本文選題：合成金剛石 + 溫控條件��； 參考：《燕山大學(xué)》2015年碩士論文

【摘要】：本文利用同步輻射白光貌相術(shù)、傅里葉變換紅外光譜儀、顯微共焦拉曼光譜儀、掃描電子顯微鏡等儀器研究了慢升溫恒溫保持慢降溫(SCS)、慢升溫恒溫保持快降溫(SCQ)、慢升溫恒溫保持驟停(SCQQ)三組不同溫控條件下合成的金剛石晶體。分析了三組樣品晶體內(nèi)部所含雜質(zhì)種類、晶體缺陷類型、空間分布特點、缺陷的分布特點與晶體摻雜的關(guān)系,結(jié)合晶體的合成條件,分析了晶體缺陷與不同降溫速率的關(guān)系。傅里葉變換紅外光譜結(jié)果顯示,第一組SCS樣品除含有氫、氮等雜質(zhì)外,還含有磷、硼等摻雜元素。由同步輻射白光貌相術(shù)得到的衍射圖像表明,三組合成晶體中缺陷的主要表現(xiàn)形式是位錯、扇形層錯和其他面缺陷。第一組合成樣品中,主要摻入磷雜質(zhì)的樣品D16-6在晶體表層560~630μm范圍內(nèi)出現(xiàn)了密度較大的位錯層,位錯走向在111~112之間。結(jié)合紅外圖譜,發(fā)現(xiàn)該位錯層空間分布與磷的分布范圍相吻合。主要摻入硼雜質(zhì)的樣品D16-4在晶體表層580~690μm范圍內(nèi)出現(xiàn)了位錯密度較大的位錯層,但位錯層衍射襯度比D16-6的位錯層襯度小。同時摻雜磷和硼的金剛石樣品則在晶體表層600~760μm范圍內(nèi)出現(xiàn)了位錯密度較大的位錯層,且位錯層的位錯像襯度與摻磷為主樣品的位錯像襯度相當(dāng)。在第二組和第三組樣品中除了同生位錯、層錯等缺陷之外,還出現(xiàn)了切割同生位錯的面缺陷。這種面缺陷在第二組樣品中僅在局部零星出現(xiàn),大多平行于{100},在第三組樣品中則多個平行成組出現(xiàn),面缺陷間密度較大,間距在68~86μm之間。這些面缺陷方位介于{110}~{113}之間。由于這些面缺陷切割了位錯和層錯等同生缺陷,說明它們形成于這些同生缺陷之后,也證明了這些面缺陷是晶體快速降溫引起。由于這些面缺陷在SCQQ樣品中比SCQ樣品中發(fā)育更多,表明快速和驟停降溫過程對合成金剛石的質(zhì)量造成了不良影響。
[Abstract]:In this paper, synchrotron radiation white light profiling, Fourier transform infrared spectrometer, microconfocal Raman spectrometer, Three groups of diamond crystals have been studied by scanning electron microscope (SEM) under different temperature-controlled conditions: slow temperature constant temperature keeping slow cooling temperature keeping fast temperature drop and slow temperature constant temperature keeping sudden arrest (SCQQ). The types of impurities, the types of crystal defects, the spatial distribution characteristics, the relationship between the distribution characteristics of defects and crystal doping in three groups of samples were analyzed. The relationship between the crystal defects and different cooling rates was analyzed in combination with the synthesis conditions of the crystals. Fourier transform infrared spectroscopy (FTIR) showed that the first group of SCS samples contained not only impurities such as hydrogen and nitrogen, but also doping elements such as phosphorus and boron. The diffraction images obtained by synchrotron radiation white light profiling show that the main forms of defects in the three crystals are dislocations, sector faults and other surface defects. In the first combinatorial sample, the sample D16-6, which is mainly doped with phosphorus impurity, has a dense dislocation layer in the range of 560,630 渭 m on the surface of the crystal, and the dislocation strike is between 111 and 112. Combined with infrared spectra, it was found that the spatial distribution of the dislocation layer coincided with the distribution range of phosphorus. The sample D16-4 mainly doped with boron impurity appears dislocation layer with high dislocation density in the range of 580U 690 渭 m on the surface of crystal, but the diffraction contrast of dislocation layer is smaller than that of D16-6. At the same time, the diamond samples doped with phosphorus and boron have a high dislocation density in the range of 600 ~ 760 渭 m on the surface of the crystal, and the dislocation contrast of the dislocation layer is equivalent to that of the phosphorus doped diamond sample. In the second group and the third group, in addition to the dislocations, stacking faults and other defects, there are also dislocations in the cutting surface. In the second group of samples, most of them are parallel to {100}, and in the third group there are many parallel groups. The density of surface defects is high, and the distance between them is between 68 ~ 86 渭 m. The azimuth of these surface defects is between {110} and {113}. The dislocations and stacking faults are cut by these surface defects, which indicates that they are formed after these syngenic defects, and it is also proved that these surface defects are caused by the rapid cooling of crystals. Because these surface defects are more developed in SCQQ samples than in SCQ samples, it is suggested that the rapid and sudden cooling process has a negative effect on the quality of synthetic diamond.
【學(xué)位授予單位】：燕山大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TQ163

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 何緒林;;金剛石資源狀況與發(fā)展綜述[J];超硬材料工程;2010年06期

2 劉小雨;梁榕;楊志軍;;金剛石內(nèi)部結(jié)構(gòu)的差異性研究及其意義[J];礦物學(xué)報;2010年S1期

3 劉曉兵;胡強;馬紅安;郭新凱;張壯飛;趙明;賈曉鵬;;高溫高壓下金剛石同質(zhì)外延生長的研究[J];超硬材料工程;2010年02期

4 楊志軍;李紅中;周永章;王曉悅;羅鋒;;天然與高溫高壓合成金剛石的RAMAN與PL光譜研究[J];光譜學(xué)與光譜分析;2009年12期

5 臧傳義;陳奎;胡強;黃國鋒;陳孝洲;賈曉鵬;;高溫高壓生長寶石級金剛石單晶的表面特征研究[J];人工晶體學(xué)報;2009年03期

6 鄭日升;方嘯虎;劉瑞平;溫簡杰;;人造金剛石晶體中氣態(tài)和固態(tài)包裹體的研究[J];金剛石與磨料磨具工程;2009年03期

7 張和民;馬紅安;李小雷;周升國;鄭友進(jìn);賈曉鵬;;添加劑硼對合成細(xì)顆粒金剛石單晶的影響[J];超硬材料工程;2008年04期

8 李洪巖,李木森,宮建紅,鄭克芳;高溫高壓合成含硼金剛石單晶制備工藝初探[J];材料科學(xué)與工程學(xué)報;2005年04期

9 陳濤,巫翔,亓利劍,王河錦;人造金剛石晶體缺陷的同步輻射X射線衍射形貌像淺析[J];人工晶體學(xué)報;2005年01期

10 牟其善,張杰,官文櫟,彭祖建,李可,胡秀琴,劉希玲,路慶明,馬長勤,王緒寧,田玉蓮;利用同步輻射形貌術(shù)研究晶體缺陷的實驗方法探討[J];物理實驗;2001年07期

，

本文編號：1858930