低溫溶劑熱法制備新型四元二維含砷硫?qū)倩衔锛捌湮锢硇阅苎芯?/H1>
發(fā)布時(shí)間：2019-04-24 08:38
【摘要】：多元硫?qū)倩衔锸且活?lèi)結(jié)構(gòu)非常豐富的半導(dǎo)體材料,具有優(yōu)良的物理化學(xué)性能,在非線性光學(xué)、光催化、太陽(yáng)能電池等領(lǐng)域具有廣泛的應(yīng)用。因此,它們的合成研究已經(jīng)成為目前無(wú)機(jī)化學(xué)合成方向的一個(gè)十分活躍的研究領(lǐng)域。近年來(lái),因?yàn)楹榈牧驅(qū)倩衔锞哂行路f的結(jié)構(gòu)類(lèi)型和潛在的應(yīng)用前景,吸引了越來(lái)越多人的關(guān)注。眾所周知,表面活性劑具有蒸氣壓較低、熱穩(wěn)定性高、價(jià)格便宜等優(yōu)點(diǎn),且能夠調(diào)節(jié)納米晶體的尺寸、表面能、物理性質(zhì),以及調(diào)控多孔框架結(jié)構(gòu)內(nèi)部孔的尺寸等,在納米晶和多孔框架材料的制備合成方面應(yīng)用廣泛,但其應(yīng)用在制備合成新型多元硫?qū)倩衔锓矫娴膱?bào)道研究相對(duì)較少。本文以表面活性劑配合有機(jī)胺作為反應(yīng)介質(zhì),通過(guò)對(duì)反應(yīng)條件(反應(yīng)物的種類(lèi)及用量、溶劑種類(lèi)和用量、反應(yīng)溫度、反應(yīng)時(shí)間等因素)進(jìn)行調(diào)控,成功制備出6種新型四元含砷的硫?qū)倩衔顲s3CuAs4S8(1)、Cs3CuAs4Se8(2)、NaAg2AsS3·H2O(3)、KAg2AsS3(4)、Cs2Ag2As2S5(5)和 Cs3AgAs4S8(6),該工藝過(guò)程簡(jiǎn)單,易于操作,且制得目標(biāo)產(chǎn)物產(chǎn)率較高,晶體質(zhì)量較好。通過(guò)SEM、EDS、單晶X射線衍射、XRD、UV、TG及理論計(jì)算等手段,對(duì)化合物進(jìn)行結(jié)構(gòu)與性能表征分析。發(fā)現(xiàn)這6種硫?qū)倩衔锒季哂卸S層狀的結(jié)構(gòu),且除化合物NaAg2AsS3·H20是間接帶隙半導(dǎo)體材料外其他均為直接帶隙半導(dǎo)體材料。
[Abstract]:Multi-sulfur compounds are a kind of semiconductor materials with very rich structure and have excellent physical and chemical properties. They are widely used in nonlinear optics, photocatalysis, solar cells and other fields. Therefore, their synthesis has become a very active research field in the direction of inorganic synthesis. In recent years, arsenic-containing sulfur compounds have attracted more and more attention because of their novel structural types and potential application prospects. It is well known that surfactants have the advantages of low vapor pressure, high thermal stability and low price, and can adjust the size of nanocrystals, surface energy, physical properties, and the size of pores in porous frame structure, etc. It has been widely used in the preparation and synthesis of nanocrystals and porous frame materials, but there are relatively few reports on the preparation and synthesis of new multi-element thiosulfide compounds. In this paper, surfactant and organic amine were used as the reaction medium, and the reaction conditions (such as the type and dosage of reactant, the type and amount of solvent, the reaction temperature, the reaction time and so on) were adjusted and controlled. Six new quaternary thiosulfide compounds Cs3CuAs4S8 (1), Cs3CuAs4Se8 (2), NaAg2AsS3 路H2O (3), KAg2AsS3 (4), Cs2Ag2As2S5 (5) and Cs3AgAs4S8 (6) were prepared successfully. The process is simple and easy to operate, and the yield of the target products is high. The crystal is of good quality. The structure and properties of the compounds were characterized by SEM,EDS, single crystal X-ray diffraction, XRD,UV,TG and theoretical calculation. It was found that the six thiosulfide compounds all have two-dimensional layered structures, and all of them are direct band-gap semiconductor materials except the compound NaAg2AsS3 路H _ 20 is an indirect band-gap semiconductor material.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：O649
【參考文獻(xiàn)】
相關(guān)期刊論文 前4條
