本文選題：氣相沉積 + SiC　； 參考：《太原理工大學(xué)》2015年碩士論文

【摘要】：SiC是第三代半導(dǎo)體材料，，具有禁帶寬度大、熱導(dǎo)率高、電子飽和漂移速度高、臨界擊穿場強高、本征載流子濃度低、抗輻照能力強、化學(xué)穩(wěn)定性好等優(yōu)異物理特性，且與當前成熟的硅基平面工藝相兼容，是研發(fā)高溫、高頻、耐高壓、抗輻照，大功率等電子器件的理想材料，在用作苛刻工作條件下的光催化劑，氣敏檢測器、顯示器、氣敏傳感器和導(dǎo)彈尾焰探測裝置等領(lǐng)域具有重要應(yīng)用前景。SiC低維納米結(jié)構(gòu)不僅保留了其塊體結(jié)構(gòu)的優(yōu)異性能，還兼具低維納米結(jié)構(gòu)的獨特優(yōu)勢，有望為新穎高效的微電子器件研發(fā)帶來契機。 本論文以化學(xué)氣相沉積法制備SiC單晶納米線，通過工藝參數(shù)的探索和優(yōu)化，實現(xiàn)高品質(zhì)SiC單晶納米線的制備。在器件設(shè)計和組裝上，通過光刻和電子束沉積技術(shù)，實現(xiàn)單根SiC納米線光電探測器的研制；通過溶液組裝方法，實現(xiàn)了SiC單晶納米線薄膜光電探測器的研制，通過介電泳力自組裝技術(shù)，實現(xiàn)了基于Si/SiO2和柔性基底上的SiC有序納米線陣列光電探測器研制。研究結(jié)果表明，所研制的光電探測器具有高靈敏、快響應(yīng)、可重復(fù)性高等系列特點。綜合本論文工作，其主要結(jié)果如下： (1)以稻米殼燒灼后的白粉、碳纖維為原料，通過化學(xué)氣相沉積，成功地制備了高質(zhì)量的3C-SiC單晶納米線。其結(jié)構(gòu)表征分析結(jié)果表明，所制備的SiC納米線為單晶，為立方相結(jié)構(gòu)。 (2)所研制的單根SiC光電探測器具有良好的性能：快速的上升和下降光響應(yīng)時間，分別為0.2s和0.09s；較高的光譜響應(yīng)度(Ri)和外量子效率(EQE)，在5.0V偏壓和420nm藍光光照下，其Ri和EQE分別為3.3106A/W和9.7108%，表明所研制的器件具有良好的靈敏度。實驗證明，所研制的光電探測器，能夠勝任200℃的高溫服役條件。 (3) SiC單晶納米線薄膜光電探測器對于420nm光照下光響應(yīng)十分靈敏，具有優(yōu)異的可重復(fù)性和穩(wěn)定性，光生電流和光功率密度為近線性關(guān)系。 (4)與基于單根SiC納米線的光電探測器相比，基于Si/SiO2和柔性基底上的SiC有序納米線陣列的光電探測器性能得到顯著增強；基于柔性基底上的SiC有序納米線陣列光電探測器具有良好的機械柔韌性和電學(xué)穩(wěn)定性，與基于Si/SiO2基底上的SiC有序納米線陣列的光電探測器相比，其光、暗電流有所增加，可能是納米線和柔性基底的接觸較差所致。
[Abstract]:Sic is the third generation semiconductor material. It has many excellent physical properties, such as wide band gap, high thermal conductivity, high electron saturation drift velocity, high critical breakdown field strength, low intrinsic carrier concentration, strong radiation resistance and good chemical stability. Compatible with the current mature silicon based planar process, it is an ideal material for the development of high temperature, high frequency, high pressure, radiation resistant, high power and other electronic devices. It can be used as photocatalyst, gas detector and monitor under harsh working conditions. Gas sensors and missile tail flame detection devices have important application prospects. Sic low dimensional nanostructures not only retain the excellent properties of bulk structures, but also have the unique advantages of low dimensional nanostructures. It is expected to bring opportunities for the development of novel and efficient microelectronic devices. In this paper, sic single crystal nanowires were prepared by chemical vapor deposition. The preparation of high quality sic single crystal nanowires was realized by exploring and optimizing the process parameters. In device design and assembly, single sic nanowire photodetector is developed by photolithography and electron beam deposition, and sic single crystal nanowire film photodetector is developed by solution assembly method. Sic ordered nanowire array photodetectors based on Si / Sio _ 2 and flexible substrate were fabricated by self-assembly of dielectric electrophoresis force. The results show that the photodetector has the characteristics of high sensitivity, fast response and high repeatability. The main results are as follows: (1) High quality 3C-SiC single crystal nanowires were successfully prepared by chemical vapor deposition from white powder and carbon fiber from rice shell. The results of structure characterization show that the sic nanowires are single crystal and cubic phase structure. The single sic photodetector has good properties: fast rising and decreasing light response time are 0.2s and 0.09s, respectively. Under 5.0V bias voltage and 420nm blue light, the Ri and EQE are 3.3106A / W and 9.7108respectively, which show that the device has good sensitivity. The experimental results show that the photodetector is capable of serving at 200 鈩

本文編號：2034107