【摘要】：隨著微電子技術(shù)的快速發(fā)展,銅內(nèi)連導(dǎo)線的失效問(wèn)題日益受到關(guān)注.基于表面擴(kuò)散和蒸發(fā)—凝結(jié)的經(jīng)典理論及其弱解描述,建立描述電遷移下微結(jié)構(gòu)演化的有限單元法,對(duì)銅材料內(nèi)沿晶微裂紋在電遷移誘發(fā)表面擴(kuò)散下的不穩(wěn)定外形演化進(jìn)行了有限元模擬.詳細(xì)討論了電場(chǎng)、形態(tài)比和晶界能與表面能比值對(duì)沿晶微裂紋演化的影響.結(jié)果表明:沿晶微裂紋在沿著晶界和電場(chǎng)方向發(fā)生漂移的過(guò)程中存在分節(jié)與不分節(jié)兩種形貌演化分叉趨勢(shì),且裂腔分節(jié)存在臨界形態(tài)比βc和臨界電場(chǎng)值χc.當(dāng)β≥βc或χ≥χc時(shí),沿晶微裂紋會(huì)沿著晶界分節(jié)成一大一小兩個(gè)小沿晶微裂紋.沿晶微裂紋分節(jié)時(shí)間隨形態(tài)比和電場(chǎng)的增大而減小,即形態(tài)比和電場(chǎng)的增大都使沿晶微裂紋加速分節(jié).而臨界電場(chǎng)值χc隨著形態(tài)比的增大而減小;臨界形態(tài)比βc隨電場(chǎng)的增大而減小.也就是說(shuō)形態(tài)比和電場(chǎng)的增大還將有助于沿晶微裂紋分節(jié).此外,沿晶微裂紋分節(jié)時(shí)間要比晶內(nèi)微裂紋的小,即晶界的存在有助于加速裂腔分節(jié).
[Abstract]:With the rapid development of microelectronic technology, the failure of copper internal conductor has been paid more and more attention. Based on the classical theory of surface diffusion and evaporation-condensation and its weak solution description, a finite element method for describing the evolution of microstructure under electromigration is established. The unstable shape evolution of intergranular microcracks induced by electromigration was simulated by finite element method. The effects of electric field, morphology ratio and the ratio of grain boundary energy to surface energy on the evolution of intergranular microcracks are discussed in detail. The results show that the intergranular microcracks drift along the grain boundary and the electric field, and there are two morphologies evolution and bifurcation trends, the critical morphology ratio (尾 c) and the critical electric field value (蠂 c). When 尾 鈮，

本文編號(hào)：2370990