【摘要】：能帶結(jié)構(gòu)是從熱力學(xué)層面判斷半導(dǎo)體光催化材料是否具有催化活性的重要參數(shù),其在暗場(chǎng)和光場(chǎng)作用下的精確測(cè)定是其準(zhǔn)確評(píng)價(jià)材料催化性能的前提。與熱力學(xué)相比,動(dòng)力學(xué)活性則決定了材料的實(shí)際催化效率。針對(duì)光場(chǎng)作用下能帶結(jié)構(gòu)的精確測(cè)定和光催化動(dòng)力學(xué)參數(shù)的確定等問題,本論文以制備的鉍(Bi)基氧化物為研究體系,對(duì)其進(jìn)行UV-VisDRS、XRD、SEM、TEM及XPS等測(cè)試,獲得材料的禁帶寬度、晶體結(jié)構(gòu)、表面形貌及表面組成性質(zhì)�；诠怆娀瘜W(xué)測(cè)試技術(shù)并結(jié)合材料的上述理化測(cè)試數(shù)據(jù)及結(jié)果,擬建立在光場(chǎng)作用下以塔菲爾(tafel)曲線為核心的平帶電位及材料n、p性質(zhì)的測(cè)試方法,并提出基于交換光電流密度的光催化動(dòng)力學(xué)活性評(píng)價(jià)方法,與半導(dǎo)體光催化材料的實(shí)際光催化性能相比較檢驗(yàn)其可靠性和有效性。Tafel曲線表明在光照下α-Bi2O3、β-Bi203、Bi2S3、BiOCl和BiP04均屬于n型半導(dǎo)體,但是其導(dǎo)帶位置相對(duì)于在暗場(chǎng)下依據(jù)莫特肖特基(Mott-Schottky)曲線測(cè)得的導(dǎo)帶位置均發(fā)生變化。對(duì)比Bi基氧化物在不同光照條件下的交換光電流密度得知全光譜下的交換光電流密度最大,說明在全光譜下光生電子-空穴的分離能力更高,有最好的光催化活性,與光電流-時(shí)間曲線和交流阻抗譜圖的結(jié)果一致。通過測(cè)試Bi基氧化物的實(shí)際光催化性能,發(fā)現(xiàn)在全光譜下Bi基氧化物的催化性能最好。說明依據(jù)交換光電流密度分析光催化材料的催化性能是可行的。
[Abstract]:The energy band structure is an important parameter to judge whether the semiconductor photocatalytic material has catalytic activity from the thermodynamic level. The accurate measurement of the material under the action of dark field and light field is the premise of the accurate evaluation of the catalytic performance of the material. Compared with thermodynamics, the kinetic activity determines the actual catalytic efficiency of the material. In this paper, the bismuth (Bi)-based oxide was used as the research system to measure the energy band structure and determine the kinetic parameters of photocatalysis. The UV-VisDRS,XRD,SEM,TEM and XPS of bismuth-based oxide were measured in this paper. The band gap, crystal structure, surface morphology and surface composition of the material were obtained. Based on the photochemical testing technique and the above-mentioned physical and chemical data and results of the materials, a method for measuring the flat band potential and the properties of the materials n, p with the Tafel (tafel) curve as the core under the action of the light field is proposed. The evaluation method of photocatalytic kinetic activity based on exchange photocurrent density is proposed, which is compared with the actual photocatalytic performance of semiconductor photocatalyst. The Tafel curve shows that 偽-Bi2O3, 尾-Bi203,Bi2S3, under illumination is reliable and effective. Both BiOCl and BiP04 belong to n-type semiconductors, but their conduction band positions change relative to those measured according to Mott-Schottky curves in dark field. Compared with the exchange photocurrent density of Bi-based oxides under different light conditions, the exchange photocurrent density is the highest in the whole spectrum, indicating that the photogenerated electron-hole separation ability is higher in the whole spectrum and has the best photocatalytic activity. The results are consistent with the photocurrent-time curves and AC impedance spectra. By testing the actual photocatalytic properties of Bi-based oxides, it is found that the Bi-based oxides have the best catalytic performance in the whole spectrum. It shows that it is feasible to analyze the catalytic performance of photocatalytic materials based on the exchange photocurrent density.
【學(xué)位授予單位】：西南石油大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O643.36

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