硅晶體定晶向電火花線切割加工損傷層檢測(cè)研究
發(fā)布時(shí)間：2019-02-24 19:19
【摘要】：在今天這個(gè)科學(xué)技術(shù)飛速發(fā)展的時(shí)代,具有特定晶向的單晶硅材料,其自身特殊的理化性能極大的滿足了國(guó)防軍事、精密儀器、光學(xué)儀表制造等領(lǐng)域的需求。在這些領(lǐng)域的生產(chǎn)加工過程中,作為核心材料的定晶向單晶硅需具有平整光潔的表面和較高的表面質(zhì)量、無(wú)任何損傷、晶向精度符合預(yù)定要求。但是目前最常用的加工定晶向單晶硅片的方式是采用電火花線切割,該種方法會(huì)在加工表面造成電蝕坑、裂紋、深孔等加工損傷,故加工表面會(huì)存在損傷層(變質(zhì)層)。而定晶向硅材料的后期加工,首先需對(duì)其表面的損傷層進(jìn)行去除。本文對(duì)電火花定晶向線切割后的單晶硅的損傷層進(jìn)行了研究,包括定晶向硅片損傷層的厚度和相關(guān)檢測(cè)技術(shù),加工過程中不同的蝕除方式及它們對(duì)硅晶體造成的損傷、成因、結(jié)構(gòu)特征及減小損傷深度的措施,明確了不同蝕除方式下加工損傷層的劃分。并將損傷層檢測(cè)成果應(yīng)用到了定晶向單晶硅損傷層的去除研究中,搭建了定晶向單晶硅損傷層去除平臺(tái),采用噴射電解法對(duì)單晶硅的加工損傷進(jìn)行去除研究,進(jìn)行了去除過程中試驗(yàn)參數(shù)的選擇與優(yōu)化,完成的主要工作如下:(1)提出了基于X射線回?cái)[曲線法的定晶向單晶硅變質(zhì)層厚度檢測(cè)技術(shù),并通過試驗(yàn)證明了其可行性。組建了定晶向單晶硅變質(zhì)層檢測(cè)平臺(tái),研究了切割過程中脈寬對(duì)加工出的單晶硅其表面變質(zhì)層厚度的影響,得出脈寬越大變質(zhì)層厚度就越厚。發(fā)現(xiàn)了相同加工參數(shù)切割出的不同晶向硅片的變質(zhì)層厚度不同,且變質(zhì)層厚度隨著相鄰晶面間鍵密度的增大而減小。(2)采用了X射線回?cái)[曲線法與顯微觀測(cè)相結(jié)合的方法,對(duì)單晶硅電火花線切割加工過程中不同的蝕除方式進(jìn)行了研究,并提出了減小加工損傷深度的措施。(3)研究了電火花定晶向線切割加工過程中不同的蝕除方式對(duì)硅晶體造成的損傷、成因、結(jié)構(gòu)特征,明確了所造成損傷的類型、微觀形貌結(jié)構(gòu)特征,并對(duì)正常蝕除(以熔化和氣化的放電蝕除形式為主)與復(fù)合蝕除(在正常蝕除的基礎(chǔ)上還發(fā)生了熱剝落蝕除)兩種情況下的加工損傷層進(jìn)行劃分。(4)將損傷層檢測(cè)成果應(yīng)用到了定晶向單晶硅損傷層的去除研究中。搭建了定晶向單晶硅損傷層去除平臺(tái),采用噴射電解法對(duì)單晶硅的加工損傷進(jìn)行去除研究,完成了去除過程中基本試驗(yàn)參數(shù)的選擇及優(yōu)化。在保證損傷層完全去除的前提下使硅基體材料損耗減小,并使損傷層去除后的單晶硅其加工表面質(zhì)量得到提升。
[Abstract]:In the era of rapid development of science and technology, the monocrystalline silicon material with specific crystal orientation, its own special physical and chemical properties greatly meet the national defense military, precision instruments, optical instrument manufacturing and other fields. In the process of production and processing in these fields, the crystal oriented monocrystalline silicon, which is the core material, must have a smooth and clean surface and high surface quality without any damage, and the orientation accuracy meets the predetermined requirements. However, the most commonly used way to process single crystal wafers is electrical discharge wire cutting (WEDM), which will cause electrical etching pits, cracks, deep holes and so on, so there will be damage layer (metamorphic layer) on the machined surface. However, the surface damage layer should be removed in the later processing of crystalline silicon. In this paper, the damage layer of monocrystalline silicon after EDM has been studied, including the thickness of the damage layer and the related detection technology, the different ways of etching during the process, the damage caused by them to silicon crystal, and the cause of formation. The structural characteristics and the measures to reduce the depth of damage are discussed, and the division of damage layers under different erosion modes is clarified. The results of damage layer detection are applied to the study of the damage layer removal of the single crystal silicon in the fixed crystal direction, and the removal platform of the damage layer is set up, and the machining damage of the single crystal silicon is studied by jet electrolysis. The main work is as follows: (1) based on the method of X-ray reverberation curve, the thickness detection technique of fixed crystal silicon metamorphic layer is put forward, and its feasibility is proved by experiment. In this paper, a detecting platform for the monocrystalline silicon metamorphic layer with fixed crystal orientation is set up, and the influence of pulse width on the thickness of the modified layer on the surface of the machined monocrystalline silicon is studied. It is concluded that the larger the pulse width is, the thicker the metamorphic layer is. It is found that the thickness of the metamorphic layer of the different crystal orientation silicon wafers cut with the same processing parameters is different, and the thickness of the metamorphic layer decreases with the increase of the bond density between adjacent crystal planes. (2) the method of combining X-ray backswing curve method with microscopic observation is used. In this paper, the different etching methods in the process of single crystal silicon wire discharge cutting (WEDM) are studied. The measures to reduce the depth of damage are put forward. (3) the damage, cause of formation, structural characteristics of silicon crystals caused by different etching methods in the process of EDM are studied, and the types of damage caused by EDM are determined. Microscopic morphology and structure, The process damage layers under the two conditions of normal erosion (mainly in the form of melting and gasification) and composite etching (thermal denudation on the basis of normal erosion) are divided. (4) damage is divided into two kinds of conditions. (4) damage is divided into two kinds of processes. (4) damage is divided into two types: (4) damage is caused by thermal denudation. The results of layer detection have been applied to the study of the removal of the damage layer of single crystal silicon. The removal platform of the damage layer of single crystal silicon with fixed crystal orientation was set up. The machining damage removal of single crystal silicon was studied by jet electrolysis, and the selection and optimization of the basic test parameters in the process of removing the damage layer were completed. On the premise of completely removing the damage layer, the loss of silicon substrate is reduced, and the surface quality of monocrystalline silicon after the removal of the damage layer is improved.
