AZ51鎂合金交流微弧氧化膜層厚度的研究
發(fā)布時(shí)間:2018-06-23 14:10
本文選題:AZ鎂合金 + 交流微弧氧化 ; 參考:《材料科學(xué)與工藝》2015年05期
【摘要】:在氫氧化鉀和氟化鉀組成的電解液中,采用交流微弧氧化處理技術(shù)對(duì)AZ51鎂合金進(jìn)行表面處理.研究了處理參數(shù)對(duì)陶瓷氧化膜層厚度的影響,確定了膜層的組織構(gòu)成.結(jié)果表明:KOH濃度在300~400 g/L時(shí),膜層厚度幾乎隨著KOH濃度的增加呈線性增長(zhǎng);KF濃度在400~1 000 g/L,膜層厚度增加最快;電壓處于50~80 V時(shí),能夠促進(jìn)膜層的快速生長(zhǎng);當(dāng)電解液溫度在20~70℃,隨著電解液溫度的升高,膜層厚度逐漸增加;膜層厚度隨處理時(shí)間延長(zhǎng)快速增長(zhǎng),超過100 s后趨于平緩.膜層主要由氟化鎂和氧化鎂組成,致密膜層的最大平均厚度約為30μm,膜層厚度超過30μm后,膜層將出現(xiàn)"沙化層".
[Abstract]:The surface of AZ51 magnesium alloy was treated by AC microarc oxidation in electrolyte composed of potassium hydroxide and potassium fluoride. The effect of treatment parameters on the thickness of ceramic oxide film was studied and the microstructure of the coating was determined. The results show that when the concentration of Koh is 300 ~ 400 g / L, the thickness of the film increases linearly with the increase of Koh concentration, and the KF concentration increases linearly at 400 ~ 1 000 g / L, the thickness of the film increases fastest when the voltage is 50 ~ 80 V, and the electrolyte temperature is 2070 鈩,
本文編號(hào):2057383
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