1 張帥;;太陽(yáng)能電池工作原理簡(jiǎn)介[J];燈與照明;2009年03期
2 賈定先;戴潔;趙前信;唐愛(ài)斌;劉宇;;軟化學(xué)法合成有機(jī)雜化鍺、錫硫?qū)倩锏难芯窟M(jìn)展[J];無(wú)機(jī)化學(xué)學(xué)報(bào);2006年02期
3 董言治,安永林,辛劍;低維硫?qū)倩锞w的合成研究進(jìn)展[J];功能材料與器件學(xué)報(bào);2001年02期
4 陳震,王如驥;二維層狀金屬碲化物[Mn(en)_3]Ag_6Sn_2Te_8的制備及其晶體結(jié)構(gòu)的分析[J];化學(xué)通報(bào);2000年11期
相關(guān)博士學(xué)位論文 前1條
1 張悅煒;異質(zhì)結(jié)構(gòu)復(fù)合制備二氧化鈦基光催化劑及其改性機(jī)制研究[D];浙江大學(xué);2013年
，
本文編號(hào)：2464307
本文鏈接：http://sikaile.net/kejilunwen/huaxue/2464307.html
[Abstract]:Multi-sulfur compounds are a kind of semiconductor materials with very rich structure and have excellent physical and chemical properties. They are widely used in nonlinear optics, photocatalysis, solar cells and other fields. Therefore, their synthesis has become a very active research field in the direction of inorganic synthesis. In recent years, arsenic-containing sulfur compounds have attracted more and more attention because of their novel structural types and potential application prospects. It is well known that surfactants have the advantages of low vapor pressure, high thermal stability and low price, and can adjust the size of nanocrystals, surface energy, physical properties, and the size of pores in porous frame structure, etc. It has been widely used in the preparation and synthesis of nanocrystals and porous frame materials, but there are relatively few reports on the preparation and synthesis of new multi-element thiosulfide compounds. In this paper, surfactant and organic amine were used as the reaction medium, and the reaction conditions (such as the type and dosage of reactant, the type and amount of solvent, the reaction temperature, the reaction time and so on) were adjusted and controlled. Six new quaternary thiosulfide compounds Cs3CuAs4S8 (1), Cs3CuAs4Se8 (2), NaAg2AsS3 路H2O (3), KAg2AsS3 (4), Cs2Ag2As2S5 (5) and Cs3AgAs4S8 (6) were prepared successfully. The process is simple and easy to operate, and the yield of the target products is high. The crystal is of good quality. The structure and properties of the compounds were characterized by SEM,EDS, single crystal X-ray diffraction, XRD,UV,TG and theoretical calculation. It was found that the six thiosulfide compounds all have two-dimensional layered structures, and all of them are direct band-gap semiconductor materials except the compound NaAg2AsS3 路H _ 20 is an indirect band-gap semiconductor material.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類(lèi)號(hào)】：O649
【參考文獻(xiàn)】
相關(guān)期刊論文 前4條
1 張帥;;太陽(yáng)能電池工作原理簡(jiǎn)介[J];燈與照明;2009年03期
2 賈定先;戴潔;趙前信;唐愛(ài)斌;劉宇;;軟化學(xué)法合成有機(jī)雜化鍺、錫硫?qū)倩锏难芯窟M(jìn)展[J];無(wú)機(jī)化學(xué)學(xué)報(bào);2006年02期
3 董言治,安永林,辛劍;低維硫?qū)倩锞w的合成研究進(jìn)展[J];功能材料與器件學(xué)報(bào);2001年02期
4 陳震,王如驥;二維層狀金屬碲化物[Mn(en)_3]Ag_6Sn_2Te_8的制備及其晶體結(jié)構(gòu)的分析[J];化學(xué)通報(bào);2000年11期
相關(guān)博士學(xué)位論文 前1條
1 張悅煒;異質(zhì)結(jié)構(gòu)復(fù)合制備二氧化鈦基光催化劑及其改性機(jī)制研究[D];浙江大學(xué);2013年
，本文編號(hào)：2464307
本文鏈接：http://sikaile.net/kejilunwen/huaxue/2464307.html
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