【摘要】：單晶金剛石所具有的高硬度、高禁帶寬度、高熱導(dǎo)率以及耐化學(xué)腐蝕等性質(zhì)使得金剛石作為半導(dǎo)體材料在機(jī)械、光電等領(lǐng)域的應(yīng)用處于重要地位。同時(shí)這些穩(wěn)定的特性對(duì)單晶金剛石的高效超光滑加工帶來(lái)一定的阻礙。本課題在現(xiàn)有的研究基礎(chǔ)上,提出采用SG拋光膜加工單晶金剛石,研究單晶金剛石(100)和(111)晶面的加工工藝和材料去除機(jī)理。并通過(guò)反應(yīng)精拋光方式,對(duì)比其加工效果和作用機(jī)制,提高加工效率和改善表面質(zhì)量,達(dá)到低損傷的加工效果。本文首先采用SG拋光膜拋光單晶金剛石(100)和(111)晶面,對(duì)于(100)晶面需要采用低壓溫和的加工方式可獲得較好的表面質(zhì)量,(111)晶面在低加工壓力下表面粗糙度值可獲得1.088nm,局部表面粗糙度可達(dá)0.70nm。同時(shí)通過(guò)加工表面生成物和磨屑的物相研究金剛石(100)和(111)晶面粗加工階段的材料去除機(jī)理,此時(shí)磨粒對(duì)加工表面機(jī)械作用主要是微破碎去除,其中(100)晶面為機(jī)械塑性刻劃和擠壓去除,(111)晶面為崩脆解理去除,物理方式去除的同時(shí)伴隨著相變?nèi)コ?主要轉(zhuǎn)化為非晶碳和石墨。本文基于SG拋光膜加工的基礎(chǔ)上添加混合磨料和化學(xué)試劑,對(duì)比研究(100)晶面在MP(機(jī)械拋光)、MCP(機(jī)械化學(xué)拋光)和CMP(化學(xué)機(jī)械拋光)三種不同加工方式下的作用效果和作用機(jī)制,提高金剛石精加工階段表面質(zhì)量,為反應(yīng)拋光去除機(jī)理提供理論依據(jù)。通過(guò)劃痕的形態(tài)和成因驗(yàn)證(100)晶面的磨粒機(jī)械作用去除機(jī)制。對(duì)比三種加工方式的加工效果,機(jī)械化學(xué)拋光可有效提高加工效率,材料去除率為25.5nm/min,明顯優(yōu)于其它兩種加工結(jié)果,在機(jī)械作用誘導(dǎo)下金剛石表面材料與碳化硅磨料發(fā)生固相反應(yīng),有效促進(jìn)金剛石發(fā)生非晶化和石墨化相變?nèi)コ?化學(xué)機(jī)械拋光有利于在金剛石表面裂紋處產(chǎn)生腐蝕作用去除。本文研究了金剛石在MP、MCP和CMP精拋后(100)晶面的亞表面損傷形式和損傷尺度。損傷形式主要為非晶化、位錯(cuò)和晶格畸變,損傷尺度在2.0-3.3nm之間,相比其它加工方式,機(jī)械化學(xué)拋光方式形成的亞表面損傷尺度較大,約為3.3nm,與其較大材料去除率相匹配。
[Abstract]:Because of its high hardness, high band gap, high thermal conductivity and chemical corrosion resistance, single crystal diamond plays an important role in the applications of semiconductor materials in mechanical, optoelectronic and other fields. At the same time, these stable characteristics of single crystal diamond high-efficiency super-smooth processing has brought some obstacles. On the basis of the existing research, the processing technology and material removal mechanism of single crystal diamond (100) and (111) crystal face were studied by using SG polishing film to process single crystal diamond. The processing efficiency and surface quality can be improved by comparing the machining effect and the working mechanism through the reactive polishing method to achieve the low damage machining effect. In this paper, the single crystal diamond (100) and (111) faces were polished with SG polishing film. For the (100) crystal surface, the surface quality can be obtained by using low pressure and mild processing. The surface roughness value of (111) crystal plane can be 1.088 nm at low processing pressure, and the local surface roughness can reach 0.70 nm. At the same time, the material removal mechanism of diamond (100) and (111) crystal surface in rough machining stage was studied by the material phase of the surface product and debris. At this time, the mechanical action of abrasive particles on the machined surface was mainly micro-crushing removal. The (100) crystal plane is mechanoplastic and extruded. (111) the crystal plane is the cleavage of collapse and embrittlement. The physical removal is accompanied by phase transition, which is mainly converted to amorphous carbon and graphite. In this paper, based on the processing of SG polishing film, the effect and mechanism of (100) crystal surface in three different processing modes of MP (mechanical chemical polishing) and CMP (chemical mechanical polishing) were studied by adding mixed abrasives and chemical reagents. To improve the surface quality of diamond finishing stage and to provide theoretical basis for the removal mechanism of reactive polishing. The mechanism of mechanical removal of (100) grain surface was verified by scratch morphology and origin. Compared with the three processing methods, mechanochemical polishing can effectively improve the processing efficiency. The material removal rate is 25.5 nm / min, which is obviously superior to the other two processing results. The solid phase reaction between diamond surface material and silicon carbide abrasive induced by mechanical action can effectively promote the removal of amorphous and graphitized phase transition of diamond and the chemical mechanical polishing is conducive to the removal of corrosion at the crack of diamond surface. In this paper, the subsurface damage forms and damage scales of diamond on the (100) crystal plane of MCP and CMP have been studied. The damage forms are mainly amorphous, dislocation and lattice distortion, and the damage scale is between 2.0-3.3nm. Compared with other machining methods, the damage scale of mechanochemical polishing is about 3.3 nm, which is consistent with the larger material removal rate.
【學(xué)位授予單位】：華僑大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TQ163

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