本文關鍵詞：銀納米線的側(cè)向生長及其抑制研究　出處：《光譜學與光譜分析》2016年06期 　論文類型：期刊論文

  更多相關文章： 多元醇法 銀納米線 側(cè)向生長 抑制

【摘要】：采用多元醇法,在不同溫度,不同PVP滴加速度和加入量的條件下合成了銀納米線。利用XRD,UV-Vis,SEM和TEM對銀納米線及其側(cè)向生長過程進行了觀察和分析。UV-Vis表明銀納米線在縱向生長的同時發(fā)生了側(cè)向生長。而且表示銀納米線側(cè)向生長的紫外吸收光譜峰在銀納米線合成后期發(fā)生了明顯的紅移,由384nm紅移至約388nm處,表明銀納米線合成后期直徑迅速增長,銀納米線發(fā)生了快速的側(cè)向生長。SEM研究表明銀納米線直徑在反應前期(15~23min)只增加了20nm,而在反應后期(23~30min)銀納米線直徑增加了近150nm,SEM觀察結(jié)果與UV-Vis分析結(jié)論一致。同時還發(fā)現(xiàn)銀納米線直徑不僅與晶種大小有關而且與銀線外覆蓋的銀層厚度有關,銀源以吸附在銀線側(cè)面的小銀顆粒為附著點沿其側(cè)面多點沉積導致了銀納米線的側(cè)向生長;降低反應液溫度(165℃降至155℃),降低PVP滴加速度(67mL·h~(-1)減小到49mL·h~(-1))以及減少銀納米線合成后期PVP加入量可抑制銀納米線的側(cè)向生長,顯著提高銀納米線長徑比,銀納米線直徑由200nm減小至100nm左右,長度仍保持在100μm以上。
[Abstract]:Silver nanowires were synthesized by polyol method under the conditions of different temperature, different PVP droplet acceleration and addition amount. SEM and TEM have observed and analyzed the silver nanowires and their lateral growth process. UV-Vis shows that the silver nanowires grow at the same time as the longitudinal growth, and indicate that the silver nanowires grow laterally. The UV absorption spectrum peak of silver nanowires showed a red shift in the later stage of synthesis of silver nanowires. The red shift from 384nm to 388nm indicates that the diameter of silver nanowires grows rapidly in the later stage of synthesis. The rapid lateral growth of silver nanowires. SEM showed that the diameter of silver nanowires increased only by 20 nm at 1523 min before the reaction. The diameter of silver nanowires increased by 150 nm at the end of the reaction. The results of SEM are consistent with the results of UV-Vis analysis. It is also found that the diameter of silver nanowires is related not only to the seed size but also to the thickness of silver layer covered by silver wires. Silver source with small silver particles adsorbed on the side of silver wire as the attachment point along its side multi-point deposition led to the lateral growth of silver nanowires. The temperature of the reaction solution was lowered from 165 鈩，

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