本文選題：晶格畸變 + 電導(dǎo)率��； 參考：《稀有金屬材料與工程》2015年11期

【摘要】：通過電導(dǎo)率測量、金相觀察、掃描電鏡分析和X射線衍射分析,研究了Si含量、Cu含量和熱處理工藝對Al-Si系鑄造合金晶格常數(shù)和電性能的影響規(guī)律。結(jié)果表明:Si和Cu元素的添加會減小合金的電導(dǎo)率;當(dāng)Si含量超過固溶極限后,Si含量的變化對晶格畸變程度影響不大,合金的電導(dǎo)率受Si相的體積百分?jǐn)?shù)控制;而Cu在固溶極限內(nèi)時,隨其含量的增加,晶格畸變程度增大,合金的電導(dǎo)率可根據(jù)鋁基體晶格常數(shù)的偏離量來評估;經(jīng)過450℃,5 h+250,2 h熱處理工藝,晶格畸變程度明顯降低,合金的電導(dǎo)率有明顯提高,增幅最高可達(dá)32%。
[Abstract]:The effects of Si content, Cu content and heat treatment process on the lattice constants and electrical properties of Al-Si cast alloys were studied by means of electrical conductivity measurement, metallographic observation, scanning electron microscopy and X-ray diffraction analysis. The results show that the addition of% Si and Cu elements can decrease the electrical conductivity of the alloy, and the variation of Si content has little effect on the lattice distortion when the Si content exceeds the solution limit, and the conductivity of the alloy is controlled by the volume percentage of Si phase. However, when Cu is within the solution limit, the degree of lattice distortion increases with the increase of the content of Cu, the conductivity of the alloy can be evaluated according to the deviation of the lattice constant of the aluminum matrix, and the degree of lattice distortion decreases obviously after heat treatment at 450 鈩，

本文編號：2057325