【摘要】：隨著人類(lèi)社會(huì)的快速進(jìn)步，能源危機(jī)變得更加地嚴(yán)重，太陽(yáng)能是可再生的能源，受到人們的普遍關(guān)注，各國(guó)都在大力研發(fā)太陽(yáng)能電池，CIGS薄膜太陽(yáng)能電池以其優(yōu)異的綜合性能被認(rèn)為是最有前景的第三代太陽(yáng)能電池。為降低其生產(chǎn)成本，單靶濺射技術(shù)被開(kāi)發(fā)出來(lái)，目前，單靶的電阻率太大，只能用于射頻濺射，這很大程度上限制了CIGS電池的工業(yè)化生產(chǎn)。本文就制備導(dǎo)電性良好的單靶進(jìn)行了探索。 本實(shí)驗(yàn)以高純的銅、銦、鎵和硒為原料，用石英管真空密封真空密封，制備出單相的Cu2Se、In2Se3、Ga2Se3和CuIn0.7Ga0.3Se2等化合物粉末。并測(cè)試了這些化合物在室溫時(shí)，25MPa壓強(qiáng)下的電阻率。300℃保溫3小時(shí)可合成單相Cu2Se，電阻率為0.022Ω cm；650℃保溫3小時(shí)可合成單相In2Se3，電阻率為4.2Ω cm；885℃保溫12小時(shí)可合成單相的Ga2Se3，電阻率為1.03*107Ω cm；1000℃保溫3小時(shí)可合成單相的CuIn0.7Ga0.3Se2，電阻率為379.5Ω cm。 實(shí)驗(yàn)用不同溫度制備的CIGS粉末和Cu2Se、In2Se3、Ga2Se3按化學(xué)計(jì)量比配制的混合粉末，運(yùn)用SPS燒結(jié)技術(shù)制備靶材，探討燒結(jié)溫度、保溫時(shí)間、燒結(jié)壓力和燒結(jié)氣氛對(duì)CIGS靶材致密度和電阻率的影響。結(jié)果發(fā)現(xiàn)，燒結(jié)壓力不變時(shí)，升高燒結(jié)溫度和延長(zhǎng)保溫時(shí)間，靶材致密度和電阻率都升高。燒結(jié)溫度和保溫時(shí)間不變時(shí)，壓力增大，靶材致密度升高，電阻率下降；真空氣氛燒結(jié)的靶材性能優(yōu)于氬氣保護(hù)下的靶材。 以650℃真空化合制備的CIGS粉末為原料，運(yùn)用SPS燒結(jié)技術(shù)(溫度為600℃，保溫5分鐘，真空條件下，燒結(jié)壓強(qiáng)為30MPa)得到靶材致密度為97.83%，，電阻率為52.1Ω cm，燒結(jié)溫度為850℃，其他條件不變時(shí)，致密度達(dá)98.97%。以Cu2Se、In2Se3、Ga2Se3按化學(xué)計(jì)量比配制的混合粉末為原料，燒結(jié)壓力為25MPa，溫度為600℃，得到靶材的致密度為96.68%，電阻率為7.1Ω cm。XRD、SEM及EDS分析顯示靶材都以CuIn0.7Ga0.3Se2為主體相。
[Abstract]:With the rapid progress of human society, the energy crisis has become more serious. Solar energy is a renewable energy, which has received widespread attention. CIGS thin film solar cells are the most promising solar cells for their excellent comprehensive performance. In order to reduce the production cost, single target sputtering technology has been developed. At present, the resistivity of single target is too large and can only be used in RF sputtering, which limits the industrial production of CIGS battery to a great extent. In this paper, the preparation of a single target with good conductivity is explored. In this experiment, single phase Cu _ 2SeN _ (2) in _ (2) S _ (2) E _ (3) Ga _ (2) S _ (3) and CuIn0.7Ga0.3Se2 powders were prepared by using high purity copper, indium, gallium and selenium as raw materials and sealed by quartz tube. The resistivity of these compounds was measured at room temperature at 25 MPA for 3 hours. The resistivity was 0.022 惟 cm ~ (-1) and the resistivity was 4.2 惟 路cm ~ (3). The resistivity was 0.022 惟 cm ~ (-1) and 650 鈩

本文編號(hào)：2195115