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離子束輔助沉積雙軸織構(gòu)過渡層研究

發(fā)布時間:2019-02-24 14:10
【摘要】:第二代高溫超導(dǎo)帶材YBa_2Cu_3O_(7-x)(YBCO)以其高不可逆場和大電流承載能力,在輸電線纜、電動機(jī)、超強磁體、限流器等領(lǐng)域有著極其廣闊的應(yīng)用前景。但是目前仍有一些限制高溫超導(dǎo)帶材的商業(yè)化應(yīng)用因素如:高質(zhì)量的雙軸織構(gòu)、帶材的均勻性和低的帶材制備成本。因此,本文致力于在金屬基底上制備低成本、高質(zhì)量雙軸織構(gòu)緩沖層。主要內(nèi)容有:1、利用溶液沉積平坦化(SDP)系統(tǒng)在哈氏合金(Hastelloy C276)基底表面制備出適合IBAD-MgO生長的Y_2O_3非晶薄膜襯底,采用離子束輔助沉積(IBAD)技術(shù),在Y_2O_3非晶薄膜表面制備MgO雙軸織構(gòu)緩沖層。通過對離子束輔助沉積系統(tǒng)中各參數(shù)的研究與分析,得到了IBAD-MgO薄膜形成雙軸織構(gòu)的最優(yōu)工藝,可以制備出面外半高寬3°、面內(nèi)半高寬6°的MgO薄膜。實驗過程中我們發(fā)現(xiàn):在各影響因素中,沉積速率對薄膜的面內(nèi)外織構(gòu)影響最為顯著。得到的IBAD-MgO薄膜表面粗糙度為2nm左右,可以為后續(xù)LMO層的制備提供條件。并且成功制備出一條40m長的IBAD-MgO帶材,經(jīng)測試,其面外半高寬3°左右、面內(nèi)半高寬6°左右,說明薄膜織構(gòu)質(zhì)量較好且均勻性良好。2、由于IBAD-MgO薄膜形成雙軸織構(gòu)的條件較為嚴(yán)格,于是利用離子束輔助沉積系統(tǒng)對新材料進(jìn)行實驗,發(fā)現(xiàn)Na F和Na Cl都可以用IBAD技術(shù)實現(xiàn)薄膜的織構(gòu)化,經(jīng)織構(gòu)化的Na F薄膜面外和面內(nèi)半高寬分別為2.1°和6.9°,Na Cl薄膜面外和面內(nèi)半高寬分別為2.8°和7.7°。與MgO的IBAD織構(gòu)化工藝相比,它們的制備工藝窗口寬:Na F和Na Cl薄膜形成較優(yōu)雙軸織構(gòu)對沉積速率的要求分別為0.1-0.25nm/s和0.05-0.3nm/s,而MgO的沉積速率范圍是0.175-0.2nm/s;對Y_2O_3非晶層襯底的表面粗糙度要求低:IBAD-Na F在涂覆了8層的Y_2O_3非晶層(RMS=5.2nm)上就可以形成質(zhì)量較好的雙軸織構(gòu),IBAD-Na Cl獲得較優(yōu)的雙軸織構(gòu)只需要涂覆4層的Y_2O_3非晶層(RMS=9.7nm)襯底即可。IBAD-Na F和IBAD-Na Cl獲得雙軸織構(gòu)的實現(xiàn)難度低,可以提高制備效率并降低成本。
[Abstract]:The second generation high temperature superconducting tape YBa_2Cu_3O_ (7-x) (YBCO) has a wide application prospect in transmission cable, motor, super strong magnet, current limiter and so on because of its high irreversible field and high current bearing capacity. However, there are still some factors restricting the commercial application of HTS tapes, such as high quality biaxial texture, uniformity and low cost. Therefore, low cost and high quality biaxial texture buffers are prepared on metal substrates. The main contents are as follows: 1. Y_2O_3 amorphous film substrates suitable for IBAD-MgO growth were prepared on the substrate of Hastelloy C276 by solution deposition flattened (SDP) system. Ion beam assisted deposition of (IBAD) was used. MgO biaxial texture buffer layer was prepared on the surface of Y_2O_3 amorphous film. Through the study and analysis of the parameters in the ion beam assisted deposition system, the optimal process for the formation of biaxial texture of IBAD-MgO thin films is obtained. The MgO films with an outer half maximum width of 3 擄and an in-plane half maximum width of 6 擄can be prepared. During the experiment, we found that the deposition rate has the most significant effect on the in-plane texture of the films. The surface roughness of the obtained IBAD-MgO film is about 2nm, which can provide the conditions for the subsequent preparation of LMO layer. A 40m long IBAD-MgO strip has been successfully prepared. The results show that the width of the IBAD-MgO strip is about 3 擄outside the plane and 6 擄in the inside, which shows that the texture quality of the film is good and the uniformity is good. 2. Due to the strict conditions for biaxial texture formation of IBAD-MgO thin films, the new materials are tested by ion beam assisted deposition system. It is found that both Na F and Na Cl can realize the texturing of the films by IBAD technology. The textured Na F films have an out-of-plane and in-plane half-widths of 2.1 擄and 6.9 擄, Na Cl, respectively, and 2.8 擄and 7.7 擄of the out-of-plane and in-plane widths, respectively. Compared with MgO's IBAD texturing process, the optimal biaxial textures of: Na F and Na Cl films are 0.1-0.25nm/s and 0.05-0.3 nm / s, respectively. The deposition rate of MgO was 0.175-0.2 nm / s; The surface roughness of Y_2O_3 amorphous substrate is low: IBAD-Na F can form good quality biaxial texture on Y_2O_3 amorphous layer (RMS=5.2nm) coated with 8 layers. IBAD-Na Cl only needs 4 layers of Y_2O_3 amorphous layer (RMS=9.7nm) substrate to obtain the best biaxial texture. It is easy to obtain biaxial texture by IBAD-Na F and IBAD-Na Cl, which can improve the preparation efficiency and reduce the cost.
【學(xué)位授予單位】:電子科技大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2017
【分類號】:TG174.4

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