【摘要】：利用納秒脈沖激光燒蝕(PLA)技術(shù),在室溫、真空環(huán)境中沉積制備了非晶Si薄膜,并通過熱退火實現(xiàn)了薄膜樣品的晶化.利用掃描電子顯微鏡(SEM)、X線衍射(XRD)儀和Raman散射(Raman)儀等技術(shù)對退火后的樣品進行形貌表征和晶態(tài)成分分析,確定了非晶Si薄膜晶化的熱退火閾值溫度以及在該條件下所形成球狀納米Si晶粒的平均直徑,結(jié)果分別為850℃和15nm.假定納米Si晶粒為理想球體,結(jié)合固相晶化過程中的能量變化,計算得到了晶化形成直徑15nm球狀晶粒所需要的能量,即成核勢壘閾值,量級約為10-11 mJ.
[Abstract]:Amorphous Si thin films were prepared by nanosecond pulsed laser ablation (PLA) technique at room temperature and vacuum. The crystallization of the films was realized by thermal annealing. The morphology and crystal composition of the annealed samples were characterized by scanning electron microscope (SEM) (SEM) X-ray diffractometer (XRD) and Raman scattering (Raman) (Raman). The thermal annealing threshold temperature of amorphous Si films and the average diameter of spherical nanocrystalline Si grains formed under these conditions are determined. The results are 850 鈩，

本文編號：2207906