一種功率器件封裝釬料的設(shè)計(jì)及性能分析
發(fā)布時(shí)間:2018-10-22 18:49
【摘要】:隨著電子產(chǎn)品的不斷更新?lián)Q代,第三代半導(dǎo)體開(kāi)始被廣泛應(yīng)用在高溫電子封裝中,為此急需開(kāi)發(fā)耐高溫高強(qiáng)度的新型錫基釬料。本文的主要研究?jī)?nèi)容分為兩個(gè)方面:一是Sn-Sb基無(wú)鉛釬料成分的設(shè)計(jì)。采用正交設(shè)計(jì)試驗(yàn)選出最佳的Sn-Sb基合金成分。同時(shí)分析了 SnSbCuNiAg/Cu焊接性及焊接工藝。二是納米銅顆粒對(duì)錫基無(wú)鉛釬料的改性方法研究,為進(jìn)一步提高Sn-Sb基合金的綜合性能提供理論依據(jù)。通過(guò)大量的試驗(yàn),研究了合金元素對(duì)Sn-Sb基釬料熔化特性的影響。以熔化溫度、潤(rùn)濕性以及導(dǎo)熱率為評(píng)價(jià)指標(biāo),對(duì)Sn-Sb基釬料成分進(jìn)行初選和優(yōu)選。Sn-Sb合金中添加不同含量的Ag、Cu、Ni元素以及高熔點(diǎn)的中間合金,其熔化溫度均在221-242 ℃范圍內(nèi)。采用正交設(shè)計(jì)試驗(yàn),優(yōu)選出三種Sn-Sb 基釬料分別為 Sn-5Sb-0.5Cu-0.1Ni-0.1Ag、Sn-5Sb-1Cu-0.1Ni-0.1Ag 和Sn-5Sb-0.5Cu-0.1Ni-0.5Ag。分析了三種SnSbCuNiAg/Cu焊點(diǎn)的微觀組織及力學(xué)性能。280 ℃C釬焊10 s至90s時(shí),焊點(diǎn)界面IMC層不斷增厚。當(dāng)Cu和Ag含量的增加,界面IMC的生長(zhǎng)指數(shù)有所改變。在280 ℃釬焊30 s時(shí),三種焊點(diǎn)的剪切強(qiáng)度均達(dá)到最大。其中Sn-5Sb-0.5Cu-0.1Ni-0.5Ag的剪切強(qiáng)度最高,比SAC305的強(qiáng)度高 36.4^。280 ℃釬焊 10 s 至 90 s 時(shí),Sn-5Sb-0.5Cu-0.1Ni-0.1Ag/Cu焊點(diǎn)的斷裂方式由韌性斷裂逐漸過(guò)渡為韌脆混合斷裂。三種Sn-Sb基釬料的硬度均高于SAC305。為細(xì)化釬料的微觀組織,進(jìn)一步提高焊點(diǎn)的力學(xué)性能,研究了納米銅顆粒對(duì)錫基焊膏的改性方法。添加0.1-1.0 wt%的納米Cu顆粒對(duì)釬料的熔點(diǎn)影響不大。納米Cu顆粒的添加細(xì)化了體釬料的微觀組織。熱時(shí)效前后,添加0.1-1.0wt%的納米Cu顆粒抑制了界面IMC的生長(zhǎng)。當(dāng)添加1.0wt%納米Cu顆粒后,界面IMC的晶粒尺寸有所增加。納米Cu顆粒的添加使焊點(diǎn)體釬料的顯微硬度提高。然而焊點(diǎn)中的氣孔對(duì)焊點(diǎn)硬度和剪切強(qiáng)度產(chǎn)生不利影響。分析了氣孔的形成機(jī)理。同時(shí)研究了納米Cu含量對(duì)氣孔率的影響,隨納米Cu含量從0.1 wt%增至1.0 wt%,氣孔率增大。
[Abstract]:With the continuous upgrading of electronic products, the third generation semiconductor has been widely used in high temperature electronic packaging. Therefore, it is urgent to develop new solders with high temperature resistance and high strength. The main content of this paper is divided into two aspects: one is the design of Sn-Sb-based lead-free solder composition. The optimum composition of Sn-Sb base alloy was selected by orthogonal design test. At the same time, the weldability and welding process of SnSbCuNiAg/Cu are analyzed. Secondly, the modification method of tin based lead-free solder by nano-copper particles is studied, which provides a theoretical basis for further improving the comprehensive properties of Sn-Sb based alloys. The effect of alloying elements on the melting characteristics of Sn-Sb based solder was studied by a large number of experiments. With melting temperature, wettability and thermal conductivity as evaluation indexes, the composition of Sn-Sb based solder was selected and selected. The melting temperature of Sn-Sb alloy with different content of Ag,Cu,Ni elements and high melting point master alloy was in the range of 221-242 鈩,
本文編號(hào):2288008
[Abstract]:With the continuous upgrading of electronic products, the third generation semiconductor has been widely used in high temperature electronic packaging. Therefore, it is urgent to develop new solders with high temperature resistance and high strength. The main content of this paper is divided into two aspects: one is the design of Sn-Sb-based lead-free solder composition. The optimum composition of Sn-Sb base alloy was selected by orthogonal design test. At the same time, the weldability and welding process of SnSbCuNiAg/Cu are analyzed. Secondly, the modification method of tin based lead-free solder by nano-copper particles is studied, which provides a theoretical basis for further improving the comprehensive properties of Sn-Sb based alloys. The effect of alloying elements on the melting characteristics of Sn-Sb based solder was studied by a large number of experiments. With melting temperature, wettability and thermal conductivity as evaluation indexes, the composition of Sn-Sb based solder was selected and selected. The melting temperature of Sn-Sb alloy with different content of Ag,Cu,Ni elements and high melting point master alloy was in the range of 221-242 鈩,
本文編號(hào):2288008
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