本文選題：染料敏化太陽電池 + 透明導電氧化物��； 參考：《長沙理工大學》2015年碩士論文

【摘要】：透明導電氧化物(Transparent Conductive Oxide,TCO)薄膜是一類比較有特色的功能材料,它同時具有兩種突出的性質(zhì):可見光透明性和導電性。未摻雜的金屬氧化物屬于半導體,導電性能不是很好,一般可以通過摻雜或者其他缺陷化學原理增強其導電性。一維ZnO納米線陣列,由于納米線尺寸與可見光波尺寸相當,因此具有陷光結(jié)構(gòu)效應,可應用于薄膜太陽電池的透明電極,但單晶納米線摻雜是一個難點。本文使用電化學沉積的方法,在透明導電玻璃基底低成本、大面積制備Al摻雜ZnO透明導電納米線陣列。采用掃描電子顯微鏡、X-射線衍射儀、能譜分析儀等手段對樣品的表面微觀結(jié)構(gòu)、物相組成及形貌進行表征與分析,結(jié)合循環(huán)伏安譜分析薄膜生長機理。經(jīng)過比較分析,進而確定電化學反應過程中較佳的Zn2+、Al3+離子濃度、電位大小、極板間距離、溫度等實驗條件,從而得到最優(yōu)性能的透明導電ZnO納米線陣列薄膜,最終實現(xiàn)對Al摻雜ZnO透明導電納米線陣列的可控生長。獲得以下幾個方面的結(jié)論:(1)電化學沉積ZnO過程中電化學反應、沉淀-溶解、成核-生長三個過程共同決定晶粒形貌,在溶液濃度0.003mol/L、沉積溫度70~80℃、極板間距離2cm、沉積電位-1.6~-1.4V之間最有利于長成納米線陣列,Al摻雜將影響ZnO納米線陣列的擇優(yōu)生長取向性、形貌及性能。(2)證實Zn(NO_3)_2-Al(NO_3)_3水溶液體系與Zn(NO_3)_2-In(NO_3)_3水溶液體系中電沉積ZnO存在很大的差別。前者可以共沉積制備Al摻雜ZnO納米線陣列,而后者只能單獨沉積出ZnO或In2O3,這可能是Zn(OH)2和In(OH)3溶度積差值較大的緣故。(3)得出實現(xiàn)Al摻雜ZnO透明導電納米線陣列可控生長的工藝條件,當Al/Zn=1at.%,電沉積時間為60min,陰極還原電位U=-1.5V時,獲得結(jié)構(gòu)與性能較優(yōu)的Al摻雜ZnO透明導電納米線陣列。(4)比較了四氯化鈦與鈦酸四丁酯分別作為前驅(qū)體溶膠-凝膠法合成TiO_2薄膜的工藝,由于后者的溶膠更容易形成連續(xù)網(wǎng)絡的[-Ti-O-]n鏈,制得薄膜更加均勻致密、不容易開裂、導電性較優(yōu),更適合于在Al摻雜ZnO透明導電納米線陣列表面修飾一層細顆粒TiO_2膜。
[Abstract]:Transparent conductive oxide (TCO) thin films are a kind of special functional materials, which have two outstanding properties: transparency of visible light and conductivity. Undoped metal oxides belong to semiconductors and their electrical conductivity is not very good, which can be enhanced by doping or other defect chemical principles. One-dimensional ZnO nanowire arrays have trapping structure effect due to the same size of nanowires and visible light waves, so they can be used as transparent electrodes for thin film solar cells, but the doping of single crystal nanowires is a difficult problem. In this paper, Al-doped ZnO transparent conductive nanowire arrays were prepared by electrochemical deposition on transparent conductive glass substrates with low cost and large area. The surface microstructure, phase composition and morphology of the samples were characterized and analyzed by means of scanning electron microscope (SEM), X-ray diffraction (XRD) and energy spectrum analyzer (EDS). The growth mechanism of the films was analyzed by cyclic voltammetry. Through comparison and analysis, the optimum experimental conditions such as Zn ~ (2 +) ~ (2 +) Al _ (3) ion concentration, potential, distance between plates and temperature were determined, and the transparent conducting ZnO nanowire array films with optimal performance were obtained. Finally, the controllable growth of Al doped ZnO transparent conductive nanowire arrays is realized. The following conclusions are obtained: (1) Electrochemical reaction, precipitation, dissolution, nucleation and growth of ZnO determine the grain morphology in the solution concentration of 0.003 mol / L, and the deposition temperature is 70 ~ 80 鈩，

本文編號：2004289