【摘要】：SiC單晶具有優(yōu)良的物理和機(jī)械性能,在微電子和光電領(lǐng)域得到了廣泛應(yīng)用,然而由于其高硬度和脆性,晶片的制造非常困難、效率低下。為提高SiC單晶片的加工質(zhì)量和加工效率,分析了SiC單晶片線鋸切割過程中的受力情況;從切屑變形和摩擦兩個方面,建立單顆磨粒的法向和切向受力模型,進(jìn)而得到線鋸切割力與工藝參數(shù)及線鋸物理屬性的關(guān)系模型;設(shè)計(jì)了切割力的試驗(yàn)裝置,通過不同加工參數(shù)下的試驗(yàn)研究,確定了關(guān)系模型中的應(yīng)力系數(shù);通過理論值與試驗(yàn)值的對比校驗(yàn),法向力和切向力預(yù)測值的誤差小于9.18%,并對誤差產(chǎn)生原因作了分析。結(jié)果表明,該切割力理論模型可以對SiC單晶片在同等線鋸切割環(huán)境下的切割力進(jìn)行有效預(yù)測,為切削力的優(yōu)化控制提供了理論依據(jù)。
[Abstract]:Sic single crystals have been widely used in the fields of microelectronics and optoelectronic because of their excellent physical and mechanical properties. However, because of their high hardness and brittleness, the fabrication of sic wafers is very difficult and inefficient. In order to improve the machining quality and machining efficiency of sic single crystal chip, the stress situation during the cutting process of sic single crystal chip wire saw was analyzed, and the normal and tangential stress models of single abrasive grain were established from two aspects of chip deformation and friction. Then the relationship model of cutting force with process parameters and physical properties of wire saw is obtained, and the test device of cutting force is designed, and the stress coefficient in the model is determined by the experimental research under different machining parameters. The error of normal force and tangential force prediction value is less than 9.18 by comparing the theoretical value with the experimental value, and the cause of error is analyzed. The results show that the cutting force of sic single crystal chip under the same cutting environment can be effectively predicted by the theoretical model, which provides a theoretical basis for optimal control of cutting force.
【作者單位】： 西安理工大學(xué)機(jī)械與精密儀器工程學(xué)院;
【基金】：國家自然科學(xué)基金(51175420,61402361) 陜西省自然科學(xué)基礎(chǔ)研究計(jì)劃(2012JQ9005) 陜西省重點(diǎn)實(shí)驗(yàn)室基金(11JS074) 陜西省教育廳專項(xiàng)科研計(jì)劃(14JK1529)資助項(xiàng)目
【分類號】：TG48;TN304.24

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本文編號：2128975