鎂合金化學機械拋光及材料去除機理研究
本文選題:化學機械拋光(CMP) + 鎂合金; 參考:《江南大學》2015年碩士論文
【摘要】:鎂合金所表現(xiàn)出的輕質、高阻尼性、抗振、高導熱性、抗電磁干擾、高電負性和易于回收等性能優(yōu)勢能很好的擴大鎂合金在工業(yè)上的應用。良好的機械性能,使得鎂合金在航天、航空以及3C等領域得到了廣泛的應用。但是鎂合金硬度低、軟的特性會導致其在加工中表面很容易出現(xiàn)劃傷、磨損。尤其在某些關鍵或非常重要的精密零部件加工中常常需要達到高精度且無缺陷的表面效果,而化學機械拋光技術(Chemical Mechanical Polishing,CMP)作為一種超精密的表面處理技術,能夠很好的實現(xiàn)超大平面的全局平坦化加工,達到近乎完美的鏡面效果。本文旨在采用理論與試驗相結合的方法,完成對鎂合金化學機械拋光中拋光液、拋光工藝參數(shù)以及材料去除機理的深入研究。首先,本論文對拋光介質在鎂合金化學機械拋光中的作用進行研究。結合鎂合金自身特有理化性質,主要研究有機溶劑和無機溶劑作為拋光介質對鎂合金拋光效果的影響。以表面粗糙度和材料去除率為評測標準發(fā)現(xiàn):?有機溶劑作為拋光介質,雖然能夠較好的改善鎂合金表面拋光質量且表面點蝕現(xiàn)象較少,但對鎂合金的材料去除率低;?以去離子水并添加適量緩蝕劑作為拋光介質,不僅能夠很好的改善表面拋光質量(幾乎沒有點蝕出現(xiàn)),并且能夠保證材料去除率適中。其次,本論文通過靜態(tài)(鎂合金靜置于拋光液中)和動態(tài)(鎂合金在拋光過程中)試驗,分別研究了拋光液中不同緩蝕劑對鎂合金基片表面耐腐蝕性以及拋光效果的影響。通過電化學試驗以及鎂合金表面膜層分析,得出緩釋效果及其緩蝕機理,結合拋光試驗比較得出最佳緩蝕劑及其含量。試驗研究結果表明:采用Na2HPO4作為緩蝕劑,當添加量為1wt%時,緩蝕效果最佳且拋光后鎂合金表面質量最好,無點蝕現(xiàn)象產生,充分證明了適量緩蝕劑能夠有效地改善鎂合金表面拋光質量。再者,本論文通過大量試驗對影響鎂合金化學機械拋光的主要參數(shù)進行了優(yōu)化試驗研究;诨瘜W機械拋光中的機械與化學作用并在本試驗條件下,研究了拋光工藝參數(shù)(拋光壓力、拋光盤轉速、拋光液流量、拋光時間)、p H調節(jié)劑(無機堿、有機堿)、磨料種類以及磨料濃度對鎂合金拋光效果的影響規(guī)律,以正交試驗選出最佳工藝參數(shù),并采用單因素試驗進行了拋光液的配方優(yōu)化。最終在本試驗條件下,得到最佳的拋光工藝參數(shù)以及性能良好的鎂合金化學機械拋光液。進一步研究了機械作用、化學作用以及化學與機械交互作用三者對鎂合金材料去除的影響,并結合化學機械拋光中材料去除機理的二體和三體接觸滑移模型,對其材料去除機理進行分析。研究結果表明:磨粒的機械作用是鎂合金在化學機械拋光中材料去除的主要因素,且磨粒與拋光液的化學機械交互作用能夠大幅度提高鎂合金在化學機械拋光過程中的材料去除率。
[Abstract]:Magnesium alloys have the advantages of light quality, high damping, anti vibration, high thermal conductivity, anti electromagnetic interference, high electronegativity and easy recovery, which can greatly expand the application of magnesium alloys in industry. Good mechanical properties make magnesium alloys widely used in the fields of aerospace, aviation and 3C. However, the hardness of magnesium alloys is low and soft. Characteristics can lead to easy scratching and abrasion on the surface of the processing, especially in the processing of some key or very important precision parts, which often require high precision and non defective surface effects. The chemical mechanical polishing (Chemical Mechanical Polishing, CMP) can be used as a super precision surface treatment technology. The aim of this paper is to complete the study of polishing liquid, polishing process parameters and material removal mechanism in chemical mechanical polishing of magnesium alloy. First, the polishing medium is in chemical machinery of magnesium alloy. Combined with the special physical properties of magnesium alloy, the effect of organic solvent and inorganic solvent on the polishing effect of magnesium alloy was mainly studied by organic solvent and inorganic solvent. The surface roughness and material removal rate were found as the evaluation criteria: organic solvent was used as polishing agent, although it could improve the surface polishing of magnesium alloy. Light mass and surface pitting are less, but the material removal rate of magnesium alloys is low. Using deionized water and adding a proper amount of corrosion inhibitor as polishing medium, the surface polishing quality is improved (almost no pitting), and the material removal rate is suitable. Secondly, this paper is static (magnesium alloy static in polishing). The effect of different