確定一個(gè)大氣壓下的Ar/iC_4H_(10)(95/5)氣體中,Penning系數(shù)為0.32±0.01.
[Abstract]:Gas electron multiplier. As a high performance microstructured gas detector, it has been widely studied and applied in the field of high energy physics, in which gain is an important parameter in the basic performance research of GEM detector. The accurate measurement of this value is very important. The gain measurement usually adopts current measurement or energy spectrum measurement method, but there are some problems such as low precision or tedious process. And can not accurately measure the low gain value. For the GEM detector gain accurate measurement. In this paper, a composite structure detector composed of GEM detector and gas detector with microgrid structure is presented. Using GEM-MM structure to realize accurate measurement of GEM gain by relative method, this method can not only eliminate the complicated electronic calibration process in traditional methods. At the same time, there is no need to estimate the number of primary ionization electrons, which ensures the accurate measurement of gain, and can realize the low gain measurement of GEM. The principle of GEM gain measurement based on GEM-MM. In this paper, the charge transport process of GEM-MM is simulated and the suitable working voltage is optimized. The results of GEM gain simulation under three different types and ratios of working gases are compared. And in Ars / iC4hs / 10 / 95 / 5). The effective gain of monolayer GEM in the range of 3-24 has been measured in the gas. The simulation results of the GEM gain at different Penning coefficients show that the gain of the monolayer GEM is improved. The simulation results of GEM gain at 0.32 Penning coefficient are in good agreement with the experimental results, which can be used to determine the ar / iC4HSP / 95 / 5 at one atmospheric pressure. In the gas. The Penning coefficient is 0.32 鹵0.01.
【作者單位】： 蘭州大學(xué)核科學(xué)與技術(shù)學(xué)院;核探測與核電子學(xué)國家重點(diǎn)實(shí)驗(yàn)室;中國科學(xué)院高能物理研究所;中國科學(xué)院大學(xué);
【基金】：國家重點(diǎn)研發(fā)計(jì)劃“大科學(xué)裝置前沿研究”重點(diǎn)專項(xiàng)(批準(zhǔn)號:2016YFA0400400) 國家自然科學(xué)基金(批準(zhǔn)號:11675197) 中國科學(xué)院高能物理研究所創(chuàng)新基金資助的課題~~
【分類號】：O572.21
【正文快照】： xf口 氣體電子倍X椘，

本文編號：1438791