本文選題：KDP晶體　切入點(diǎn)：數(shù)值模擬　出處：《重慶大學(xué)》2016年碩士論文

【摘要】：本文首先針對(duì)KDP晶體傳統(tǒng)同心旋轉(zhuǎn)的方式,對(duì)采用降溫法時(shí)不同旋轉(zhuǎn)半徑下KDP晶體的生長(zhǎng)過(guò)程進(jìn)行數(shù)值模擬,著重分析旋轉(zhuǎn)半徑對(duì)晶體表面過(guò)飽和度大小及分布的影響,并研究其作用機(jī)理。同時(shí)通過(guò)改變晶體的擺放方式,進(jìn)一步尋找提高晶體表面過(guò)飽和度和改善晶體表面均勻性的方法。其次,考慮到實(shí)際工業(yè)生產(chǎn)中以循環(huán)流動(dòng)法生長(zhǎng)晶體為主,為了便于對(duì)其生產(chǎn)過(guò)程進(jìn)行理論指導(dǎo),本文在不同旋轉(zhuǎn)半徑對(duì)晶體生長(zhǎng)影響研究的基礎(chǔ)上,對(duì)利用循環(huán)流動(dòng)法生長(zhǎng)晶體時(shí),不同進(jìn)口條件下KDP晶體的生長(zhǎng)過(guò)程進(jìn)行數(shù)值模擬,探尋不同進(jìn)口條件對(duì)晶體生長(zhǎng)過(guò)程中表面過(guò)飽和度大小及其分布影響的規(guī)律性,從而為更好的工業(yè)化生產(chǎn)KDP晶體奠定理論基礎(chǔ)。本課題的主要研究?jī)?nèi)容和結(jié)論如下:(1)針對(duì)傳統(tǒng)同心旋轉(zhuǎn)法生長(zhǎng)晶體的弊端,對(duì)采用降溫法時(shí)不同旋轉(zhuǎn)半徑下KDP晶體的生長(zhǎng)過(guò)程進(jìn)行數(shù)值模擬。結(jié)果表明:隨著旋轉(zhuǎn)半徑從0cm逐漸增加到3cm,晶體柱面和錐面時(shí)均過(guò)飽和度均逐漸增大,柱面過(guò)飽和度均方差逐漸減小,錐面過(guò)飽和度均方差先增大后減小。通過(guò)分析發(fā)現(xiàn)隨著旋轉(zhuǎn)半徑的提高,溶液強(qiáng)制對(duì)流逐漸增強(qiáng),溶質(zhì)邊界層逐漸變薄。說(shuō)明增大晶體的旋轉(zhuǎn)半徑既可以提高晶體的生長(zhǎng)速率,同時(shí)還可以改善晶體表面的均勻性。另外,在此基礎(chǔ)上對(duì)旋轉(zhuǎn)半徑為3cm時(shí),晶體表面過(guò)飽和度隨時(shí)間的變化情況進(jìn)行了分析。(2)在旋轉(zhuǎn)半徑一定的基礎(chǔ)上,對(duì)采用降溫法時(shí)不同晶體擺放方式下KDP晶體的生長(zhǎng)過(guò)程進(jìn)行數(shù)值模擬。結(jié)果表明:在柱面迎流、棱邊迎流和錐面迎流三種不同的擺放方式下,當(dāng)晶體采用柱面迎流時(shí)晶體時(shí)均表面過(guò)飽和度最大,棱邊迎流時(shí)次之,采用錐面迎流時(shí)晶體時(shí)均表面過(guò)飽和度最小,且當(dāng)晶體采用錐面迎流時(shí)晶體柱面和錐面均方差最大,采用柱面迎流時(shí)次之,采用棱邊迎流時(shí)晶體柱面和錐面均方差最小。因此,雖然晶體采用棱邊迎流的擺放方式時(shí),時(shí)均表面過(guò)飽和度與柱面迎流相比略有下降,但其平均均方差是三種擺放方式中最小的,有利于減少包裹體的產(chǎn)生。(3)結(jié)合實(shí)際工業(yè)生產(chǎn),將循環(huán)流動(dòng)法與有旋轉(zhuǎn)半徑的轉(zhuǎn)晶法相結(jié)合,對(duì)不同入口條件下KDP晶體生長(zhǎng)過(guò)程中的溶液流動(dòng)和物質(zhì)輸運(yùn)過(guò)程進(jìn)行了數(shù)值模擬研究,分別討論了溶液入口速度、溶液進(jìn)口管位置和溶液入射角度對(duì)晶體生長(zhǎng)過(guò)程的影響。研究結(jié)果表明:首先,隨著溶液入口速度的增大,晶體柱面時(shí)均過(guò)飽和度先減小后增大,晶體錐面時(shí)均過(guò)飽和度先略微減小后逐漸增大,柱面和錐面均方差均先增大后減小。其次,晶體表面過(guò)飽和度和均方差隨著溶液進(jìn)口管在生長(zhǎng)槽上的位置不同而不同。當(dāng)溶液進(jìn)口管軸線與晶體中心在同一高度時(shí),晶體表面過(guò)飽和度較大且均方差較小。最后,當(dāng)溶液進(jìn)口管軸線與晶體中心在同一高度時(shí),隨著溶液入射角相對(duì)晶體位置的不斷增大,晶體柱面過(guò)飽和度先增大后減小,均方差先減小后增大,晶體錐面過(guò)飽和度先增大后減小繼而又增大,錐面均方差則與錐面過(guò)飽和度呈現(xiàn)相反的規(guī)律。當(dāng)入口管軸線與晶體旋轉(zhuǎn)半徑較小的錐尖運(yùn)動(dòng)軌跡相切時(shí),晶體表面過(guò)飽和度最大,均方差最小。
[Abstract]:In this paper, the traditional KDP crystal concentric rotation mode, numerical simulation of the KDP crystal growth process under different rotation radius of cooling method, emphatically analyzes the influence of rotary radius on the surface supersaturation and size distribution, and study its mechanism. At the same time by changing the crystal display mode, further to improve the crystal surface. Method of saturation and improve the uniformity of the crystal surface. Secondly, considering the actual industrial production by circulating method of crystal growth, in order to facilitate the production process theory, this paper based on the study on the influence of different radius of crystal growth, the crystal growth by circulating method, numerical simulation of growth the process of KDP crystal under different inlet conditions, explore different inlet conditions on the crystal growth process of surface supersaturation and size distribution. Regular rings, which provides a theoretical basis for better industrial production of KDP crystal. The main research contents and conclusions are as follows: (1) aiming at the disadvantages of traditional concentric rotating crystal, the