【摘要】：藍(lán)寶石單晶具有優(yōu)良的光學(xué)、力學(xué)、化學(xué)和電性能,其硬度高、強(qiáng)度高、耐高溫、光透性好的特點(diǎn),使其在光電子、通訊、國(guó)防等領(lǐng)域有著越來(lái)越廣泛的應(yīng)用。正因?yàn)樗{(lán)寶石具有穩(wěn)定的化學(xué)性能和物理力學(xué)性能,這就大大增加了藍(lán)寶石材料的加工難度。隨著光學(xué)和微電子學(xué)及其相關(guān)技術(shù)的發(fā)展,不但要求高的加工效率,而且需要高的表面精度和低的表面及亞表面損傷,所以藍(lán)寶石晶片的加工技術(shù)面臨巨大挑戰(zhàn)。作為典型的硬脆材料,藍(lán)寶石的加工工藝還不成熟。由于藍(lán)寶石在航空航天、深空探索等軍事領(lǐng)域有著特殊的用途,因此,單晶藍(lán)寶石的加工技術(shù)在西方極其保密。為實(shí)現(xiàn)單晶藍(lán)寶石高效、高精度、高質(zhì)量的平坦化加工,研磨拋光技術(shù)應(yīng)運(yùn)而生。研磨主要是通過(guò)磨粒的微切削去除晶片表面的微凸起部分,保證晶片的平面度;拋光主要是為了降低晶片的表面粗糙度,使加工表面鏡面化,并且降低晶片表面與亞表面損傷。由于研磨拋光是一個(gè)系統(tǒng)工程,它需要一個(gè)高穩(wěn)定性的工藝條件,其材料去除機(jī)理、材料非均勻性形成機(jī)制還不夠完善,通過(guò)試驗(yàn)方法研究研磨拋光過(guò)程,往往受到試驗(yàn)條件的影響和試驗(yàn)成本限制,因而將試驗(yàn)與仿真方法相結(jié)合成為研究研磨拋光機(jī)理及優(yōu)化加工工藝的一種有效手段。本文首先建立了工件與拋光盤之間的相對(duì)運(yùn)動(dòng)模型,運(yùn)用“運(yùn)動(dòng)學(xué)原理”及“坐標(biāo)變換”得出磨粒運(yùn)動(dòng)軌跡方程,推導(dǎo)了運(yùn)動(dòng)軌跡長(zhǎng)度公式和軌跡曲線曲率公式。利用MATLAB軟件分析模擬研磨拋光過(guò)程中轉(zhuǎn)速比、偏心距、磨粒向徑、初始角度對(duì)磨粒運(yùn)動(dòng)軌跡形態(tài)及軌跡曲線曲率的影響。在此基礎(chǔ)上,本文通過(guò)“變異系數(shù)”來(lái)分析軌跡長(zhǎng)度非均勻性、速度非均勻性、壓力分布非均勻性,并利用“微積分”方法得出工件均勻磨損方程。為滿足工件均勻磨損的條件,分別分析了拋光盤轉(zhuǎn)速、工件轉(zhuǎn)速、偏心距、磨粒向徑對(duì)磨損因子的影響。為探索研磨拋光過(guò)程中工件接觸處的應(yīng)力變化情況,本文將利用商用有限元軟件Abaqus建立工件、拋光盤、拋光墊、保持環(huán)之間相互接觸的三維模型,仿真分析了下壓力、拋光墊厚度、拋光墊彈性模量、拋光墊泊松比、工件與拋光墊之間摩擦系數(shù)對(duì)接觸應(yīng)力分布及應(yīng)力分布非均勻性的影響規(guī)律。在上述理論與仿真模擬的基礎(chǔ)上,本文將對(duì)藍(lán)寶石襯底片進(jìn)行拋光實(shí)驗(yàn)研究。通過(guò)單因素實(shí)驗(yàn)法研究不同壓力、上下盤轉(zhuǎn)速、拋光墊等工藝參數(shù)對(duì)藍(lán)寶石襯底片化學(xué)機(jī)械拋光材料去除速率和表面粗糙度的影響。通過(guò)理論、仿真、實(shí)驗(yàn)來(lái)改善藍(lán)寶石研磨拋光加工工藝,這為理解研磨拋光加工機(jī)理與研磨拋光機(jī)的設(shè)計(jì)提供理論指導(dǎo)。
[Abstract]:Sapphire single crystals have excellent optical, mechanical, chemical and electrical properties, high hardness, high strength, high temperature resistance and good light permeability, which make them more and more widely used in the fields of optoelectronics, communication, national defense and so on. Because sapphire has stable chemical and physical mechanical properties, this greatly increases the processing difficulty of sapphire material. With the development of optics, microelectronics and related technologies, high processing efficiency, high surface precision and low surface and sub-surface damage are required, so the fabrication technology of sapphire wafers is facing great challenges. As a typical hard and brittle material, the processing technology of sapphire is not mature. Because sapphire has special applications in aerospace, deep space exploration and other military fields, the processing technology of single crystal sapphire is extremely secret in the west. In order to achieve high efficiency, high precision and high quality flat machining of single crystal sapphire, grinding and polishing technology emerged as the times require. Grinding is mainly to remove the micro-protruding part of the wafer surface by micro-cutting of the abrasive particles to ensure the planeness of the wafer, and the polishing is mainly to reduce the surface roughness of the wafer, make the machined surface mirrorized, and reduce the surface and sub-surface damage of the wafer. As grinding and polishing is a systematic project, it needs a high stability process condition, its material removal mechanism and material non-uniformity formation mechanism are not perfect, the grinding and polishing process is studied by means of experimental method. Because of the influence of test conditions and the limitation of test cost, the combination of test and simulation is an effective means to study the mechanism of grinding and polishing and to optimize the processing technology. In this paper, the relative motion model between the workpiece and the polishing disc is established, and the kinematics principle and coordinate transformation are used to obtain the motion trajectory equation of the abrasive particle, and the formula of trajectory length and curve curvature are derived. The effects of rotational speed ratio, eccentricity, particle diameter and initial angle on the morphology and curve curvature of abrasive particles during grinding and polishing were analyzed by MATLAB software. On this basis, the variation coefficient is used to analyze the inhomogeneity of track length, velocity and pressure distribution, and the uniform wear equation of workpiece is obtained by "calculus" method. In order to satisfy the condition of uniform wear of workpiece, the effects of rotating speed, rotation speed, eccentricity and diameter of abrasive particle on wear factor were analyzed respectively. In order to explore the stress change of workpiece contact during grinding and polishing, a 3D model of workpiece, polishing pad, polishing pad and contact between workpiece, polishing pad and retaining ring is established by using commercial finite element software Abaqus, and the downward pressure is simulated and analyzed. The influence of thickness of polishing pad, elastic modulus of polishing pad, Poisson's ratio of polishing pad and friction coefficient between workpiece and polishing pad on contact stress distribution and non-uniformity of stress distribution. On the basis of the above theory and simulation, the polishing experiment of sapphire substrate will be carried out in this paper. The effects of different pressure, rotating speed of upper and lower disk and polishing pad on the removal rate and surface roughness of chemical-mechanical polishing material on sapphire substrate were studied by single factor experiment. The theory, simulation and experiment are used to improve the grinding and polishing process of sapphire, which provides theoretical guidance for understanding the mechanism of grinding and polishing and the design of grinding polishing machine.
【學(xué)位授予單位】：昆明理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：O786

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