發(fā)布時(shí)間：2018-03-05 09:29

  本文選題：SnO　切入點(diǎn)：電子束蒸發(fā)　出處：《寧波大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：雙極性薄膜晶體管可以通過(guò)改變柵極和源漏電壓的極性和大小來(lái)實(shí)現(xiàn)空穴和電子的可控注入與輸運(yùn)。其可簡(jiǎn)化電路的設(shè)計(jì)和制備流程,從而大大減少相關(guān)器件、電路制造的復(fù)雜程度。近十幾年以來(lái),以氧化物半導(dǎo)體為溝道的薄膜晶體管具有較高的場(chǎng)效應(yīng)遷移率、較小的亞閾值擺幅、較大的開(kāi)關(guān)比、較好的透明性、可低溫制備以及與硅基工藝基本兼容等諸多優(yōu)點(diǎn)而備受關(guān)注。然而多數(shù)氧化物半導(dǎo)體薄膜晶體管表現(xiàn)為單極性(n型或p型),有關(guān)雙極性氧化物半導(dǎo)體薄膜晶體管的報(bào)道則相對(duì)較少。雙極性氧化物薄膜晶體管的實(shí)現(xiàn),面臨溝道材料性能優(yōu)化和器件結(jié)構(gòu)設(shè)計(jì)兩方面的挑戰(zhàn)。本論文采用氧化亞錫(SnO)為溝道層材料,圍繞上述兩個(gè)關(guān)鍵點(diǎn)展開(kāi)研究。主要成果如下:(1)本研究實(shí)現(xiàn)了多晶SnO薄膜的結(jié)晶取向控制和拉曼特征峰。通過(guò)電子束蒸發(fā)技術(shù)分別制備了(001)和(101)結(jié)晶取向的多晶SnO薄膜。實(shí)驗(yàn)表明,SnO薄膜中化學(xué)計(jì)量比的改變是實(shí)現(xiàn)其擇優(yōu)取向轉(zhuǎn)變的主要原因,富O和富Sn薄膜分別利于(001)和(101)結(jié)晶取向的實(shí)現(xiàn)。而且,我們發(fā)現(xiàn)SnO薄膜的拉曼特征峰與結(jié)晶取向具有密切關(guān)系。110 cm-1處的拉曼峰強(qiáng)隨薄膜中(001)取向織構(gòu)系數(shù)的增加而變小,隨(101)取向織構(gòu)系數(shù)的增加而變大。這與根據(jù)拉曼選擇定則預(yù)期的Eg模式拉曼峰隨薄膜取向的變化關(guān)系相一致,從而確定110 cm-1處拉曼峰為Eg模式,為110 cm-1處拉曼峰的指認(rèn)同時(shí)提供了實(shí)驗(yàn)和理論兩方面的證據(jù)。(2)為了提高雙極性Sn O薄膜晶體管的性能,必須尋找平衡和優(yōu)化電子和空穴兩種載流子平衡注入和輸運(yùn)的方法。本研究從調(diào)控SnO薄膜的化學(xué)計(jì)量比和載流子注入勢(shì)壘高度兩個(gè)方面入手,通過(guò)調(diào)控快速退火氣氛中Ar含量、SnO背溝道表面添加Al2O3覆蓋層以及源漏電極和溝道之間引入Al2O3接觸勢(shì)壘層等手段來(lái)優(yōu)化SnO晶體管的雙極性性能。結(jié)果表明,化學(xué)當(dāng)量的SnO溝道有利于雙極性薄膜晶體管場(chǎng)效應(yīng)遷移率、開(kāi)關(guān)比和對(duì)稱性的提高。然而,富Sn情況下金屬Sn缺陷的存在會(huì)使晶體管雙極性性能退化,富O情況下部分SnO易被氧化成Sn O2引起晶體管性能轉(zhuǎn)變?yōu)楦咦杌騨型。此外,在源漏和溝道之間引入Al2O3接觸勢(shì)壘層可以減少SnO的表面態(tài)、增加空穴的注入勢(shì)壘,從而提高SnO薄膜晶體管對(duì)稱性和開(kāi)關(guān)比。最優(yōu)雙極性SnO薄膜晶體管的場(chǎng)效應(yīng)遷移率和開(kāi)關(guān)比在n型工作區(qū)分別為2.85 cm2V-1S-1和1.3×103,在p型工作區(qū)分別為0.90 cm2V-1S-1和1.7×103。
[Abstract]:Bipolar thin film transistors can realize controlled injection and transport of holes and electrons by changing the polarity and size of gate and source / drain voltages. The complexity of circuit fabrication. In recent decades, thin film transistors with oxide semiconductors as channels have higher field effect mobility, smaller sub-threshold swing, larger switching ratio, better transparency, Many advantages, such as low temperature preparation and compatibility with silicon based process, have attracted much attention. However, most oxide semiconductor thin film transistors exhibit unipolar n or p type, and are related to bipolar oxide semiconductor thin film transistors. The realization of bipolar oxide thin film transistors, Facing the challenges of channel material performance optimization and device structure design, Sno _ 2O _ 3 is used as channel layer material in this paper. The main results are as follows: (1) in this study, the crystal orientation control and Raman characteristic peaks of polycrystalline SnO thin films have been realized. The experimental results show that the change of