cooling method of numerical simulation of KDP crystal growth under different rotation radius of Guo Chengjin. The results show that with the radius of rotation increased from 0cm to 3cm, the crystal cylinder and cone are supersaturation increased, cylindrical supersaturation variance decreases, the cone supersaturation variance increases first and then decreases. The analysis found that as the rotation radius of forced solution convection increases, solute boundary layer becomes thinner. The rotation radius increases the crystal can improve the crystal growth rate, but also can improve the uniformity of the crystal surface. In addition, on the basis of the rotation radius is 3cm, the crystal surface supersaturation Changes with time are analyzed. (2) based on the rotation radius, the cooling method of different crystal growth process of KDP crystal display mode was simulated. The results show that the flow in the cylinder, edge flow and cone attack three different display mode, when the crystal the cylindrical upstream crystal are surface supersaturation, edge flow when the flow when using cone crystal surface supersaturation were minimal, and when the crystal with cone flow when the crystal cylinder and cone are the maximum variance, using cylindrical flow time, the flow at the edge crystal cylinder and cone are the smallest variance. Therefore, although the crystal edge flow display, when the surface supersaturation and cylindrical flow phase decreased slightly, but the average variance is the smallest of the three kinds of layout, reduces the package The body is produced. (3) according to the actual production, the circulating method combined with the rotation radius of the rotating crystal method, the solution of KDP crystal with different entrance conditions during the growth of flow and mass transport process were studied by numerical simulation, the solution of entrance velocity are discussed, the position and effect of solution inlet pipe the solution of incident angle on the process of crystal growth. The results show that: firstly, with the increase of solution entrance velocity, the crystal when the supersaturation decreases first and then increases, when the supersaturation of crystal cone first slightly increased gradually after, the cylinder and cone variance were first increased and then decreased. Secondly, the surface supersaturation and the mean variance with different solution inlet pipe in slot position and different growth. When the solution inlet tube axis and the center of the crystal at the same height, the surface supersaturation is larger and smaller mean square deviation. Later, when the solution inlet tube axis and the center of the crystal at the same height, angle of incidence relative to the crystal position as the solution increases, the crystal supersaturation increases first and then decreases, the variance decreases first and then increases, the crystal cone supersaturation increases first and then decreases and then increases, and the variance of cone cone supersaturation show instead of the law. When the tip trajectory tangent entrance pipe axis and smaller crystal rotation radius, the surface supersaturation maximum, minimum mean square error.

【學(xué)位授予單位】：重慶大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類(lèi)號(hào)】：O78

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