【學(xué)位授予單位】：南京航空航天大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O786
本文編號(hào)：2429848
[Abstract]:In the era of rapid development of science and technology, the monocrystalline silicon material with specific crystal orientation, its own special physical and chemical properties greatly meet the national defense military, precision instruments, optical instrument manufacturing and other fields. In the process of production and processing in these fields, the crystal oriented monocrystalline silicon, which is the core material, must have a smooth and clean surface and high surface quality without any damage, and the orientation accuracy meets the predetermined requirements. However, the most commonly used way to process single crystal wafers is electrical discharge wire cutting (WEDM), which will cause electrical etching pits, cracks, deep holes and so on, so there will be damage layer (metamorphic layer) on the machined surface. However, the surface damage layer should be removed in the later processing of crystalline silicon. In this paper, the damage layer of monocrystalline silicon after EDM has been studied, including the thickness of the damage layer and the related detection technology, the different ways of etching during the process, the damage caused by them to silicon crystal, and the cause of formation. The structural characteristics and the measures to reduce the depth of damage are discussed, and the division of damage layers under different erosion modes is clarified. The results of damage layer detection are applied to the study of the damage layer removal of the single crystal silicon in the fixed crystal direction, and the removal platform of the damage layer is set up, and the machining damage of the single crystal silicon is studied by jet electrolysis. The main work is as follows: (1) based on the method of X-ray reverberation curve, the thickness detection technique of fixed crystal silicon metamorphic layer is put forward, and its feasibility is proved by experiment. In this paper, a detecting platform for the monocrystalline silicon metamorphic layer with fixed crystal orientation is set up, and the influence of pulse width on the thickness of the modified layer on the surface of the machined monocrystalline silicon is studied. It is concluded that the larger the pulse width is, the thicker the metamorphic layer is. It is found that the thickness of the metamorphic layer of the different crystal orientation silicon wafers cut with the same processing parameters is different, and the thickness of the metamorphic layer decreases with the increase of the bond density between adjacent crystal planes. (2) the method of combining X-ray backswing curve method with microscopic observation is used. In this paper, the different etching methods in the process of single crystal silicon wire discharge cutting (WEDM) are studied. The measures to reduce the depth of damage are put forward. (3) the damage, cause of formation, structural characteristics of silicon crystals caused by different etching methods in the process of EDM are studied, and the types of damage caused by EDM are determined. Microscopic morphology and structure, The process damage layers under the two conditions of normal erosion (mainly in the form of melting and gasification) and composite etching (thermal denudation on the basis of normal erosion) are divided. (4) damage is divided into two kinds of conditions. (4) damage is divided into two kinds of processes. (4) damage is divided into two types: (4) damage is caused by thermal denudation. The results of layer detection have been applied to the study of the removal of the damage layer of single crystal silicon. The removal platform of the damage layer of single crystal silicon with fixed crystal orientation was set up. The machining damage removal of single crystal silicon was studied by jet electrolysis, and the selection and optimization of the basic test parameters in the process of removing the damage layer were completed. On the premise of completely removing the damage layer, the loss of silicon substrate is reduced, and the surface quality of monocrystalline silicon after the removal of the damage layer is improved.
【學(xué)位授予單位】：南京航空航天大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O786
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