inhibitors on the corrosion resistance and polishing effect of magnesium alloy substrate on the surface of magnesium alloy was studied. The effect of slow release and corrosion inhibition was obtained by the electrochemical test and the analysis of the surface film layer of magnesium alloy. The best corrosion inhibitor was obtained by comparing with the polishing test. The test results show that Na2HPO4 is used as a corrosion inhibitor and when the addition of 1wt% is the best corrosion inhibition effect and the surface quality of magnesium alloy after polishing is the best, no pitting phenomenon is produced. It is proved that a proper amount of corrosion inhibitor can effectively improve the surface polishing quality of magnesium alloy. Furthermore, this paper has influenced magnesium alloy by a large number of experiments. The main parameters of chemical mechanical polishing were optimized. Based on the mechanical and chemical effects of chemical mechanical polishing, the polishing process parameters (polishing pressure, rotating speed of discs, flow of polishing liquid, polishing time), P H regulator (inorganic alkali, organic base), type of abrasive and the concentration of abrasive to magnesium were studied. The best process parameters were selected by orthogonal test, and the formulation of the polishing liquid was optimized by single factor test. The optimum polishing process parameters and chemical mechanical polishing liquid of magnesium alloy were obtained under the test conditions. The mechanical, chemical and chemical effects were studied further. The effect of the interaction of three on the removal of magnesium alloy material and the material removal mechanism of the material removal mechanism in chemical mechanical polishing is combined with the two body and the three body contact slip model. The mechanism of the material removal is analyzed. The results show that the mechanical effect of the abrasive particles is the main factor of the material removal in the chemical machinery polishing. The chemical mechanical interaction of the polishing solution can greatly improve the material removal rate of the magnesium alloy during the chemical mechanical polishing process.
【學位授予單位】:江南大學
【學位級別】:碩士
【學位授予年份】:2015
【分類號】:TG174.4;TG146.22
【參考文獻】
相關期刊論文 前9條
1 蘇建修,康仁科,郭東明;超大規(guī)模集成電路制造中硅片化學機械拋光技術分析[J];半導體技術;2003年10期
2 劉利賓;劉玉嶺;王勝利;林娜娜;楊立兵;;硬盤基板化學機械粗拋光的實驗研究[J];半導體技術;2011年12期
3 武曉玲;劉玉嶺;賈英茜;鮑云英;;CLBO晶體化學機械拋光技術的研究[J];微納電子技術;2006年10期
4 陳景;劉玉嶺;王曉云;王立發(fā);馬振國;武亞紅;;鎂合金拋光機理與CMP工藝研究[J];微納電子技術;2008年02期
5 何捍衛(wèi),胡岳華,周科朝,熊翔;銅在甲胺鐵氰化鉀化學機械拋光液中的腐蝕與鈍化[J];功能材料;2004年03期
6 宋曉嵐;李宇q;江楠;屈一新;邱冠周;;化學機械拋光技術研究進展[J];化工進展;2008年01期
7 章建群;張朝輝;;非接觸化學機械拋光的材料去除模型[J];科學通報;2008年10期
8 潘潔宗;廖宏誼;;拋光工藝參數(shù)優(yōu)化的正交試驗研究[J];模具工業(yè);2012年04期
9 劉宇宏;董瑩;戴媛靜;雒建斌;;銅拋光液中緩蝕劑5-氨基四唑(ATA)的作用機制研究[J];潤滑與密封;2012年05期
相關博士學位論文 前1條
1 王科;單晶MgO基片化學機械拋光機理與工藝研究[D];大連理工大學;2010年
相關碩士學位論文 前5條
1 祁迎春;Al-Mg合金化學機械拋光表面粗糙度及防氧化腐蝕的研究[D];河北工業(yè)大學;2011年
2 楊海平;半導體硅片化學機械拋光電化學與拋光速率研究[D];中南大學;2007年
3 李樹榮;藍寶石晶片化學機械拋光液的研制[D];大連理工大學;2008年
4 夏琳;硅溶膠化學機械拋光液的研究[D];河南工業(yè)大學;2013年
5 梅錦波;鋁合金化學機械拋光工藝技術的研究[D];湖南大學;2013年
,本文編號:1988317
本文鏈接:http://sikaile.net/kejilunwen/jinshugongy/1988317.html