【摘要】：能源是國(guó)家發(fā)展的重要基石。隨著社會(huì)的需求,可再生清潔能源成為發(fā)展的趨勢(shì)。太陽(yáng)能就是其中之一,它不僅儲(chǔ)量巨大,同時(shí)又不需要消耗地球上的其他資源,因此研究和更好利用太陽(yáng)能是今后全球的重要課題。太陽(yáng)電池是一類(lèi)能夠把太陽(yáng)能直接轉(zhuǎn)換成電能的裝置。依托它為核心,形成了對(duì)應(yīng)的光伏系統(tǒng)。雖然當(dāng)前已經(jīng)產(chǎn)業(yè)化,但是使用的技術(shù)過(guò)度依賴高真空條件,這大大提高了生產(chǎn)成本,同時(shí)目前采用的硅基等太陽(yáng)電池,其生產(chǎn)過(guò)程中消耗大量的能源。為了解決這些問(wèn)題,本文采用噴霧熱解法在大氣環(huán)境下,對(duì)CuInS2薄膜太陽(yáng)電池的各層材料的制備展開(kāi)了研究,具體結(jié)果如下：首先,介紹了超聲噴霧熱解法在玻璃襯底上制備CuInS2薄膜的過(guò)程,通過(guò)不同表征測(cè)試手段研究了襯底溫度, Cu/In原子比,不同退火等工藝參數(shù)對(duì)CuInS2薄膜的影響。光學(xué)顯微鏡和XRD測(cè)試揭示了樣品表面的粗糙程度、雜質(zhì)項(xiàng)及主要結(jié)晶成分的晶化程度；透射光譜計(jì)算得到樣品禁帶寬度Eg=1.45 eV,符合理想的太陽(yáng)電池光電材料的禁帶寬度；冷熱探針?lè)y(cè)試顯示樣品為p型導(dǎo)電,同時(shí),隨著Cu元素濃度增加,導(dǎo)電類(lèi)型趨于本征,載流子濃度增加且電阻率降低。因此,我們制得的樣品比較適合太陽(yáng)電池吸收層的制備。其次,對(duì)比了Mo與玻璃襯底對(duì)CuInS2薄膜的影響。制備條件相同的情況下,在Mo與玻璃襯底上制備的薄膜結(jié)晶性、粗糙度和厚度等方面趨勢(shì)大體相同,但Mo基底上的薄膜,在結(jié)晶性,均勻性,薄膜平整度和表面形貌等方面均優(yōu)于玻璃基底上的薄膜。此外,不同襯底對(duì)制備出的薄膜晶格參數(shù)也有一定的影響。再次,采用超聲噴霧熱解法制備了窗口層AZO導(dǎo)電薄膜,研究了醇水比、襯底溫度、噴霧時(shí)間、噴霧速度和退火處理等工藝參數(shù)對(duì)AZO薄膜結(jié)構(gòu)和性能的影響。噴霧速度為4ml/min、醇水比為4：1、噴涂時(shí)間為30 min時(shí),得到的薄膜樣品性能最好；當(dāng)基底溫度保持在350℃或者500℃時(shí),樣品均表現(xiàn)出較好的導(dǎo)電性；對(duì)樣品做真空退火處理,能夠明顯提高其電學(xué)和光學(xué)性能。最后,同樣是采用超聲噴霧熱解法制備了緩沖層In2S3薄膜,確定了薄膜制備的最佳襯底溫度。在300到400℃下,制備出了禁帶寬度變化在3.01 eV-3.22eV之間的In2S3薄膜,適合作為CuInS2太陽(yáng)電池緩沖層。
[Abstract]:Energy is an important cornerstone of national development. With the demand of society, renewable clean energy has become the trend of development. Solar energy is one of them. It not only has huge reserves, but also does not need to consume other resources on the earth. Therefore, studying and making better use of solar energy is an important global topic in the future. Solar cells are devices that can convert solar energy directly into electrical energy. Relying on it as the core, formed the corresponding photovoltaic system. Although it has been industrialized at present, the technology used is excessively dependent on high vacuum conditions, which greatly increases the production cost. At the same time, the silicon based solar cells, which are used at present, consume a lot of energy in the process of production. In order to solve these problems, the preparation of various layers of CuInS2 thin film solar cells is studied by spray pyrolysis in the atmosphere. The results are as follows: firstly, The process of preparing CuInS2 thin films on glass substrates by ultrasonic spray pyrolysis was introduced. The effects of substrate temperature, Cu/In atomic ratio and annealing parameters on CuInS2 thin films were studied by different characterization methods. Optical microscope and XRD test revealed the roughness of the sample surface, the degree of crystallization of impurity and main crystalline components, and the band gap of the sample was calculated by transmission spectrum, and the band gap of photovoltaic material of solar cell with Eg=1.45 eV, was obtained. The hot and cold probe method showed that the sample was p type conductive. At the same time, with the increase of Cu element concentration, the conduction type tended to be intrinsic, the carrier concentration increased and the resistivity decreased. Therefore, our sample is more suitable for the preparation of solar cell absorption layer. Secondly, the effects of Mo and glass substrates on CuInS2 films are compared. Under the same preparation conditions, the crystallinity, roughness and thickness of the films prepared on Mo and glass substrates are similar, but the films on Mo substrates have the same crystallinity and uniformity. The smoothness and surface morphology of the films are better than those on glass substrates. In addition, different substrates also have some influence on the lattice parameters of the prepared thin films. Thirdly, the window layer AZO thin films were prepared by ultrasonic spray pyrolysis. The effects of alcohol / water ratio, substrate temperature, spray time, spray rate and annealing on the structure and properties of AZO films were investigated. When the spray rate is 4 ml / min, the ratio of alcohol to water is 4: 1, and the spraying time is 30 min, the film has the best properties, and when the substrate temperature is kept at 350 鈩，

本文編號(hào)：2340053