藍(lán)寶石不同晶面磨削特性比較
發(fā)布時(shí)間:2018-02-26 19:44
本文關(guān)鍵詞: 藍(lán)寶石 晶面 磨削力 磨削特性 表面形貌 出處:《光學(xué)精密工程》2017年05期 論文類(lèi)型:期刊論文
【摘要】:比較了藍(lán)寶石不同晶面磨削特性的差異。對(duì)藍(lán)寶石晶體的A面、C面、M面及R面開(kāi)展精密磨削試驗(yàn),并從磨削力、磨削力比、比磨削能及表面形貌等角度比較了藍(lán)寶石4個(gè)晶面磨削特性的差異。采用金剛石砂輪在精密平面磨床上對(duì)藍(lán)寶石4個(gè)晶面進(jìn)行磨削,采用測(cè)力儀測(cè)量磨削過(guò)程中的磨削力,并根據(jù)所測(cè)得的磨削力計(jì)算磨削力比和比磨削能。最后,采用掃描電子顯微鏡觀測(cè)工件磨削表面形貌。試驗(yàn)結(jié)果顯示:藍(lán)寶石的4個(gè)晶面中C面的磨削力最大,其次是M面和A面,R面的磨削力最小;比磨削能亦為C面最大,其次是M面和A面,R面的比磨削能最小;磨削力比則是M面最大,其次是A面和C面,R面的磨削力比最小。在相同磨削條件下,藍(lán)寶石不同晶面磨削材料的去除方式有所不同,A面、M面和R面主要以脆性斷裂、破碎和解離方式去除為主,且破碎坑較大,表面相對(duì)較為粗糙;而C面則存在部分脆性斷裂和部分粉末化去除,破碎坑較小,表面相對(duì)平整。因此,藍(lán)寶石不同晶面的磨削特性差異明顯,其磨削力、磨削力比、比磨削能及材料去除方式均存在明顯的不同。
[Abstract]:The grinding characteristics of different crystal surfaces of sapphire are compared. The precision grinding tests are carried out on the C / M and R surfaces of sapphire crystals, and the grinding force ratio, grinding force ratio, grinding force ratio, grinding force ratio, grinding force ratio, grinding force ratio, grinding force ratio, grinding force ratio, The grinding characteristics of four crystal surfaces of sapphire are compared in terms of specific grinding energy and surface morphology. Four crystal surfaces of sapphire are ground by diamond wheel on precision plane grinding machine, and grinding force is measured by dynamometer. The grinding force ratio and specific grinding energy are calculated according to the measured grinding force. Finally, the grinding surface morphology of the workpiece is observed by scanning electron microscope. The experimental results show that the grinding force of C plane is the largest in the four crystal planes of sapphire. Secondly, the grinding force of M plane and A plane R plane is the smallest, the specific grinding energy is also the largest in C plane, the second is the specific grinding energy of M plane and A plane R plane, and the grinding force ratio is M plane. Secondly, the grinding force ratio of A plane and C plane / R plane is the smallest. Under the same grinding conditions, the removal methods of different crystal surfaces of sapphire grinding materials are different, such as brittle fracture, breakage and dissociation. The crashing pit is larger and the surface is relatively rough, while the C plane has partial brittle fracture and partial powder removal, the crater is small and the surface is relatively flat. Therefore, the grinding characteristics of different crystal planes of sapphire are different, and the grinding force is obvious. There are obvious differences in grinding force ratio, specific grinding energy and material removal methods.
【作者單位】: 華僑大學(xué)制造工程研究院;
【基金】:國(guó)家自然科學(xué)基金-海峽聯(lián)合基金重點(diǎn)項(xiàng)目(No.U1305241);國(guó)家自然科學(xué)基金-面上項(xiàng)目(No.51675192,No.51575197)
【分類(lèi)號(hào)】:O786
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本文編號(hào):1539443
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