stoichiometric ratio in Sno films is the main reason for the preferential orientation transition. Moreover, we found that the Raman characteristic peak of SnO thin films is closely related to the crystalline orientation. The Raman peak intensity at 0.110 cm-1 decreases with the increase of the texture coefficient of the SnO films. This is consistent with the expected relationship between the Raman peak of Eg mode and the orientation of the film according to the Raman selection rule, thus determining that the Raman peak at 110 cm-1 is an Eg mode, and that the Raman peak of the film increases with the increase of the orientation coefficient of the film, which is consistent with the expected relationship between the Raman peak and the orientation of the film. In order to improve the performance of bipolar Sno thin film transistors, both experimental and theoretical evidences are provided for the identification of Raman peaks at 110 cm-1. The methods of equilibrium and optimization of electron and hole equilibrium injection and transport must be found. In this study, the stoichiometric ratio and carrier injection barrier height of SnO thin films are regulated. The bipolar performance of SnO transistors is optimized by adjusting the ar content and the addition of Al2O3 overlay on the surface of the back channel in the rapid annealing atmosphere and the introduction of Al2O3 contact barrier layer between the source and leakage electrodes and channels. Chemically equivalent SnO channels can improve the field effect mobility, switching ratio and symmetry of bipolar thin film transistors. However, the existence of Sn defects in Sn rich state will degrade the bipolar properties of the transistors. In the case of rich O, part of SnO is easily oxidized to Sno 2, which causes the transistor performance to change to high resistance or n type. In addition, the introduction of Al2O3 contact barrier layer between source, drain and channel can reduce the surface state of SnO and increase the injection barrier of hole. Therefore, the symmetry and switching ratio of SnO thin film transistors are improved. The optimal field effect mobility and switching ratio of bipolar SnO thin film transistors are 2.85 cm2V-1S-1 and 1.3 脳 103 in n-type workspaces, 0.90 cm2V-1S-1 and 1.7 脳 103 in p-type workspaces, respectively.
【學(xué)位授予單位】：寧波大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ134.32;TB383.2

【共引文獻(xiàn)】

相關(guān)期刊論文 前2條

1 原宏宇;苑夢(mèng)堯;劉靜;伊福廷;吳忠華;王煥華;張杰;;單一取向Cu_2O納米棒的一種工業(yè)制備技術(shù)[J];材料科學(xué)與工程學(xué)報(bào);2014年03期

2 馮云珠;董磊;于良民;;氧化鋅/氧化亞銅異質(zhì)結(jié)太陽(yáng)能電池的研究進(jìn)展[J];材料導(dǎo)報(bào);2015年15期

相關(guān)博士學(xué)位論文 前2條

1 鐘衛(wèi);靜電紡絲導(dǎo)電納米纖維及聚合物太陽(yáng)能電池溶液加工研究[D];南昌大學(xué);2014年

2 張楨;氧化亞銅薄膜的電化學(xué)制備及其光催化和光電性能的研究[D];上海交通大學(xué);2014年

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本文編號(hào)：1569662