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納米孔及納流道中離子輸運(yùn)特性的研究

發(fā)布時(shí)間:2018-05-08 07:05

  本文選題:納流體器件 + 動(dòng)電效應(yīng); 參考:《浙江大學(xué)》2017年碩士論文


【摘要】:納流體器件是指關(guān)鍵尺寸小于或等于100nm的流體器件,主要包括納米孔結(jié)構(gòu)和納流道結(jié)構(gòu),在生物測(cè)序、水處理等方面有廣闊的應(yīng)用前景。由于納流體器件中存在流場(chǎng)-電場(chǎng)-離子運(yùn)動(dòng)等多物理場(chǎng)的耦合,又因尺寸減小到納米級(jí)別,因此其中的物理現(xiàn)象非常復(fù)雜,并且通常伴隨有強(qiáng)烈的非線性。這種非線性特性是納流體器件固有存在的,其引發(fā)機(jī)制目前仍缺乏確定、一致的解釋。本文通過(guò)數(shù)值仿真和數(shù)學(xué)分析,探究了弱電雙層重合(Weak EDL overlap)機(jī)制下納流道器件中離子的傳輸特性,從電滲流(EOF)和離子反轉(zhuǎn)的角度對(duì)器件的非線性Ⅰ-Ⅴ特性做出了解釋。此外,還制備了納米孔器件,并對(duì)其電學(xué)特性進(jìn)行了測(cè)量。本論文的主要研究?jī)?nèi)容和結(jié)論如下:(1)搭建了納流道器件仿真模型。利用Poisson-Nernst-Planck(PNP)方程和Poisson-Nernst-Planck-Stokes(PNP-S)方程模擬其輸運(yùn)情況。(2)揭示了 EOF對(duì)在中等電壓強(qiáng)度下對(duì)離子電導(dǎo)的抑制效應(yīng)。利用PROPHET軟件仿真流體對(duì)輸運(yùn)過(guò)程的影響,并用COMSOL Multiphysics軟件進(jìn)行驗(yàn)證,輔以一維數(shù)學(xué)模型分析,得出了 EOF驅(qū)動(dòng)離子耗盡區(qū)進(jìn)入溝道,并抑制溝道內(nèi)電導(dǎo)的結(jié)論。同時(shí),提出了不同于傳統(tǒng)極限電流概念的極限電導(dǎo)行為。(3)驗(yàn)證了高電壓強(qiáng)度下離子屏蔽電荷反轉(zhuǎn)效應(yīng)并揭示其與渦旋產(chǎn)生的關(guān)系。通過(guò)COMSOL Multiphysics軟件和數(shù)學(xué)模型分析,闡述了高電壓下離子屏蔽電荷會(huì)發(fā)生局部反轉(zhuǎn)這一效應(yīng),并從體積力扭矩的角度解釋了渦旋的產(chǎn)生原因。結(jié)合第二章內(nèi)容,對(duì)納流體器件的非線性特性做出了解釋。(4)制備納米孔器件并進(jìn)行電學(xué)測(cè)量。利用FIB和TEM技術(shù)制備尺寸精確可控的納米孔,利用ALD工藝進(jìn)行孔徑處理;搭建納米孔器件電測(cè)量系統(tǒng),并完成了初步的電學(xué)測(cè)量。
[Abstract]:Nano-fluid devices are fluid devices whose key size is less than or equal to 100nm, mainly including nano-pore structure and nanorods structure, which has a broad application prospect in biological sequencing, water treatment and so on. Due to the coupling of flow field, electric field and ion motion in nanoscale fluid devices, and because the size is reduced to nanometer level, the physical phenomena are very complicated and usually accompanied by strong nonlinearity. This nonlinear characteristic is inherent in nanofluid devices, and its initiation mechanism is still lack of definite and consistent explanation. By means of numerical simulation and mathematical analysis, the characteristics of ion transport in nanofilm devices under the weak electric double-layer coincidence EDL overlap-mechanism are investigated. The nonlinear 鈪,

本文編號(hào):1860437

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