【摘要】：采用電子光學(xué)軟件設(shè)計模擬了一種長焦距多聚焦級的電子槍結(jié)構(gòu).利用電子透鏡原理分析多聚焦極電子槍的電子束斑產(chǎn)生,依據(jù)不同柵控電壓,分析零場模式、拒斥場模式和肖特基場模式3種陰極電子發(fā)射方式下電子聚焦情況.模擬結(jié)果表明:拒斥場模式和肖特基場模式對電子束流密度分別有減弱和增強的作用;當(dāng)聚焦極電壓比U1∶U2∶U3∶U4∶U5=5∶8∶15∶70∶100時,能量為30keV的電子束焦斑最小,在10m處焦斑大小為160mm.
[Abstract]:An electron gun structure with long focal length and multi-focus level was designed and simulated by using electronic optical software. The generation of electron beam spot of multi-focus electron gun is analyzed by using the principle of electron lens. According to the different gate control voltage, the electron focusing is analyzed under three cathode electron emission modes: zero field mode, rejection field mode and Schottky field mode. The simulation results show that the repellent field model and the Schottky field model have the effect of weakening and enhancing the electron beam density respectively. When the voltage ratio of the focusing pole is U1:U2:U3:U4:U5=5:8:15:70:100, the electron beam focal spot with the energy of 30keV is the smallest, and the focal spot size is 160 mm at 10 m.
【作者單位】： 中國科學(xué)院西安光學(xué)精密機械研究所瞬態(tài)光學(xué)與光子技術(shù)國家重點實驗室;中國科學(xué)院大學(xué);
【基金】：國家自然科學(xué)基金(No.61471357) 中國科學(xué)院“西部之光”和地理信息工程國家重點實驗室開放研究基金(No.SKLGIE2014-M-2-1)資助~~
【分類號】：V416
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本文編號：2415809