【摘要】：具有寬禁帶半導(dǎo)體特性的二氧化錫,經(jīng)過(guò)摻雜元素后,具有優(yōu)異的電學(xué)及光學(xué)性能,其熔點(diǎn)高、顏色淺、抗氧化能力高、耐酸堿、毒性小等優(yōu)點(diǎn)廣泛地應(yīng)用于導(dǎo)電\防靜電材料、電池電極材料、電磁屏蔽、太陽(yáng)能薄膜電池、隔熱材料等眾多領(lǐng)域中。但其存在問(wèn)題之一——導(dǎo)電性不夠優(yōu)異,因此需進(jìn)一步提高氧化錫基導(dǎo)電材料的導(dǎo)電性。目前對(duì)于氧化錫基導(dǎo)電材料的研究主要在于單元素?fù)诫s,而雙摻雜鮮有研究。本文采用溶膠-凝膠法制備氟磷共摻雜二氧化錫(FPTO)粉體及其透明薄膜材料,研究制備工藝條件對(duì)材料導(dǎo)電性能的影響,并從而確定出較適宜的制備工藝條件。論文主要研究結(jié)果如下。(1)以二水氯化亞錫(SnCl2·2H2O)、無(wú)水乙醇(CH3CH2OH)、氫氟酸(HF)及磷酸(H3PO4)為原料,利用溶膠-凝膠法制備出導(dǎo)電性良好的FPTO粉體材料,研究了摻雜量、水浴溫度、水浴時(shí)間、煅燒溫度等制備工藝條件對(duì)FPTO導(dǎo)電性能的影響,確定了較適宜的制備工藝參數(shù)：摻氟量約為15%,摻磷量約為25%, Sn濃度為0.4mol/L,水浴溫度為70℃,水浴時(shí)間為4h,摻雜劑在水浴后兩小時(shí)加入,煅燒溫度為6000C,煅燒時(shí)間為2h,在此工藝條件下制備出FPTO粉體的顆粒粒徑為10-30nm,圓球型,且粒度均勻,電阻率為0.113Ω.cm。(2)研究了溶膠-凝膠法制備FPTO薄膜的制膜工藝條件對(duì)膜面微觀形貌的影響規(guī)律。獲得較適宜的制膜工藝條件為：基底經(jīng)過(guò)強(qiáng)酸堿處理,轉(zhuǎn)速為2000r/min,涂膜次數(shù)為10次,溶膠濃度0.67mol/L,煅燒升溫程序：室溫至300℃,0.25℃/min; 300-500℃,5℃/min。但得到的薄膜微觀形貌仍連續(xù)性不足,部分脫落。最佳工藝條件下所得薄膜方塊電阻在104 Ω/□,可見光透過(guò)率在70-80%。導(dǎo)電性未達(dá)到可商業(yè)化應(yīng)用的目標(biāo),究其原因主要在于薄膜微觀連續(xù)性差,因此建議今后重點(diǎn)對(duì)制膜薄膜的工藝條件進(jìn)行進(jìn)一步探索。
[Abstract]:Tin dioxide with wide band gap semiconductor properties, after doping elements, has excellent electrical and optical properties, high melting point, light color, high oxidation resistance, acid and alkali resistance, The advantages of low toxicity are widely used in many fields, such as conductive / antistatic materials, battery electrode materials, electromagnetic shielding, solar thin film batteries, thermal insulation materials and so on. However, one of its existing problems, the conductivity is not good enough, so it is necessary to further improve the conductivity of tin oxide based conductive materials. At present, the research of tin oxide based conductive materials mainly lies in the single element doping, but the double doping is seldom studied. In this paper, fluorophosphorus-co-doped tin dioxide (FPTO) powders and their transparent thin films were prepared by sol-gel method. The effects of preparation conditions on the conductive properties of the materials were studied, and the more suitable preparation conditions were determined. The main results are as follows: (1) with SnCl2 2H2O, CH3CH2OH, (HF) and H3PO4 as raw materials, good conductivity of FPTO powder was prepared by sol-gel method. The doping amount, water bath temperature and water bath time were studied. The effect of calcination temperature on the conductivity of FPTO was studied. The optimum preparation parameters were determined as follows: fluorine content is about 15%, phosphorus content is about 25%, Sn concentration is 0.4 mol / L, and water bath temperature is 70 鈩，

本文編號(hào)：2241247