【摘要】：目的研究拋光液pH值、溫度和濃度對化學(xué)機(jī)械拋光藍(lán)寶石去除率的影響,以提高拋光效率。方法采用CP4單面拋光試驗機(jī)對直徑為50.8 mm C向藍(lán)寶石晶元進(jìn)行化學(xué)機(jī)械拋光,通過電子分析天平對藍(lán)寶石拋光過程中的材料去除率進(jìn)行了分析,采用原子力顯微鏡(AFM)對藍(lán)寶石晶元拋光前后的表面形貌和粗糙度(Ra)進(jìn)行了評價。結(jié)果藍(lán)寶石在化學(xué)機(jī)械拋光過程中的材料去除率均隨拋光液pH值和溫度的升高呈先增大后減小趨勢。當(dāng)拋光原液與去離子水按1:1的體積比混合配制拋光液,KOH調(diào)節(jié)pH值為12.2,水浴加熱拋光液35℃時,藍(lán)寶石拋光的材料去除率(MRR)達(dá)到1.119μm/h,Ra為0.101 nm。結(jié)論隨著pH的增大,化學(xué)作用逐漸增強(qiáng),而機(jī)械作用逐漸減弱,在pH為12.2的時候能達(dá)到平衡點(diǎn),此時的MRR最佳;隨著溫度的升高,化學(xué)作用逐漸增強(qiáng),而機(jī)械作用保持不變,拋光液溫度為35~40℃時,化學(xué)作用與機(jī)械作用達(dá)到平衡,MRR最佳,當(dāng)溫度高于40℃后,拋光液濃度明顯增大,而過高的濃度會導(dǎo)致MRR的減小。拋光液的相關(guān)性能優(yōu)化后,化學(xué)機(jī)械拋光藍(lán)寶石的MRR較優(yōu)化前提高了71.4%。
[Abstract]:Objective to study the effect of pH value, temperature and concentration of polishing solution on the removal rate of sapphire in chemical mechanical polishing, so as to improve the polishing efficiency. Methods the chemical mechanical polishing of sapphire elements with diameter of 50.8 mm C was carried out by CP4 single side polishing tester, and the material removal rate in the process of sapphire polishing was analyzed by electronic analysis balance. The surface morphology and roughness of sapphire before and after polishing were evaluated by atomic force microscope (AFM). Results the material removal rate of sapphire in the process of chemical mechanical polishing increased at first and then decreased with the increase of pH value and temperature of polishing solution. When the polishing solution was mixed with deionized water at a volume ratio of 1:1, and the pH value of KOH was adjusted to 12.2, the material removal rate of sapphire polishing reached 1.119 渭 m / h and Ra was 0.101 nm., when the polishing solution was heated at 35 鈩，

本文編號：2472106