發(fā)布時間：2018-05-15 00:38

  本文選題：氧化石墨烯 + 石墨烯�。� 參考：《北京交通大學》2017年碩士論文

【摘要】：石墨烯作為單原子層厚度的二維新型材料,具有比表面積大、電子遷移率高、機械強度好、高透光率等一系列性質,因此它可能是取代氧化銦錫(ITO)作為電極的材料,同時,在儲能、半導體、光電子器件、能源材料等領域也體現(xiàn)出巨大應用前景。因此需要開發(fā)新穎和簡單的方法用于大規(guī)模制備具有高導電性和高透明度的石墨烯薄膜。本文采用Hummers法獲得氧化石墨烯(GO),通過旋涂成膜得到GO薄膜;并使用SnC12界面縮減還原方法獲得rGO薄膜,探究其還原效果以及影響薄膜性能的各種因素;并進一步探究利用CNTs和GO的混合液制備透明導電薄膜。所得成果概括如下:(1)通過SnCl_2界面縮減方法可在不同尺寸和材質的基底制備石墨烯薄膜。探究了影響石墨烯薄膜性能的各種因素,確定最佳轉速是100Or/min;最佳還原劑濃度是 1.5 M;得到 GO 濃度為 2 mg/ml 時,在 550 nm 處,T=80%,Rs=10.5 kΩ/sq的石墨烯薄膜。相比VC還原,XRD圖表明SnC12還原方法對應rGO層間距更小,還原性更強;Raman表征結果表明SnC12還原的薄膜I2D/ID+G更大,還原效果更顯著;由FT-IR圖可知,這是由于SnC12方式對GO中含氧官能團的還原更徹底;相同透光率下,SnC12還原的薄膜方阻比VC還原平均減少約20kΩ/sq,這說明薄膜還原越徹底,薄膜二維晶格結構恢復越好,電子傳輸能力更強。(2)對比一次還原(SnC12)與二次還原(SnC12+VC),Raman圖譜表明,二次還原I2D/ID+G更大,因此二次還原的還原性要強于一次還原;對應XRD衍射圖中二次還原特征峰位相對于一次還原發(fā)生右移,二次還原對應rGO的層間距更小,即二次還原的還原性強于一次還原;由FT-IR圖可知,這主要是因為二次還原能夠除去的含氧官能團的種類更多、更徹底。此外,二次還原薄膜相比一次還原方阻更小,其結果也證實二次還原的效果更顯著;相同透光率下,二次還原得到的薄膜方阻平均減小約3 kΩ/sq。(3)CNTs/石墨烯導電薄膜制備過程中,少量CTAB對CNTs進行修飾,可減輕其易團聚和不易分散的特性。得到能夠改善導電薄膜導電性能的最佳配比,即等體積的CNTs濃度:GO濃度=1:8;前驅體分散液濃度小于3 mg/ml時,復合薄膜導電性的改善顯著,平均方阻下降2 kΩ/sq;CNTs/石墨烯導電薄膜中,石墨烯片層能夠填補CNTs組成的導電網(wǎng)絡的空隙,為載流子的遷移提供更多通道,因此可以改善石墨烯薄膜導電性能。
[Abstract]:Graphene, as a new two-dimensional material with monatomic layer thickness, has a series of properties, such as large specific surface area, high electron mobility, good mechanical strength, high transmittance and so on. Therefore, graphene may replace indium tin oxide (ITO) as electrode material, at the same time, Energy storage, semiconductors, optoelectronic devices, energy materials and other fields also show great application prospects. Therefore, novel and simple methods need to be developed for large-scale preparation of graphene thin films with high conductivity and transparency. In this paper, go thin films are obtained by Hummers method, go films are obtained by spin coating, and rGO thin films are obtained by SnC12 interface reduction method, and the reduction effect and various factors affecting the properties of the films are investigated. The transparent conductive films were prepared by using the mixture of CNTs and go. The results are summarized as follows: (1) graphene thin films can be prepared on substrates of different sizes and materials by SnCl_2 interface reduction. Various factors affecting the properties of graphene thin films were investigated. The optimum rotational speed was 100Orr / min, the optimum concentration of reductant was 1.5m, and the graphene films with 2 mg/ml go concentration were obtained at 550 nm. Compared with VC reductive X-ray diffraction diagram, the SnC12 reduction method shows that the rGO layer spacing is smaller and the reductive property is stronger. The results show that the I2D/ID G of the SnC12 reduced film is larger and the reduction effect is more significant than that of the SnC12 reduction method, and the results can be seen from the FT-IR diagram. This is due to the fact that the reduction of oxygen functional groups in go by SnC12 method is more thorough, and that the square resistance of thin films reduced by SnC12 at the same transmittance is about 20k 惟 / sqm compared with VC reduction, which indicates that the more thorough the reduction of the thin films, the better the two-dimensional lattice structure of the films is restored. The results show that the second reduction I2D/ID G is larger than the second reduction I2D/ID G, so the reducibility of the secondary reduction is stronger than that of the primary reduction. In the corresponding XRD diffraction pattern, the peak position of the secondary reduction is shifted to the right, and the interval between the layers of the secondary reduction corresponding to the rGO is smaller, that is, the reducibility of the secondary reduction is stronger than that of the first reduction. This is mainly due to the second reduction can remove more types of oxygen-containing functional groups, more thorough. In addition, the second reduction film has a smaller square resistance than that of the first reduction, and the results show that the second reduction is more effective, and at the same light transmittance, the square resistance of the second reduction film is reduced by about 3 k 惟 / sq.3C / graphene in the preparation process of CNTsS / graphene conductive thin films. A small amount of CTAB modifies CNTs to reduce its agglomeration and dispersion. The optimum ratio of the conductive properties of the conductive thin films was obtained, that is, when the concentration of CNTs was equal to 1: 8, the concentration of precursor dispersion was less than 3 mg/ml, the conductivity of the composite films was improved significantly, and the average square resistance was decreased by 2 k 惟 / sqnn / graphene conductive thin films. The graphene layer can fill the gap of the conductive network formed by CNTs and provide more channels for carrier migration, so it can improve the conductivity of graphene film.
【學位授予單位】：北京交通大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TQ127.11;TB383.2

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